公开(公告)号：US20180016135A1

公开(公告)日：2018-01-18

申请号：US15645665

申请日：2017-07-10

Applicant: InvenSense, Inc.

Inventor： Daesung LEE ,  Jeff HUANG ,  Ki Young LEE

IPC: B81C1/00

CPC classification number: B81C1/00238 ,  B81B7/007 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2207/012 ,  B81C1/00269 ,  B81C1/00301 ,  B81C2203/0109 ,  B81C2203/035 ,  B81C2203/0792

Abstract: Provided herein is a method including forming a micro-electro-mechanical system (“MEMS”) wafer including a first MEMS device and a second MEMS device. A complementary metal-oxide semiconductor (“CMOS”) wafer is formed including a first electrically conductive via and a second electrically conductive via. A layer stack including a first conductive layer, a second conductive layer, and a bond layer is deposited over the first electrically conductive via and the second electrically conductive via. The layer stack is etched to define a first standoff, a second standoff, a third standoff, a first bump stop over the first electrically conductive via, and a second bump stop over the second electrically conductive via. The first bump stop and the second bump stop are etched to remove the bond layer. The first bump stop is further etched to remove the second conductive layer. The MEMS wafer is bonded to the CMOS wafer.