公开(公告)号：US20150171260A1

公开(公告)日：2015-06-18

申请号：US14108697

申请日：2013-12-17

Applicant: Intermolecular Inc.

Inventor： Wei Liu ,  Amir Bayati ,  Zhi-Wen Wen Sun

IPC: H01L31/18 ,  H01L31/0224

CPC classification number: H01L31/1828 ,  H01L31/02963 ,  H01L31/073 ,  Y02E10/543

Abstract: Embodiments provided herein describe methods for forming nitrogen-doped zinc telluride, such as for use in photovoltaic devices. The zinc telluride layer is formed using physical vapor deposition (PVD) at a processing temperature of between about 100° C. and about 450° C. in a gaseous environment that includes between about 3% and about 10% by volume of nitrogen gas.

Abstract translation: 本文提供的实施方案描述了形成氮掺杂的碲化锌的方法，例如用于光伏器件中的方法。 在包括约3体积％至约10体积％的氮气的气体环境中，使用物理气相沉积（PVD）在约100℃至约450℃的加工温度下形成碲化锌层。

公开(公告)号：US20150187982A1

公开(公告)日：2015-07-02

申请号：US14141408

申请日：2013-12-26

Applicant: Intermolecular, Inc.

Inventor： Sergey Barabash ,  Amir Bayati ,  Dipankar Pramanik ,  Zhi-Wen Sun

IPC: H01L31/18

CPC classification number: H01L31/1832 ,  C23C14/0629 ,  C23C16/305 ,  H01L21/02411 ,  H01L21/02422 ,  H01L21/0248 ,  H01L21/02485 ,  H01L21/02499 ,  H01L21/02505 ,  H01L21/02562 ,  H01L21/02568 ,  H01L21/0262 ,  H01L21/02631 ,  H01L31/02966 ,  H01L31/0749 ,  H01L31/18 ,  H01L31/1836 ,  Y02E10/541 ,  Y02P70/521

Abstract: Embodiments provided herein describe methods for forming cadmium-manganese-telluride (CMT), such as for use in photovoltaic devices. A substrate including a material with a zinc blende crystalline structure is provided. CMT is formed above the substrate. During the formation of the CMT, cation-rich processing conditions are maintained. The resulting CMT may be more readily provided with p-type dopants when compared to conventionally-formed CMT.

Abstract translation: 本文提供的实施方案描述了形成碲化锰 - 碲化物（CMT）的方法，例如用于光伏器件中的方法。 提供了包括具有闪锌矿晶体结构的材料的基板。 CMT形成在衬底之上。 在CMT的形成过程中，维持富阳离子处理条件。 当与常规形成的CMT相比时，所得到的CMT可以更容易地被提供有p型掺杂剂。