公开(公告)号：US10332871B2

公开(公告)日：2019-06-25

申请号：US15073950

申请日：2016-03-18

Applicant: Intel IP Corporation

Inventor： Christian Cornelius Russ ,  Giuseppe Curello ,  Tomasz Biedrzycki ,  Franz Kuttner ,  Luis F. Giles ,  Bernhard Stein

IPC: H01L27/02 ,  H01L23/367 ,  H01L23/50 ,  H01L23/522 ,  H01L49/02 ,  H01L27/06 ,  H01L27/092 ,  H02H9/04

Abstract: Described is an apparatus which comprises: a pad; a first transistor coupled in series with a second transistor and coupled to the pad; and a self-biasing circuit to bias the first transistor such that the first transistor is to be weakly biased during an electrostatic discharge (ESD) event. Described is also an apparatus which comprises: a first transistor; and a first local ballast resistor formed of a trench contact (TCN) layer, the first local ballast resistor having a first terminal coupled to either the drain or source terminal of the first transistor.

公开(公告)号：US20170271322A1

公开(公告)日：2017-09-21

申请号：US15073950

申请日：2016-03-18

Applicant: Intel IP Corporation

Inventor： Christian Cornelius Russ ,  Giuseppe Curello ,  Tomasz Biedrzycki ,  Franz Kuttner ,  Luis F. Giles ,  Bernhard Stein

IPC: H01L27/02 ,  H01L27/092 ,  H01L23/367 ,  H01L27/06 ,  H01L23/522 ,  H02H9/04 ,  H01L23/50

CPC classification number: H01L27/0285 ,  H01L23/367 ,  H01L23/3677 ,  H01L23/50 ,  H01L23/5226 ,  H01L23/5228 ,  H01L27/0629 ,  H01L27/0924 ,  H01L28/00 ,  H02H9/046

Abstract: Described is an apparatus which comprises: a pad; a first transistor coupled in series with a second transistor and coupled to the pad; and a self-biasing circuit to bias the first transistor such that the first transistor is to be weakly biased during an electrostatic discharge (ESD) event. Described is also an apparatus which comprises: a first transistor; and a first local ballast resistor formed of a trench contact (TCN) layer, the first local ballast resistor having a first terminal coupled to either the drain or source terminal of the first transistor.