公开(公告)号：US5795831A

公开(公告)日：1998-08-18

申请号：US731612

申请日：1996-10-16

申请人： Izumi Nakayama ,  Yukio Masuda ,  Richard L. Bersin ,  Han Xu ,  Quain Geng

发明人： Izumi Nakayama ,  Yukio Masuda ,  Richard L. Bersin ,  Han Xu ,  Quain Geng

IPC分类号： G03F7/42 ,  H01L21/311 ,  C23F1/02

CPC分类号： H01L21/31138 ,  G03F7/42

摘要： A method for removing a resist layer includes an RIE process and a downstream microwave process, each performed such that the temperature of the wafer is no greater than about 60.degree. C. By performing these processes cold, the resist need not be pre-heated to drive off solvents. The RIE process and the microwave process can be performed sequentially or simultaneously.

摘要翻译： 除去抗蚀剂层的方法包括RIE工艺和下游微波处理，每个进行使得晶片的温度不大于约60℃。通过冷却进行这些处理，抗蚀剂不需要预热 驱除溶剂。 RIE过程和微波处理可以顺序或同时执行。

公开(公告)号：US07235478B2

公开(公告)日：2007-06-26

申请号：US11034788

申请日：2005-01-12

申请人： Quain Geng ,  Jeff Junhao Xu

发明人： Quain Geng ,  Jeff Junhao Xu

IPC分类号： H01L21/4763

CPC分类号： H01L21/76802 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31116 ,  H01L21/31144

摘要： A polymer spacer material may increase the dimensions of the patterned photoresist that is used as a mask to etch the layers below the photoresist, which in turn translates into smaller dimensions etched into the underlying materials. This allows for the formation of integrated circuits having smaller features, smaller overall size, and greater density of features. In particular, the use of a polymer spacer material allows for the formation of contacts within flash memory cells having decreased dimensions so that higher density flash memory cells may be created without causing shorts between contacts or shorts due to misalignment of the contacts. Additionally, the use of the polymer spacer material extends the use of photolithography technologies that are used to form the patterns into the photoresists.

摘要翻译： 聚合物间隔物材料可以增加用作掩模的图案化光致抗蚀剂的尺寸，以蚀刻光致抗蚀剂下面的层，其又转化成蚀刻到下面的材料中的较小尺寸。 这允许形成具有较小特征，更小的总体尺寸和更大的特征密度的集成电路。 特别地，使用聚合物间隔物材料允许在具有减小的尺寸的闪速存储器单元内形成触点，使得可以创建更高密度的闪存单元，而不会由于触点的不对准而导致触点之间的短路或短路。 此外，使用聚合物间隔物材料延长了用于将光刻胶形成图案的光刻技术的使用。

公开(公告)号：US20060154477A1

公开(公告)日：2006-07-13

申请号：US11034788

申请日：2005-01-12

申请人： Quain Geng ,  Jeff Xu

发明人： Quain Geng ,  Jeff Xu

IPC分类号： H01L21/4763

CPC分类号： H01L21/76802 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31116 ,  H01L21/31144

摘要： A polymer spacer material may increase the dimensions of the patterned photoresist that is used as a mask to etch the layers below the photoresist, which in turn translates into smaller dimensions etched into the underlying materials. This allows for the formation of integrated circuits having smaller features, smaller overall size, and greater density of features. In particular, the use of a polymer spacer material allows for the formation of contacts within flash memory cells having decreased dimensions so that higher density flash memory cells may be created without causing shorts between contacts or shorts due to misalignment of the contacts. Additionally, the use of the polymer spacer material extends the use of photolithography technologies that are used to form the patterns into the photoresists.

摘要翻译： 聚合物间隔物材料可以增加用作掩模的图案化光致抗蚀剂的尺寸，以蚀刻光致抗蚀剂下面的层，其又转化成蚀刻到下面的材料中的较小尺寸。 这允许形成具有较小特征，更小的总体尺寸和更大的特征密度的集成电路。 特别地，使用聚合物间隔物材料允许在具有减小的尺寸的闪速存储器单元内形成触点，使得可以创建更高密度的闪存单元，而不会由于触点的不对准而导致触点之间的短路或短路。 此外，使用聚合物间隔物材料延长了用于将光刻胶形成图案的光刻技术的使用。