公开(公告)号：US20170186984A1

公开(公告)日：2017-06-29

申请号：US15460455

申请日：2017-03-16

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY ,  TOKYO INSTITUTE OF TECHNOLOGY ,  Asahi Glass Company, Limited

Inventor： Hideo HOSONO ,  Yoshitake TODA ,  Satoru WATANABE ,  Toshinari WATANABE ,  Kazuhiro ITO ,  Naomichi MIYAKAWA ,  Nobuhiro NAKAMURA

IPC: H01L51/42 ,  H01L31/032 ,  H01J37/34 ,  C23C14/08 ,  C23C14/34

CPC classification number: H01L51/4233 ,  C23C14/08 ,  C23C14/086 ,  C23C14/3407 ,  C23C14/3414 ,  C23C14/352 ,  H01J37/3429 ,  H01L31/0324 ,  H01L51/5072 ,  H01L51/5092 ,  H01L51/5096 ,  H01L2031/0344 ,  H01L2251/303 ,  H01L2251/306 ,  Y02E10/549 ,  Y02P70/521

Abstract: A thin film of metal oxide includes zinc (Zn); tin (Sn); silicon (Si); and oxygen (O). In terms of oxide, based on 100 mol % of total of oxides of the thin film, SnO2 is greater than 15 mol % but less than or equal to 95 mol %.

公开(公告)号：US20210343961A1

公开(公告)日：2021-11-04

申请号：US17152142

申请日：2021-01-19

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Hideo HOSONO ,  Yoshitake TODA ,  Satoru WATANABE ,  Toshinari WATANABE ,  Kazuhiro ITO ,  Naomichi MIYAKAWA ,  Nobuhiro NAKAMURA

IPC: H01L51/42 ,  C23C14/08 ,  C23C14/34 ,  C23C14/35 ,  H01J37/34 ,  H01L31/032

Abstract: A thin film of metal oxide includes zinc (Zn); tin (Sn); silicon (Si); and oxygen (O). In terms of oxide, based on 100 mol % of total of oxides of the thin film, SnO2 is greater than 15 mol % but less than or equal to 95 mol %.

公开(公告)号：US20190058142A1

公开(公告)日：2019-02-21

申请号：US16169078

申请日：2018-10-24

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY ,  TOKYO INSTITUTE OF TECHNOLOGY ,  AGC Inc.

Inventor： Hideo HOSONO ,  Yoshitake TODA ,  Satoru WATANABE ,  Toshinari WATANABE ,  Kazuhiro ITO ,  Naomichi MIYAKAWA ,  Nobuhiro NAKAMURA

IPC: H01L51/42 ,  H01L31/032 ,  C23C14/08 ,  C23C14/34 ,  C23C14/35 ,  H01J37/34 ,  H01L51/50 ,  H01L31/0256

Abstract: A thin film of metal oxide includes zinc (Zn); tin (Sn); silicon (Si); and oxygen (O). In terms of oxide, based on 100 mol % of total of oxides of the thin film, SnO2 is greater than 15 mol % but less than or equal to 95 mol %.