公开(公告)号：US06864182B2

公开(公告)日：2005-03-08

申请号：US10185631

申请日：2002-06-28

申请人： Jörg Butschke ,  Albrecht Ehrmann ,  Karl Kragler ,  Florian Letzkus ,  Christian Reuter ,  Reinhard Springer

发明人： Jörg Butschke ,  Albrecht Ehrmann ,  Karl Kragler ,  Florian Letzkus ,  Christian Reuter ,  Reinhard Springer

IPC分类号： G03F1/20 ,  G03F1/22 ,  G03F1/80 ,  H01L21/302

CPC分类号： G03F1/22 ,  G03F1/20 ,  G03F1/80 ,  Y10S438/928 ,  Y10S438/942

摘要： Based upon an existing or to be produced multi-layered semiconductor-insulator-semiconductor carrier layer wafer (SOI substrate), irregularity of the etching conditions between the center and the edge region occurring during dry etching can be counteracted by a number of alternative steps, in particular, an additional layer construction compensating for the etching irregularity so that in any event an approximately homogeneous etching removal takes place over the entire area of the wafer to be etched.

摘要翻译： 基于现有的或将要制造的多层半导体 - 绝缘体 - 半导体载体层晶片（SOI衬底），在干法蚀刻期间发生的中心和边缘区域之间的蚀刻条件的不规则性可以通过若干替代步骤抵消， 特别地，补偿蚀刻不规则性的附加层结构，使得在任何情况下，在待蚀刻晶片的整个区域上发生大致均匀的蚀刻去除。

公开(公告)号：US06835508B2

公开(公告)日：2004-12-28

申请号：US10215227

申请日：2002-08-08

申请人： Jörg Butschke ,  Albrecht Ehrmann ,  Ernst Haugeneder ,  Frank-Michael Kamm ,  Florian Letzkus ,  Hans Löschner ,  Reinhard Springer

发明人： Jörg Butschke ,  Albrecht Ehrmann ,  Ernst Haugeneder ,  Frank-Michael Kamm ,  Florian Letzkus ,  Hans Löschner ,  Reinhard Springer

IPC分类号： G03F900

CPC分类号： G03F1/20 ,  G03F1/22

摘要： In order to increase the rigidity of a membrane mask that can be used for ion projection lithography, a second wafer made of the material of the membrane layer is provided in addition to a first wafer. The second wafer is patterned in the same way as the first wafer to form a second carrying ring and is fitted on the membrane layer in a mirror-inverted manner with respect to the first wafer so that the membrane area is arranged between the first and second carrying rings in a centered manner in the direction perpendicular to the membrane plane.

摘要翻译： 为了提高可用于离子投影光刻的膜掩模的刚性，除了第一晶片之外还提供由膜层材料制成的第二晶片。 以与第一晶片相同的方式对第二晶片进行构图，以形成第二承载环，并以相对于第一晶片的镜像反向的方式装配在膜层上，使得膜区域布置在第一和第二晶片之间 以垂直于膜平面的方向以中心方式携带环。

公开(公告)号：US06455429B1

公开(公告)日：2002-09-24

申请号：US09669469

申请日：2000-09-25

申请人： Jörg Butschke ,  Florian Letzkus ,  Elisabeth Penteker ,  Reinhard Springer ,  Bernd Höfflinger ,  Hans Löschner

发明人： Jörg Butschke ,  Florian Letzkus ,  Elisabeth Penteker ,  Reinhard Springer ,  Bernd Höfflinger ,  Hans Löschner

IPC分类号： H01L21302

CPC分类号： G03F1/20 ,  G03F1/22

摘要： Inventive methods are provided for the production of large-area membrane masks, wherein an inexpedient mechanical excessive strain on the membrane or of the membrane layer/etching stop layer/supporting wafer system or the resulting breaking of the components is avoided, which excessive strain occurs particularly due to the employment of an etching cell or generally due to the thin semiconductor layers. The stripping of the semiconductor support layer is preferably performed in two partial steps that are carried out in a mechanically sealed etching cell or with a protective coating, or that one partial step is performed with an etching cell and one with a protective coating, or that the stripping of the semiconductor support layer is performed in a mechanically sealed etching cell initially with a supporting grid and that the supporting grid is removed only after withdrawal from the etching cell.

摘要翻译： 提供了用于生产大面积膜掩模的本发明的方法，其中避免了膜或膜层/蚀刻停止层/支撑晶片系统上的不适当的机械过度应变或所得到的部件断裂，这种过度的应变发生 特别是由于使用蚀刻单元或通常由于薄的半导体层而导致。 半导体支撑层的剥离优选以机械密封的蚀刻池或保护涂层中进行的两个部分步骤进行，或者用蚀刻池和一个保护涂层进行一个部分步骤，或 半导体支撑层的剥离在最初具有支撑栅格的机械密封蚀刻池中执行，并且仅在从蚀刻单元退出之后才移除支撑栅。

公开(公告)号：US07687783B2

公开(公告)日：2010-03-30

申请号：US12038326

申请日：2008-02-27

申请人： Elmar Platzgummer ,  Hans Löschner ,  Samuel Kvasnica ,  Reinhard Springer ,  Mathias Irmscher ,  Florian Letzkus ,  Jörg Butschke

