公开(公告)号：US11063088B2

公开(公告)日：2021-07-13

申请号：US16706470

申请日：2019-12-06

Applicant: Intel Corporation

Inventor： Daniel Ouellette ,  Christopher Wiegand ,  Justin Brockman ,  Tofizur Rahman ,  Oleg Golonzka ,  Angeline Smith ,  Andrew Smith ,  James Pellegren ,  Aaron Littlejohn ,  Juan G. Alzate-Vinasco ,  Yu-Jin Chen ,  Tanmoy Pramanik

IPC: H01L27/22 ,  H01L43/02 ,  G11C11/16 ,  H01L43/10 ,  H01F10/32 ,  H01F41/32 ,  H01L43/12

Abstract: A memory device includes a first electrode, a second electrode and a magnetic tunnel junction (MTJ) between the first electrode and the second electrode. The MTJ includes a fixed magnet, a free magnet and a tunnel barrier between the fixed magnet and the free magnet. The MTJ further includes a conductive layer between the free magnet and the second electrode, the conductive layer having a metallic dopant, where the metallic dopant has a concentration that increase with distance from an interface between the free magnet and the conductive layer. A capping layer is between the conductive layer and the second electrode.

公开(公告)号：US20210175284A1

公开(公告)日：2021-06-10

申请号：US16706470

申请日：2019-12-06

Applicant: Intel Corporation

Inventor： Daniel Ouellette ,  Christopher Wiegand ,  Justin Brockman ,  Tofizur Rahman ,  Oleg Golonzka ,  Angeline Smith ,  Andrew Smith ,  James Pellegren ,  Aaron Littlejohn ,  Juan G. Alzate-Vinasco ,  Yu-Jin Chen ,  Tanmoy Pramanik

IPC: H01L27/22 ,  H01L43/02 ,  G11C11/16 ,  H01L43/10 ,  H01L43/12 ,  H01F41/32 ,  H01F10/32

Abstract: A memory device includes a first electrode, a second electrode and a magnetic tunnel junction (MTJ) between the first electrode and the second electrode. The MTJ includes a fixed magnet, a free magnet and a tunnel barrier between the fixed magnet and the free magnet. The MTJ further includes a conductive layer between the free magnet and the second electrode, the conductive layer having a metallic dopant, where the metallic dopant has a concentration that increase with distance from an interface between the free magnet and the conductive layer. A capping layer is between the conductive layer and the second electrode.