公开(公告)号：US20120115318A1

公开(公告)日：2012-05-10

申请号：US13351334

申请日：2012-01-17

申请人： JOHN D. POLLOCK ,  ZHIMIN WAN ,  ERIK COLLART

发明人： JOHN D. POLLOCK ,  ZHIMIN WAN ,  ERIK COLLART

IPC分类号： H01L21/265

CPC分类号： C23C14/48 ,  H01L21/26513 ,  H01L21/26593 ,  H01L21/324

摘要： Techniques for low temperature ion implantation are provided to improve the throughput. During a low temperature ion implantation, an implant process may be started before the substrate temperature is decreased to be about to a prescribed implant temperature by a cooling process, and a heating process may be started to increase the substrate temperature before the implant process is finished. Moreover, one or more temperature adjust process may be performed during one or more portion of the implant process, such that the substrate temperature may be controllably higher than the prescribe implant temperature during the implant process.

摘要翻译： 提供了用于低温离子注入的技术以提高生产量。 在低温离子注入期间，可以在通过冷却过程将衬底温度降低到约为规定的植入温度之前开始植入工艺，并且可以开始加热过程以在植入过程完成之前增加衬底温度 。 此外，可以在植入过程的一个或多个部分期间执行一个或多个温度调节过程，使得在植入过程期间，衬底温度可以可控地高于处方植入物温度。

公开(公告)号：US20110244669A1

公开(公告)日：2011-10-06

申请号：US12750983

申请日：2010-03-31

申请人： JOHN D. POLLOCK ,  ZHIMIN WAN ,  ERIK COLLART

发明人： JOHN D. POLLOCK ,  ZHIMIN WAN ,  ERIK COLLART

IPC分类号： H01L21/265

CPC分类号： C23C14/48 ,  H01L21/26513 ,  H01L21/26593 ,  H01L21/324

摘要： Techniques for low temperature ion implantation are provided to improve the throughput. During a low temperature ion implantation, an implant process may be started before the substrate temperature is decreased to be about to a prescribed implant temperature by a cooling process, and a heating process may be started to increase the substrate temperature before the implant process is finished. Moreover, one or more temperature adjust process may be performed during one or more portion of the implant process, such that the substrate temperature may be controllably higher than the prescribe implant temperature during the implant process.

摘要翻译： 提供了用于低温离子注入的技术以提高生产量。 在低温离子注入期间，可以在通过冷却过程将衬底温度降低到约为规定的植入温度之前开始植入工艺，并且可以开始加热过程以在植入过程完成之前增加衬底温度 。 此外，可以在植入过程的一个或多个部分期间执行一个或多个温度调节过程，使得在植入过程期间，衬底温度可以可控地高于处方植入物温度。

公开(公告)号：US20110229987A1

公开(公告)日：2011-09-22

申请号：US12727573

申请日：2010-03-19

申请人： JOHN D. POLLOCK ,  ZHIMIN WAN ,  ERIK COLLART

发明人： JOHN D. POLLOCK ,  ZHIMIN WAN ,  ERIK COLLART

IPC分类号： H01L21/66 ,  H01L21/265

CPC分类号： H01L21/265 ,  H01J2237/2001 ,  H01J2237/31701 ,  H01L21/67248 ,  Y10S438/905

摘要： Techniques for low temperature ion implantation are provided to improve throughput. Specifically, the pressure of the backside gas may temporarily, continually or continuously increase before the starting of the implant process, such that the wafer may be quickly cooled down from room temperature to be essentially equal to the prescribed implant temperature. Further, after the vacuum venting process, the wafer may wait an extra time in the load lock chamber before the wafer is moved out the ion implanter, in order to allow the wafer temperature to reach a higher temperature quickly for minimizing water condensation on the wafer surface. Furthermore, to accurately monitor the wafer temperature during a period of changing wafer temperature, a non-contact type temperature measuring device may be used to monitor wafer temperature in a real time manner with minimized condensation.

摘要翻译： 提供了低温离子注入技术，以提高产量。 具体地说，在植入过程开始之前，背面气体的压力可以暂时地，持续地或连续增加，使得晶片可以从室温快速冷却到基本等于规定的植入温度。 此外，在真空排气过程之后，晶片可以在晶片移出离子注入机之前在加载锁定室中等待额外的时间，以便允许晶片温度快速达到更高的温度以使晶片上的水冷凝最小化 表面。 此外，为了在晶片温度变化期间精确地监视晶片温度，可以使用非接触型温度测量装置以最小化的冷凝实时监测晶片温度。

公开(公告)号：US20110049383A1

公开(公告)日：2011-03-03

申请号：US12553946

申请日：2009-09-03

申请人： ZHIMIN WAN ,  JOHN D. POLLOCK ,  DON BERRIAN

发明人： ZHIMIN WAN ,  JOHN D. POLLOCK ,  DON BERRIAN

IPC分类号： C23C14/48 ,  H01J27/02

CPC分类号： C23C14/48 ,  C23C14/04 ,  C23C14/50 ,  H01J37/09 ,  H01J37/3171 ,  H01J2237/0458 ,  H01J2237/1503 ,  H01J2237/20228 ,  H01J2237/30488

摘要： An ion implanter and an ion implant method for achieving a two-dimensional implantation on a wafer are disclosed. The ion implanter includes an ion source, a mass analyzer, a wafer driving mechanism, an aperture mechanism, and an aperture driving mechanism. The ion source and the mass analyzer are capable of providing an ion beam. The wafer driving mechanism is configured to drive a wafer along only a first direction. The aperture mechanism has an aperture for filtering the ion beam before the wafer is implanted. The aperture driving mechanism is configured to drive the aperture along a second direction intersecting the first direction. By moving the wafer and the aperture along different directions separately, the projection of the ion beam can achieve a two-dimensional implantation on the wafer. Here, at least one of the directions is optionally parallel to the longer dimension of the two-dimensional cross-section of the ion beam.

摘要翻译： 公开了一种用于在晶片上实现二维注入的离子注入机和离子注入方法。 离子注入机包括离子源，质量分析器，晶片驱动机构，孔径机构和孔径驱动机构。 离子源和质量分析仪能够提供离子束。 晶片驱动机构构造成仅沿第一方向驱动晶片。 光圈机构具有用于在晶片植入之前对离子束进行过滤的孔。 孔径驱动机构构造成沿着与第一方向相交的第二方向驱动孔。 通过分别沿不同方向移动晶片和孔，离子束的投影可以在晶片上实现二维注入。 这里，至少一个方向可选地平行于离子束的二维横截面的较长尺寸。