公开(公告)号：US20230076831A1

公开(公告)日：2023-03-09

申请号：US17469634

申请日：2021-09-08

Applicant: Intel Corporation

Inventor： Praveen Kumar Kalsani ,  Ahmed Reza ,  Liu Liu ,  Deepak Thimmegowda ,  Zengtao Tony Liu ,  Sriram Balasubrahmanyam

IPC: H01L27/11575 ,  H01L27/11548 ,  H01L27/11556 ,  H01L27/11582

Abstract: An embodiment of a memory device may include a substrate, a first memory array of three-dimensional (3D) NAND cells disposed on the substrate, an isolation trench disposed on the substrate adjacent to the first memory array, and an input/output (IO) contact positioned within the isolation trench. Other embodiments are disclosed and claimed.