公开(公告)号：US20110132138A1

公开(公告)日：2011-06-09

申请号：US12958855

申请日：2010-12-02

申请人： Isamu SAITO ,  Yoshihiro TAKITANI ,  Shinichiro KATO ,  Makoto HOBO ,  Keiichiro KAMIYA ,  Takahiro MIYAZAKI ,  Takashi KANO

发明人： Isamu SAITO ,  Yoshihiro TAKITANI ,  Shinichiro KATO ,  Makoto HOBO ,  Keiichiro KAMIYA ,  Takahiro MIYAZAKI ,  Takashi KANO

IPC分类号： F16C3/06

CPC分类号： F16C3/06 ,  B21K1/08 ,  C23C8/32 ,  Y10T29/49286 ,  Y10T74/2173

摘要： A nitrocarburized crankshaft member made of a steel that includes C in an amount by weight of 0.25 to 0.32% as a required element and an optional element that may be included, and Fe and inevitable impurities in a remaining portion. The steel-made crankshaft member mainly includes ferrite and perlite, wherein at least a portion of the steel surface thereof having a ferrite surface area of 50% or greater is imparted with a nitrocarburized hard layer. The nitrocarburized hard layer includes a surface compound layer suppressed to a thickness of 10 to 35 μm, and a nitrogen diffusion zone below the surface compound layer having a diffusion depth of 700 μm or greater. The steel includes C, Si, Mn, Cu, Ni, and Cr as the required elements and Mo, N, s-Al, and Ti as the optional elements.

摘要翻译： 由钢制成的氮碳共渗曲轴构件，其包含作为所需元素的重量为0.25〜0.32％的C和可以包含的任选元素，剩余部分中的Fe和不可避免的杂质。 钢制曲轴构件主要包括铁素体和珍珠岩，其中具有铁素体表面积为50％以上的钢表面的至少一部分被赋予了氮碳共渗硬化层。 氮碳共渗硬化层包括被抑制为10〜35μm厚度的表面化合物层和扩散深度为700μm以上的表面化合物层下方的氮扩散区。 钢包含C，Si，Mn，Cu，Ni和Cr作为所需元素，Mo，N，s-Al和Ti作为任选元素。

公开(公告)号：US20100025701A1

公开(公告)日：2010-02-04

申请号：US12576813

申请日：2009-10-09

申请人： Takashi KANO ,  Masayuki HATA ,  Yasuhiko NOMURA

发明人： Takashi KANO ,  Masayuki HATA ,  Yasuhiko NOMURA

IPC分类号： H01L33/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/0075 ,  H01S5/0202 ,  H01S5/0207 ,  H01S5/0425 ,  H01S5/3063 ,  H01S2304/04 ,  H01S2304/12

摘要： A nitride-based semiconductor light-emitting device capable of suppressing reduction of characteristics and a yield and method of fabricating the same is described. The method of fabricating includes the steps of forming a groove portion on a nitride-based semiconductor substrate by selectively removing a prescribed region of a second region of the nitride-based semiconductor substrate other than a first region corresponding to a light-emitting portion of a nitride-based semiconductor layer up to a prescribed depth and forming the nitride-based semiconductor layer having a different composition from the nitride-based semiconductor substrate on the first region and the groove portion of the nitride-based semiconductor substrate.

摘要翻译： 描述了能够抑制特性降低和产量的氮化物半导体发光器件及其制造方法。 制造方法包括以下步骤：通过选择性地除去与氮化物基半导体衬底的发光部分相对应的第一区域以外的氮化物系半导体衬底的第二区域的规定区域，在氮化物系半导体衬底上形成沟槽部 氮化物基半导体层直到规定的深度，并且在氮化物基半导体衬底的第一区域和沟槽部分上形成具有与氮化物基半导体衬底不同的组成的氮化物基半导体层。