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公开(公告)号:US09318582B2
公开(公告)日:2016-04-19
申请号:US14215564
申请日:2014-03-17
IPC分类号: H01L21/8234 , H01L29/66 , H01L29/78
CPC分类号: H01L29/7848 , H01L21/823431 , H01L21/823456 , H01L21/823468 , H01L29/0649 , H01L29/0847 , H01L29/1608 , H01L29/161 , H01L29/165 , H01L29/66545 , H01L29/66795 , H01L29/6681 , H01L29/785 , H01L29/7856
摘要: After forming a gate spacer on each sidewall of a sacrificial gate structure, portions of each dielectric fin cap portion underneath the gate spacer is intentionally etched and undercut regions that are formed are filled and pinched off with a dielectric material of a conformal dielectric liner. Portions of the conformal dielectric liner in the undercut regions are not subject to the undercut during an epitaxial pre-clean process performed prior to forming an epitaxial source region and an epitaxial drain region on opposite sides of the sacrificial gate structure and remain in the undercut regions after forming the epitaxial source region and the epitaxial drain region.
摘要翻译: 在牺牲栅极结构的每个侧壁上形成栅极间隔物之后,有意地蚀刻在栅极间隔物下面的每个介电鳍帽部分的部分,并且用形成的绝缘电介质衬垫的电介质材料填充并夹住形成的底切区域。 在形成外延源区域和在牺牲栅极结构的相对侧上的外延漏极区域之后执行的外延预清洁工艺期间,底切区域中的共形绝缘衬垫的部分不会受到底切,并且保留在底切区域 在形成外延源极区域和外延漏极区域之后。
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公开(公告)号:US20150263128A1
公开(公告)日:2015-09-17
申请号:US14215564
申请日:2014-03-17
CPC分类号: H01L29/7848 , H01L21/823431 , H01L21/823456 , H01L21/823468 , H01L29/0649 , H01L29/0847 , H01L29/1608 , H01L29/161 , H01L29/165 , H01L29/66545 , H01L29/66795 , H01L29/6681 , H01L29/785 , H01L29/7856
摘要: After forming a gate spacer on each sidewall of a sacrificial gate structure, portions of each dielectric fin cap portion underneath the gate spacer is intentionally etched and undercut regions that are formed are filled and pinched off with a dielectric material of a conformal dielectric liner. Portions of the conformal dielectric liner in the undercut regions are not subject to the undercut during an epitaxial pre-clean process performed prior to forming an epitaxial source region and an epitaxial drain region on opposite sides of the sacrificial gate structure and remain in the undercut regions after forming the epitaxial source region and the epitaxial drain region.
摘要翻译: 在牺牲栅极结构的每个侧壁上形成栅极间隔物之后,有意地蚀刻在栅极间隔物下面的每个介电鳍帽部分的部分,并且用形成的绝缘电介质衬垫的电介质材料填充并夹住形成的底切区域。 在形成外延源区域和在牺牲栅极结构的相对侧上的外延漏极区域之后执行的外延预清洁工艺期间,底切区域中的共形绝缘衬垫的部分不会受到底切,并且保留在底切区域 在形成外延源极区域和外延漏极区域之后。
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公开(公告)号:US09704993B2
公开(公告)日:2017-07-11
申请号:US15130680
申请日:2016-04-15
IPC分类号: H01L29/06 , H01L29/78 , H01L29/66 , H01L21/8234 , H01L29/08 , H01L29/16 , H01L29/161 , H01L29/165
CPC分类号: H01L29/7848 , H01L21/823431 , H01L21/823456 , H01L21/823468 , H01L29/0649 , H01L29/0847 , H01L29/1608 , H01L29/161 , H01L29/165 , H01L29/66545 , H01L29/66795 , H01L29/6681 , H01L29/785 , H01L29/7856
摘要: After forming a gate spacer on each sidewall of a sacrificial gate structure, portions of each dielectric fin cap portion underneath the gate spacer is intentionally etched and undercut regions that are formed are filled and pinched off with a dielectric material of a conformal dielectric liner. Portions of the conformal dielectric liner in the undercut regions are not subject to the undercut during an epitaxial pre-clean process performed prior to forming an epitaxial source region and an epitaxial drain region on opposite sides of the sacrificial gate structure and remain in the undercut regions after forming the epitaxial source region and the epitaxial drain region.
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公开(公告)号:US20160233337A1
公开(公告)日:2016-08-11
申请号:US15130680
申请日:2016-04-15
IPC分类号: H01L29/78 , H01L29/165 , H01L29/16 , H01L29/161 , H01L29/06 , H01L29/08
CPC分类号: H01L29/7848 , H01L21/823431 , H01L21/823456 , H01L21/823468 , H01L29/0649 , H01L29/0847 , H01L29/1608 , H01L29/161 , H01L29/165 , H01L29/66545 , H01L29/66795 , H01L29/6681 , H01L29/785 , H01L29/7856
摘要: After forming a gate spacer on each sidewall of a sacrificial gate structure, portions of each dielectric fin cap portion underneath the gate spacer is intentionally etched and undercut regions that are formed are filled and pinched off with a dielectric material of a conformal dielectric liner. Portions of the conformal dielectric liner in the undercut regions are not subject to the undercut during an epitaxial pre-clean process performed prior to forming an epitaxial source region and an epitaxial drain region on opposite sides of the sacrificial gate structure and remain in the undercut regions after forming the epitaxial source region and the epitaxial drain region.
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