公开(公告)号：US20170186984A1

公开(公告)日：2017-06-29

申请号：US15460455

申请日：2017-03-16

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY ,  TOKYO INSTITUTE OF TECHNOLOGY ,  Asahi Glass Company, Limited

Inventor： Hideo HOSONO ,  Yoshitake TODA ,  Satoru WATANABE ,  Toshinari WATANABE ,  Kazuhiro ITO ,  Naomichi MIYAKAWA ,  Nobuhiro NAKAMURA

IPC: H01L51/42 ,  H01L31/032 ,  H01J37/34 ,  C23C14/08 ,  C23C14/34

CPC classification number: H01L51/4233 ,  C23C14/08 ,  C23C14/086 ,  C23C14/3407 ,  C23C14/3414 ,  C23C14/352 ,  H01J37/3429 ,  H01L31/0324 ,  H01L51/5072 ,  H01L51/5092 ,  H01L51/5096 ,  H01L2031/0344 ,  H01L2251/303 ,  H01L2251/306 ,  Y02E10/549 ,  Y02P70/521

Abstract: A thin film of metal oxide includes zinc (Zn); tin (Sn); silicon (Si); and oxygen (O). In terms of oxide, based on 100 mol % of total of oxides of the thin film, SnO2 is greater than 15 mol % but less than or equal to 95 mol %.

公开(公告)号：US20210343961A1

公开(公告)日：2021-11-04

申请号：US17152142

申请日：2021-01-19

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Hideo HOSONO ,  Yoshitake TODA ,  Satoru WATANABE ,  Toshinari WATANABE ,  Kazuhiro ITO ,  Naomichi MIYAKAWA ,  Nobuhiro NAKAMURA

IPC: H01L51/42 ,  C23C14/08 ,  C23C14/34 ,  C23C14/35 ,  H01J37/34 ,  H01L31/032

Abstract: A thin film of metal oxide includes zinc (Zn); tin (Sn); silicon (Si); and oxygen (O). In terms of oxide, based on 100 mol % of total of oxides of the thin film, SnO2 is greater than 15 mol % but less than or equal to 95 mol %.

公开(公告)号：US20190058142A1

公开(公告)日：2019-02-21

申请号：US16169078

申请日：2018-10-24

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY ,  TOKYO INSTITUTE OF TECHNOLOGY ,  AGC Inc.

Inventor： Hideo HOSONO ,  Yoshitake TODA ,  Satoru WATANABE ,  Toshinari WATANABE ,  Kazuhiro ITO ,  Naomichi MIYAKAWA ,  Nobuhiro NAKAMURA

IPC: H01L51/42 ,  H01L31/032 ,  C23C14/08 ,  C23C14/34 ,  C23C14/35 ,  H01J37/34 ,  H01L51/50 ,  H01L31/0256

Abstract: A thin film of metal oxide includes zinc (Zn); tin (Sn); silicon (Si); and oxygen (O). In terms of oxide, based on 100 mol % of total of oxides of the thin film, SnO2 is greater than 15 mol % but less than or equal to 95 mol %.

公开(公告)号：US20170186989A1

公开(公告)日：2017-06-29

申请号：US15460426

申请日：2017-03-16

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY ,  TOKYO INSTITUTE OF TECHNOLOGY ,  Asahi Glass Company, Limited

Inventor： Hideo HOSONO ,  Yoshitake TODA ,  Nobuhiro NAKAMURA ,  Naomichi MIYAKAWA ,  Satoru WATANABE ,  Toshinari WATANABE

IPC: H01L51/50 ,  H01L51/56 ,  H01L51/00 ,  H01L27/32 ,  H01L51/52

CPC classification number: H01L51/5092 ,  H01L27/3244 ,  H01L27/3276 ,  H01L27/3281 ,  H01L51/0096 ,  H01L51/5012 ,  H01L51/5048 ,  H01L51/5056 ,  H01L51/5072 ,  H01L51/5088 ,  H01L51/5203 ,  H01L51/56 ,  H01L2251/5392 ,  H01L2251/558 ,  H05B33/06 ,  H05B33/26

Abstract: A light-emitting device includes a pair of first electrodes arranged separated from and opposing each other on a first surface of a substrate; a light-emitting layer arranged on at least one of the first electrodes; a second electrode arranged on the light-emitting layer; and a bridge layer connecting the first electrodes. The bridge layer is formed of a material having a resistance that falls within a range of 100 kΩ to 100 MΩ.