公开(公告)号：US11877519B2

公开(公告)日：2024-01-16

申请号：US17289756

申请日：2019-05-23

Applicant: JIANGSU LEUVEN INSTRUMENTS CO. LTD

Inventor： Zhongyuan Jiang ,  Ziming Liu ,  Juebin Wang ,  Dongchen Che ,  Hushan Cui ,  Dongdong Hu ,  Lu Chen ,  Huiqun Ren ,  Zhiwen Zou ,  Kaidong Xu

IPC: H10N50/01 ,  H10N50/80

CPC classification number: H10N50/01 ,  H10N50/80

Abstract: A semiconductor device manufacturing method, wherein the etching apparatus used includes a sample loading chamber (15), a vacuum transition chamber (14), a reactive ion plasma etching chamber (10), an ion beam etching chamber (11), a film coating chamber (12), and a vacuum transport chamber (13). Without interrupting the vacuum, reactive ion etching is first adopted to etch to an isolation layer (102); then, ion beam etching is performed to etch into a fixed layer (101) and stopped near a bottom electrode metal layer (100), leaving only a small amount of the fixed layer (101); subsequently, reactive ion etching is adopted to etch to the bottom electrode metal layer (100); and finally, ion beam cleaning is performed to remove metal residues and sample surface treatment, and coating protection is performed.

公开(公告)号：US12063866B2

公开(公告)日：2024-08-13

申请号：US17289753

申请日：2019-05-23

Applicant: JIANGSU LEUVEN INSTRUMENTS CO. LTD

Inventor： Juebin Wang ,  Zhongyuan Jiang ,  Ziming Liu ,  Dongchen Che ,  Hushan Cui ,  Dongdong Hu ,  Lu Chen ,  Dajian Han ,  Zhiwen Zou ,  Kaidong Xu

IPC: H10N50/01 ,  G11C11/16 ,  H01L21/3065 ,  H10B61/00 ,  H10N50/10 ,  H10N50/80 ,  H10N50/85

CPC classification number: H10N50/01 ,  G11C11/161 ,  H01L21/3065 ,  H10B61/00 ,  H10N50/10 ,  H10N50/80 ,  H10N50/85

Abstract: A multilayer magnetic tunnel junction etching method and an MRAM device. A wafer is processed according to particular steps without interrupting vacuum. A reactive ion plasma etching chamber (10) and an ion beam etching chamber (11) are used separately at least one time. The processing of a multilayer magnetic tunnel junction is always in a vacuum environment, thereby avoiding the impact of an external environment on etching. By means of the process of combining etching and cleaning, a device structure maintains good steepness, and the metal contamination and damage of a magnetic tunnel junction film structure are significantly decreased, thereby greatly increasing the performance and reliability of a device. In addition, use of both the ion beam etching chamber (11) and the reactive ion plasma etching chamber (10) solves the technical problem of an existing single etching method, and increases production efficiency and etching process precision.

公开(公告)号：US12035633B2

公开(公告)日：2024-07-09

申请号：US17289755

申请日：2019-05-23

Applicant: JIANGSU LEUVEN INSTRUMENTS CO. LTD

Inventor： Ziming Liu ,  Juebin Wang ,  Zhongyuan Jiang ,  Dongchen Che ,  Hushan Cui ,  Dongdong Hu ,  Lu Chen ,  Hongyue Sun ,  Dajian Han ,  Kaidong Xu

IPC: H10N50/01 ,  H10N50/10

CPC classification number: H10N50/01 ,  H10N50/10

Abstract: Disclosed is method for etching a magnetic tunnel junction. An etching apparatus used comprises a sample loading chamber, a vacuum transition chamber, a reactive ion plasma etching chamber, an ion beam etching chamber, a film coating chamber and a vacuum transport chamber. The method comprises multiple performances of the steps of reactive ion and plasma etching, ion beam etching and film coating. Multiple performances of entry into and exit from the chambers are required during the process, and the delivery between the chambers is performed under vacuum.