公开(公告)号：US08853741B2

公开(公告)日：2014-10-07

申请号：US13964696

申请日：2013-08-12

Applicant: Intel Corporation

Inventor： Annalisa Cappellani ,  Kelin J. Kuhn ,  Rafael Rios ,  Titash Rakshit ,  Sivakumar Mudanai

IPC: H01L29/205 ,  H01L29/78 ,  H01L29/66

CPC classification number: H01L29/775 ,  H01L29/0669 ,  H01L29/205 ,  H01L29/66439 ,  H01L29/66795 ,  H01L29/785 ,  H01L2029/7857

Abstract: A junctionless accumulation-mode (JAM) semiconductive device is isolated from a semiconducive substrate by a reverse-bias band below a prominent feature of a JAM semiconductive body. Processes of making the JAM device include implantation and epitaxy.

Abstract translation: 通过在JAM半导体主体的突出特征之下的反向偏压带将无连接累积模式（JAM）半导体器件从半导体衬底隔离。 制造JAM器件的过程包括植入和外延。

公开(公告)号：US20150021553A1

公开(公告)日：2015-01-22

申请号：US14507044

申请日：2014-10-06

Applicant: Intel Corporation

Inventor： ANNALISA CAPPELLANI ,  KELIN J. KUHN ,  RAFAEL RIOS ,  Titash Rakshit ,  Sivakumar Mudanai

IPC: H01L29/775 ,  H01L29/66 ,  H01L29/06

CPC classification number: H01L29/775 ,  H01L29/0669 ,  H01L29/205 ,  H01L29/66439 ,  H01L29/66795 ,  H01L29/785 ,  H01L2029/7857

Abstract: A junctionless accumulation-mode (JAM) semiconductive device is isolated from a semiconductive substrate by a reverse-bias band below a prominent feature of a JAM semiconductive body. Processes of making the JAM device include implantation and epitaxy.

Abstract translation: 无连接累积模式（JAM）半导体器件通过JAM半导体的突出特征之下的反向偏压带从半导体衬底隔离。 制造JAM器件的过程包括植入和外延。