公开(公告)号：US20240213324A1

公开(公告)日：2024-06-27

申请号：US18087318

申请日：2022-12-22

Applicant: Intel Corporation

Inventor： Tuhin Guha Neogi ,  Hwichan Jun ,  Francis Goodwin

IPC: H01L29/10 ,  H01L25/065 ,  H01L29/06

CPC classification number: H01L29/1041 ,  H01L25/0655 ,  H01L29/0669 ,  H01L29/1095

Abstract: Techniques are provided herein to form semiconductor devices that include an elongated contact having two different heights on a source or drain region. A semiconductor device includes a gate structure around or otherwise on a semiconductor region (or channel region) that extends from a source or drain region. An elongated conductive contact is formed over the source or drain region that stretches or otherwise extends laterally across the source/drain trench above an adjacent source or drain region without contacting the adjacent source or drain region. A conductive via may contact the portion of the conductive contact over the adjacent source or drain region. Accordingly, the conductive contact may have a first thickness above the source or drain region and a second thickness above the adjacent source or drain region with the first thickness being greater than the second thickness.

公开(公告)号：US20240429235A1

公开(公告)日：2024-12-26

申请号：US18337697

申请日：2023-06-20

Applicant: Intel Corporation

Inventor： Bilal Chehab ,  Changyok Park ,  Tuhin Guha Neogi ,  George Joseph Sacks ,  Christophe Berteau-Pavy

IPC: H01L27/092 ,  H01L29/06 ,  H01L29/417 ,  H01L29/778 ,  H01L29/786

Abstract: A CFET may include two or more transistors stacked over each other. A transistor may be a FET including a forked semiconductor structure. The source region and drain region of a transistor may have a forked shape including a body and one or more branches protruding from the body. A branch may include a fin, nanoribbon, etc. The channel region may be between a branch of the source region and a branch of the drain region. The body of the source region and the body of the drain region may be on opposite sides of the channel region in two perpendicular directions. The two bodies may be diagonally arranged with respect to the channel region. The body of the source region or drain region may be over a contact that is electrically coupled to a frontside metal layer or a backside metal layer for signal transmission or power delivery.