公开(公告)号：US09543516B2

公开(公告)日：2017-01-10

申请号：US14317255

申请日：2014-06-27

Applicant: Intermolecular Inc. ,  Kabushiki Kaisha Toshiba ,  SanDisk 3D LLC

Inventor： Jinhong Tong ,  Randall Higuchi ,  Imran Hashim ,  Vidyut Gopal

IPC: H01L45/00

CPC classification number: H01L45/1608 ,  H01L45/04 ,  H01L45/146 ,  H01L45/1616 ,  H01L45/1633 ,  H01L45/1658

Abstract: Methods for producing RRAM resistive switching elements having reduced forming voltage include doping to create oxygen deficiencies in the dielectric film. Oxygen deficiencies in a dielectric film promote formation of conductive pathways.

Abstract translation: 制造具有降低的成形电压的RRAM电阻式开关元件的方法包括掺杂以在电介质膜中产生氧缺陷。 电介质膜中的氧缺乏促进导电通路的形成。

公开(公告)号：US20170117282A1

公开(公告)日：2017-04-27

申请号：US15334278

申请日：2016-10-25

Applicant: Intermolecular, Inc.

Inventor： Monica S. Mathur ,  Randall Higuchi ,  Thong Quang Ngo ,  Sandip Niyogi ,  Prashant Phatak

IPC: H01L27/108 ,  H01L49/02

CPC classification number: H01L27/10852 ,  H01L27/10814 ,  H01L27/11582 ,  H01L28/00 ,  H01L28/56 ,  H01L28/65

Abstract: Embodiments provided herein describe capacitor stacks and methods for forming capacitor stacks. A first electrode is formed above a substrate. A dielectric layer is formed above the first electrode. The dielectric layer includes zirconium. A second electrode is formed above the dielectric layer. At least one of the first electrode and the second electrode includes iridium.