公开(公告)号：US20170117282A1

公开(公告)日：2017-04-27

申请号：US15334278

申请日：2016-10-25

Applicant: Intermolecular, Inc.

Inventor： Monica S. Mathur ,  Randall Higuchi ,  Thong Quang Ngo ,  Sandip Niyogi ,  Prashant Phatak

IPC: H01L27/108 ,  H01L49/02

CPC classification number: H01L27/10852 ,  H01L27/10814 ,  H01L27/11582 ,  H01L28/00 ,  H01L28/56 ,  H01L28/65

Abstract: Embodiments provided herein describe capacitor stacks and methods for forming capacitor stacks. A first electrode is formed above a substrate. A dielectric layer is formed above the first electrode. The dielectric layer includes zirconium. A second electrode is formed above the dielectric layer. At least one of the first electrode and the second electrode includes iridium.