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公开(公告)号:US20170117282A1
公开(公告)日:2017-04-27
申请号:US15334278
申请日:2016-10-25
Applicant: Intermolecular, Inc.
Inventor: Monica S. Mathur , Randall Higuchi , Thong Quang Ngo , Sandip Niyogi , Prashant Phatak
IPC: H01L27/108 , H01L49/02
CPC classification number: H01L27/10852 , H01L27/10814 , H01L27/11582 , H01L28/00 , H01L28/56 , H01L28/65
Abstract: Embodiments provided herein describe capacitor stacks and methods for forming capacitor stacks. A first electrode is formed above a substrate. A dielectric layer is formed above the first electrode. The dielectric layer includes zirconium. A second electrode is formed above the dielectric layer. At least one of the first electrode and the second electrode includes iridium.