Wafer-level test method for optoelectronic chips

    公开(公告)号:US12210057B2

    公开(公告)日:2025-01-28

    申请号:US18287141

    申请日:2022-04-12

    Abstract: A method for testing optoelectronic chips that are arranged on a wafer and comprise electric interfaces in the form of contact pads and optical interfaces, which are arranged in a fixed manner relative to the electric interfaces, in the form of optical deflecting elements, e.g. grating couplers, at a specified coupling angle. In the process, the wafer is adjusted in three adjustment steps in such a manner that one of the chips is positioned relative to a contacting module such that the electric interfaces of the chip and the contacting module are in contact with one another and the optical interfaces of the chip and the contacting module assume a maximum position of the optical coupling.

    Contacting module for contacting optoelectronic chips

    公开(公告)号:US12203983B2

    公开(公告)日:2025-01-21

    申请号:US18041594

    申请日:2021-01-27

    Abstract: A contacting module and a method for assembling a contacting module with an optical module, containing an optical block made of glass, and with an electronics module, the optical block being connected via an adhesive connection to the electronics module or the optical module having a mounting plate, which is mounted on the electronics module so as to be repeatedly releasable therefrom and is connected to the optical block via an adhesive connection. The adhesive connection is produced via at least three cylinder pins, which each have a first end face bearing against the optical block by an adhesive and are glued in through-bores in the carrier plate or the mounting plate.

    Device for measuring a power density distribution of a radiation source
    5.
    发明授权
    Device for measuring a power density distribution of a radiation source 有权
    用于测量辐射源的功率密度分布的装置

    公开(公告)号:US09518865B2

    公开(公告)日:2016-12-13

    申请号:US14471314

    申请日:2014-08-28

    CPC classification number: G01J1/4257 G01J1/0407 G01J1/429

    Abstract: A device and method for measuring a power density distribution of a radiation source is provided. The device includes a radiation source designed to emit a light beam in a radiation direction; a substrate disposed downstream of the radiation source in the radiation direction and having an extent in an x-direction and a y-direction, the substrate having a first region and at least one further second region, and the first region comprises a diffractive structure designed to separate the light beam impinging on the substrate into a zeroth order of diffraction and at least one first order of diffraction; and a detector unit disposed downstream of the substrate in the radiation direction and designed to measure the intensity of the first order of diffraction transmitted through the substrate and to derive a power density distribution therefrom.

    Abstract translation: 提供了一种用于测量辐射源的功率密度分布的装置和方法。 该装置包括设计成沿辐射方向发射光束的辐射源; 衬底,其设置在所述辐射源的所述辐射源的下游并具有x方向和y方向的范围,所述衬底具有第一区域和至少一个另外的第二区域,并且所述第一区域包括设计的衍射结构 将入射到基板上的光束分离成零级衍射和至少一个衍射级; 以及检测器单元,其沿辐射方向设置在所述基板的下游,并且被设计成测量透过所述基板的一阶衍射的强度并从其导出功率密度分布。

Patent Agency Ranking