发明人： Elmar Platzgummer ,  Hans Löschner ,  Samuel Kvasnica ,  Reinhard Springer ,  Mathias Irmscher ,  Florian Letzkus ,  Jörg Butschke

IPC分类号： H01J3/14

CPC分类号： G03F1/20 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/045 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2237/0437

摘要： The invention relates to a multi-beam deflector array device for use in a particle-beam exposure apparatus employing a beam of charged particles, the multi-beam deflector array device having a plate-like shape with a membrane region, the membrane region including a first side facing towards the incoming beam of particles, an array of apertures, each aperture allowing passage of a corresponding beamlet formed out of the beam of particles, a plurality of depressions, each depression being associated with at least one aperture, and an array of electrodes, each aperture being associated with at least one electrode and each electrode being located in a depression, the electrodes being configured to realize a non-deflecting state, wherein the particles that pass through the apertures are allowed to travel along a desired path, and a deflecting state, wherein the particles are deflected off the desired path.

摘要翻译： 本发明涉及一种用于使用带电粒子束的粒子束曝光装置中的多光束偏转器阵列装置，该多光束偏转器阵列装置具有带有膜区域的板状形状，该膜区域包括一个 第一面朝向输入的粒子束，一组孔，每个孔允许通过由粒子束形成的对应子束，多个凹陷，每个凹陷与至少一个孔相关联，以及阵列的 电极，每个孔与至少一个电极相关联，并且每个电极位于凹陷中，电极被配置为实现非偏转状态，其中允许通过孔的颗粒沿着期望的路径行进，并且 偏转状态，其中颗粒偏离所需的路径。

公开(公告)号：US06696371B2

公开(公告)日：2004-02-24

申请号：US10163007

申请日：2002-06-05

申请人： Joerg Butschke ,  Albrecht Ehrmann ,  Ernst Haugeneder ,  Florian Letzkus ,  Reinhard Springer

发明人： Joerg Butschke ,  Albrecht Ehrmann ,  Ernst Haugeneder ,  Florian Letzkus ,  Reinhard Springer

IPC分类号： H01L21302

CPC分类号： G03F1/20 ,  Y10S438/942

摘要： The membrane mask is based on an SOI substrate. In an existing or subsequently produced multilayer semiconductor/insulator/semiconductor-carrier-layer substrate, the inhomogeneous mechanical stresses in the semiconductor layer, which lead to undesirable distortions, are converted at least partly into a homogenous state prior to the structuring of the semiconductor layer. In order to accomplish this, either an additional layer structure is provided on an existing SOI substrate, or a modified layer structure is provided in the fabrication of the SOI substrate, or both.

摘要翻译： 膜掩模基于SOI衬底。 在现有的或随后生产的多层半导体/绝缘体/半导体载体层基板中，导致不期望的失真的半导体层中的不均匀机械应力在半导体层的结构化之前至少部分地转变为均匀状态 。 为了实现这一点，在现有SOI衬底上提供附加层结构，或者在SOI衬底的制造中提供修改层结构，或者两者。

公开(公告)号：US20080203317A1

公开(公告)日：2008-08-28

申请号：US12038326

申请日：2008-02-27

申请人： Elmar Platzgummer ,  Hans Loschner ,  Samuel Kvasnica ,  Reinhard Springer ,  Mathias Irmscher ,  Florian Letzkus ,  Jorg Butschke

发明人： Elmar Platzgummer ,  Hans Loschner ,  Samuel Kvasnica ,  Reinhard Springer ,  Mathias Irmscher ,  Florian Letzkus ,  Jorg Butschke

IPC分类号： H01J3/14 ,  H01L21/20

CPC分类号： G03F1/20 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/045 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2237/0437

摘要： The invention relates to a multi-beam deflector array device for use in a particle-beam exposure apparatus employing a beam of charged particles, the multi-beam deflector array device having a plate-like shape with a membrane region, the membrane region including a first side facing towards the incoming beam of particles, an array of apertures, each aperture allowing passage of a corresponding beamlet formed out of the beam of particles, a plurality of depressions, each depression being associated with at least one aperture, and an array of electrodes, each aperture being associated with at least one electrode and each electrode being located in a depression, the electrodes being configured to realize a non-deflecting state, wherein the particles that pass through the apertures are allowed to travel along a desired path, and a deflecting state, wherein the particles are deflected off the desired path.

摘要翻译： 本发明涉及一种用于使用带电粒子束的粒子束曝光装置中的多光束偏转器阵列装置，该多光束偏转器阵列装置具有带有膜区域的板状形状，该膜区域包括一个 第一面朝向输入的粒子束，一组孔，每个孔允许通过由粒子束形成的对应子束，多个凹陷，每个凹陷与至少一个孔相关联，以及阵列的 电极，每个孔与至少一个电极相关联，并且每个电极位于凹陷中，电极被配置为实现非偏转状态，其中允许通过孔的颗粒沿着期望的路径行进，并且 偏转状态，其中颗粒偏离所需的路径。