公开(公告)号：US20200294886A1

公开(公告)日：2020-09-17

申请号：US16355468

申请日：2019-03-15

Applicant: Intel Corporation

Inventor： Amitesh Saha ,  Shushan Gong ,  Shrenik Kothari

IPC: H01L23/42 ,  H01L23/00 ,  H01L21/48

Abstract: A thermal interface material may be formed comprising a polymer material and a self-healing constituent. The thermal interface material may be used in an integrated circuit assembly between at least one integrated and a heat dissipation device, wherein the self-healing constituent changes the physical properties of the thermal interface material in response to thermo-mechanical stresses to prevent failure modes from occurring during the operation of the integrated circuit assembly.

公开(公告)号：US20200286809A1

公开(公告)日：2020-09-10

申请号：US16293163

申请日：2019-03-05

Applicant: Intel Corporation

Inventor： Shushan Gong ,  James C. Matayabas, JR.

IPC: H01L23/373 ,  H01L25/11 ,  H01L23/367 ,  H01L23/538 ,  F28F21/02

Abstract: Multi-die semiconductor device packages include a solder thermal interface material for a processor device, and a carbon-pad thermal interface material for a high-bandwidth memory device. Disparate dice are packaged against a heat sink on the device backsides, and on a semiconductor package substrate on the device active surfaces and metallizations.

公开(公告)号：US11551997B2

公开(公告)日：2023-01-10

申请号：US16355468

申请日：2019-03-15

Applicant: Intel Corporation

Inventor： Amitesh Saha ,  Shushan Gong ,  Shrenik Kothari

IPC: H01L23/42 ,  H01L21/48 ,  H01L23/00

Abstract: A thermal interface material may be formed comprising a polymer material and a self-healing constituent. The thermal interface material may be used in an integrated circuit assembly between at least one integrated and a heat dissipation device, wherein the self-healing constituent changes the physical properties of the thermal interface material in response to thermo-mechanical stresses to prevent failure modes from occurring during the operation of the integrated circuit assembly.

公开(公告)号：US20210143082A1

公开(公告)日：2021-05-13

申请号：US16678024

申请日：2019-11-08

Applicant: Intel Corporation

Inventor： Shushan Gong ,  Iolanda Santana Klein ,  Marely Estefania Tejeda Ferrari

IPC: H01L23/373 ,  H01L23/532

Abstract: A thermal interface material may be formed comprising a plastic crystal matrix, such as succinonitrile, adamantane, glutaronitrile, and mixtures thereof, and a thermally conductive filler material dispersed within the plastic crystal matrix. The thermal interface material may be used in an integrated circuit assembly to facilitate heat transfer between at least one integrated circuit device and a heat dissipation device.

公开(公告)号：US20200227338A1

公开(公告)日：2020-07-16

申请号：US16247869

申请日：2019-01-15

Applicant: INTEL CORPORATION

Inventor： Shushan Gong

IPC: H01L23/373 ,  H01L23/367 ,  H01L21/48 ,  F28F21/02 ,  F28F21/08

Abstract: A multi-layered thermal interface material (TIM) suitable for integrated circuit (IC) die package assemblies. The multi-layered TIM may include at least a substrate material and an adhesion material. The substrate material may have high compressibility (low bulk modulus) and high thermal conductivity, such as a carbon-based material. The adhesion layer may be of a material suitable for sintering to a metallic package component, such as a heat spreader. The adhesion layer, once bonded to the package component, may reduce thermal resistance between an IC die and other portions of the package assembly. The adhesion material may be sintered with a heat spreader, for example. A low temperature bonding process may be employed to limit thermal exposure of an IC die. The adhesion material may comprise nanoparticles of elemental metal or metal alloy, which may be sprayed or printed onto a substrate material.