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公开(公告)号：US08647465B2
公开(公告)日：2014-02-11
申请号：US10560405
申请日：2004-06-14
申请人： Isabelle Chartier , Cécile Bory , Patrick Pouteau
发明人： Isabelle Chartier , Cécile Bory , Patrick Pouteau
CPC分类号： B01L3/502707 , B01L2200/12 , B01L2300/0816 , B01L2300/0887 , B29C65/4835 , B29C65/484 , B29C65/4845 , B29C65/485 , B29C65/526 , B29C66/026 , B29C66/028 , B29C66/112 , B29C66/1122 , B29C66/114 , B29C66/5346 , B29L2031/756 , B81B2201/058 , B81C3/001
摘要： Gluing process for micro-structured substrates. The invention is applicable particularly to the fabrication of micro-fluidic components. In order to glue a micro-structured substrate having upper coplanar plane areas and recesses between them, a grid is placed above the substrate, the grid is coated with a glue, using a tool that presses on the grid and locally brings it into contact with the areas, so as to deposit a film of glue droplets on them, and the grid is removed. Furthermore, the upper coplanar plane areas are treated before the film of glue droplets is deposited, this treatment being designed to adapt wettability of these areas to the glue.
摘要翻译： 微结构基材的胶合工艺。 本发明特别适用于微流体组件的制造。 为了将具有上共面平面区域和凹槽之间的微结构的衬底粘合在一起，在衬底上方放置格栅，使用压在栅格上的工具将其栅格涂覆在其上，并使其与其接触 这些区域，以便在其上沉积胶滴，并且网格被去除。 此外，在沉积胶滴的膜之前处理上部共面平面区域，该处理被设计成使这些区域的润湿性适应于胶水。
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2.发明授权公开(公告)号：US08288267B2
公开(公告)日：2012-10-16
申请号：US12775717
申请日：2010-05-07
IPC分类号： H01L21/44
CPC分类号： H05K3/4084 , H01L21/76885 , H05K3/0017 , H05K3/4647 , H05K3/4664 , H05K2201/091 , H05K2201/09909 , H05K2203/107 , H05K2203/1173 , H05K2203/128
摘要： A method for making an electric interconnection between two conducting layers, separated by at least one insulation or semi-conducting layer, which includes forming a stud extending between at least the lower conducting layer and the upper conducting layer, where the nature and/or the shape of the stud impart non-wettability properties relative to the material used for the separating layer.
摘要翻译： 一种用于在由至少一个绝缘或半导电层分开的两个导电层之间进行电互连的方法，包括形成在至少下导电层和上导电层之间延伸的螺柱，其中性质和/或 螺柱的形状相对于用于分离层的材料赋予非润湿性。
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公开(公告)号：US08314451B2
公开(公告)日：2012-11-20
申请号：US12777452
申请日：2010-05-11
申请人： Mohammed Benwadih , Cécile Bory
发明人： Mohammed Benwadih , Cécile Bory
IPC分类号： H01L51/10
CPC分类号： H01L51/0558 , H01L51/0541
摘要： An organic field-effect transistor includes: source and drain electrodes; a semiconductor layer made of an organic semiconductor material placed at least between said source and drain electrodes; a gate electrode suitable for creating an electric field that increases the density of mobile charge carriers in the semiconductor layer in order to create a conduction channel in this semiconductor layer between the source and drain electrodes when a voltage VG is applied to the gate electrode; and an electrical insulator layer interposed between the gate electrode and the semiconductor layer, characterized in that it further includes a piezoelectric layer placed close to the conduction channel, in the semiconductor layer between the source and drain electrodes or on the opposite side of the gate electrode with respect to the electrical insulator and semiconductor layers, alongside the source and drain electrodes, said piezoelectric layer being electrically isolated from said source and drain electrodes and from the semiconductor layer.
摘要翻译： 有机场效应晶体管包括：源极和漏极; 由至少位于所述源极和漏极之间的有机半导体材料制成的半导体层; 适于产生电场的栅电极，该电场增加了半导体层中的移动电荷载流子的密度，以便当将栅极电压施加电压VG时，在源极和漏极之间的该半导体层中产生导电通道; 以及插入在所述栅电极和所述半导体层之间的电绝缘体层，其特征在于，还包括位于所述源极和漏极之间的所述半导体层中或所述栅电极的相对侧上的靠近所述导通通道设置的压电层 相对于电绝缘体和半导体层，在源极和漏极旁边，所述压电层与所述源极和漏极电极以及半导体层电隔离。
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公开(公告)号：US20100289015A1
公开(公告)日：2010-11-18
申请号：US12777452
申请日：2010-05-11
申请人： Mohammed Benwadih , Cécile Bory
发明人： Mohammed Benwadih , Cécile Bory
IPC分类号： H01L51/10
CPC分类号： H01L51/0558 , H01L51/0541
摘要： An organic field-effect transistor includes: source and drain electrodes; a semiconductor layer made of an organic semiconductor material placed at least between said source and drain electrodes; a gate electrode suitable for creating an electric field that increases the density of mobile charge carriers in the semiconductor layer in order to create a conduction channel in this semiconductor layer between the source and drain electrodes when a voltage VG is applied to the gate electrode; and an electrical insulator layer interposed between the gate electrode and the semiconductor layer, characterized in that it further includes a piezoelectric layer placed close to the conduction channel, in the semiconductor layer between the source and drain electrodes or on the opposite side of the gate electrode with respect to the electrical insulator and semiconductor layers, alongside the source and drain electrodes, said piezoelectric layer being electrically isolated from said source and drain electrodes and from the semiconductor layer.
摘要翻译： 有机场效应晶体管包括：源极和漏极; 由至少位于所述源极和漏极之间的有机半导体材料制成的半导体层; 适于产生电场的栅电极，该电场增加了半导体层中的移动电荷载流子的密度，以便当将栅极电压施加电压VG时，在源极和漏极之间的该半导体层中产生导电通道; 以及插入在所述栅电极和所述半导体层之间的电绝缘体层，其特征在于，还包括位于所述源极和漏极之间的所述半导体层中或所述栅电极的相对侧上的靠近所述导通通道设置的压电层 相对于电绝缘体和半导体层，在源极和漏极旁边，所述压电层与所述源极和漏极电极以及半导体层电隔离。
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5.发明申请公开(公告)号：US20100221909A1
公开(公告)日：2010-09-02
申请号：US12775717
申请日：2010-05-07
IPC分类号： H01L21/768 , B05D5/12 , B05D3/06 , B05D3/04
CPC分类号： H05K3/4084 , H01L21/76885 , H05K3/0017 , H05K3/4647 , H05K3/4664 , H05K2201/091 , H05K2201/09909 , H05K2203/107 , H05K2203/1173 , H05K2203/128
摘要： This method for making an electric interconnection between two conducting layers separated by at least one insulation or semi-conducting layer, comprises forming a stud extending at least between the lower conducting layer and the upper conducting layer, wherein the nature and/or the shape of said stud impart non-wettability properties relative to the material used for the separating layer.
摘要翻译： 用于在由至少一个绝缘或半导体层分开的两个导电层之间进行电互连的方法包括形成至少在下导电层和上导电层之间延伸的螺柱，其中，自然和/或形状 所述螺柱相对于用于分离层的材料赋予非润湿性。
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