公开(公告)号：US20170005265A1

公开(公告)日：2017-01-05

申请号：US15125840

申请日：2015-03-06

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Satoshi Sugahara ,  Yusuke Shuto ,  Minoru Kurosawa ,  Hiroshi Funakubo ,  Shuichiro Yamamoto

IPC: H01L49/00 ,  H01L27/24 ,  H01L27/22

CPC classification number: H01L49/00 ,  G11C11/16 ,  G11C14/0081 ,  G11C14/009 ,  H01L27/226 ,  H01L27/2436 ,  H03K3/356

Abstract: A transistor includes: a piezoresistor through which carriers conduct; a source that injects the carriers into the piezoresistor; a drain that receives the carriers from the piezoresistor; a piezoelectric material that is located so as to surround the piezoresistor and applies a pressure to the piezoresistor; and a gate that applies a voltage to the piezoelectric material so that the piezoelectric material applies a pressure to the piezoresistor.

Abstract translation: 晶体管包括：载流子通过其传导的压电电阻; 将载流子注入压电电阻器的源; 从压电电阻接收载流子的漏极; 定位成围绕压电电阻并向压敏电阻施加压力的压电材料; 以及向压电材料施加电压使得压电材料向压电电阻施加压力的栅极。

公开(公告)号：US09842992B2

公开(公告)日：2017-12-12

申请号：US15125840

申请日：2015-03-06

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Satoshi Sugahara ,  Yusuke Shuto ,  Minoru Kurosawa ,  Hiroshi Funakubo ,  Shuichiro Yamamoto

IPC: H01L49/00 ,  H01L27/24 ,  H03K3/356 ,  G11C14/00 ,  H01L27/22 ,  G11C11/16

CPC classification number: H01L49/00 ,  G11C11/16 ,  G11C14/0081 ,  G11C14/009 ,  H01L27/226 ,  H01L27/2436 ,  H03K3/356

Abstract: A transistor includes: a piezoresistor through which carriers conduct; a source that injects the carriers into the piezoresistor; a drain that receives the carriers from the piezoresistor; a piezoelectric material that is located so as to surround the piezoresistor and applies a pressure to the piezoresistor; and a gate that applies a voltage to the piezoelectric material so that the piezoelectric material applies a pressure to the piezoresistor.