公开(公告)号：US20210035813A1

公开(公告)日：2021-02-04

申请号：US16530165

申请日：2019-08-02

申请人： International Business Machines Corporation

发明人： Hari Prasad Amanapu ,  Comelius Brown Peethala ,  Iqbal Rashid Saraf ,  Raghuveer Reddy Patlolla ,  Chih-Chao Yang

IPC分类号： H01L21/3105 ,  H01L21/02 ,  H01L21/311

摘要： Techniques for planarization of dielectric topography that stop in dielectric are provided. In one aspect, a method for planarization includes: depositing a first dielectric onto a wafer having a surface topography with peaks and valleys; depositing a second, different dielectric onto the first dielectric; and polishing the second dielectric down to the first dielectric to form a planar surface at an interface between the first dielectric and the second dielectric. Optionally, a follow-up CMP or etch can be performed using a ˜1:1 selective polish or etch to completely remove the second dielectric and an equivalent amount of the first dielectric to form a planar surface devoid of the peaks and valleys in the first dielectric. A device structure formed by the present techniques is also provided.