公开(公告)号：US20120115318A1

公开(公告)日：2012-05-10

申请号：US13351334

申请日：2012-01-17

Applicant: JOHN D. POLLOCK ,  ZHIMIN WAN ,  ERIK COLLART

Inventor： JOHN D. POLLOCK ,  ZHIMIN WAN ,  ERIK COLLART

IPC: H01L21/265

CPC classification number: C23C14/48 ,  H01L21/26513 ,  H01L21/26593 ,  H01L21/324

Abstract: Techniques for low temperature ion implantation are provided to improve the throughput. During a low temperature ion implantation, an implant process may be started before the substrate temperature is decreased to be about to a prescribed implant temperature by a cooling process, and a heating process may be started to increase the substrate temperature before the implant process is finished. Moreover, one or more temperature adjust process may be performed during one or more portion of the implant process, such that the substrate temperature may be controllably higher than the prescribe implant temperature during the implant process.

Abstract translation: 提供了用于低温离子注入的技术以提高生产量。 在低温离子注入期间，可以在通过冷却过程将衬底温度降低到约为规定的植入温度之前开始植入工艺，并且可以开始加热过程以在植入过程完成之前增加衬底温度 。 此外，可以在植入过程的一个或多个部分期间执行一个或多个温度调节过程，使得在植入过程期间，衬底温度可以可控地高于处方植入物温度。

公开(公告)号：US08039374B2

公开(公告)日：2011-10-18

申请号：US12727573

申请日：2010-03-19

Applicant: John D. Pollock ,  Zhimin Wan ,  Erik Collart

Inventor： John D. Pollock ,  Zhimin Wan ,  Erik Collart

IPC: H01L21/425

CPC classification number: H01L21/265 ,  H01J2237/2001 ,  H01J2237/31701 ,  H01L21/67248 ,  Y10S438/905

Abstract: Techniques for low temperature ion implantation are provided to improve throughput. Specifically, the pressure of the backside gas may temporarily, continually or continuously increase before the starting of the implant process, such that the wafer may be quickly cooled down from room temperature to be essentially equal to the prescribed implant temperature. Further, after the vacuum venting process, the wafer may wait an extra time in the load lock chamber before the wafer is moved out the ion implanter, in order to allow the wafer temperature to reach a higher temperature quickly for minimizing water condensation on the wafer surface. Furthermore, to accurately monitor the wafer temperature during a period of changing wafer temperature, a non-contact type temperature measuring device may be used to monitor wafer temperature in a real time manner with minimized condensation.

Abstract translation: 提供了低温离子注入技术，以提高产量。 具体地说，在植入过程开始之前，背面气体的压力可以暂时地，持续地或连续增加，使得晶片可以从室温快速冷却到基本等于规定的植入温度。 此外，在真空排气过程之后，晶片可以在晶片移出离子注入机之前在加载锁定室中等待额外的时间，以便允许晶片温度快速达到更高的温度以使晶片上的水冷凝最小化 表面。 此外，为了在晶片温度变化期间精确地监视晶片温度，可以使用非接触型温度测量装置以最小化的冷凝实时监测晶片温度。

公开(公告)号：US07381977B2

公开(公告)日：2008-06-03

申请号：US11235754

申请日：2005-09-27

Applicant: John D. Pollock ,  John W. Vanderpot ,  Donald W. Berrian

Inventor： John D. Pollock ,  John W. Vanderpot ,  Donald W. Berrian

IPC: H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/244 ,  H01J2237/24405 ,  H01J2237/24507 ,  H01J2237/24528 ,  H01J2237/24542 ,  H01J2237/30477 ,  H01J2237/31703

Abstract: A system, method, and apparatus for determining a profile of an ion beam are provided. The apparatus comprises a measuring device positioned along a path of the ion beam, a drive mechanism, and a first plate rotatably coupled to the drive mechanism. The drive mechanism is operable to rotate the first plate about a first axis through a path of the ion beam, therein selectively blocking the ion beam from reaching the measuring device. The apparatus may comprise a second plate further rotatably coupled to the drive mechanism, wherein the drive mechanism is operable to rotate the second plate about the first axis through the path of the ion beam independently from the rotation of the first plate, therein further selectively blocking the ion beam from reaching the measuring device. The drive mechanism may further linearly translate first plate and/or second plate through the ion beam.

Abstract translation: 提供了一种用于确定离子束轮廓的系统，方法和装置。 该装置包括沿着离子束的路径定位的测量装置，驱动机构和可旋转地联接到驱动机构的第一板。 驱动机构可操作以使第一板围绕第一轴线旋转通过离子束的路径，其中选择性地阻挡离子束到达测量装置。 该装置可以包括进一步可旋转地联接到驱动机构的第二板，其中驱动机构可操作以独立于第一板的旋转使第二板围绕第一轴线旋转通过离子束的路径，其中进一步选择性地阻挡 离子束到达测量装置。 驱动机构可以进一步使第一板和/或第二板线性地平移通过离子束。

公开(公告)号：US07323695B2

公开(公告)日：2008-01-29

申请号：US11098878

申请日：2005-04-05

Applicant: John W. Vanderpot ,  John D. Pollock ,  Donald W. Berrian

Inventor： John W. Vanderpot ,  John D. Pollock ,  Donald W. Berrian

IPC: G01F23/00

CPC classification number: H01J37/20 ,  H01J37/3171 ,  H01J2237/0216 ,  H01J2237/20228 ,  H01J2237/20292 ,  H01J2237/31703 ,  H01L21/67069 ,  H01L21/67259 ,  H01L21/68764 ,  H01L21/68792

Abstract: A reciprocating drive system, method, and apparatus for scanning a workpiece are provided, wherein a motor comprising a rotor and stator operable to individually rotate about a first axis is operable to reciprocally translate the workpiece with respect to a stationary reference. A shaft rotatably driven by the rotor extends along the first axis, and a scan arm is operably coupled to the shaft, wherein the scan arm is operable to support the workpiece thereon. Cyclical counter rotations of the shaft by the motor are operable to rotate the scan arm, therein scanning the workpiece through the ion beam along a first scan path, wherein the stator acts as a reaction mass to the rotation of the rotor. A controller is further operable to control an electromagnetic force between the rotor and the stator, therein generally determining a rotational position of the rotor and the stator.

Abstract translation: 提供了一种用于扫描工件的往复驱动系统，方法和装置，其中包括可操作以围绕第一轴线单独旋转的转子和定子的马达可操作以相对于固定基准往复平移工件。 由转子可旋转地驱动的轴沿着第一轴线延伸，并且扫描臂可操作地联接到轴，其中扫描臂可操作以在其上支撑工件。 电动机的轴的周期性旋转可操作以旋转扫描臂，其中沿着第一扫描路径扫描工件穿过离子束，其中定子充当转子的旋转的反作用质量。 控制器还可操作以控制转子和定子之间的电磁力，其中通常确定转子和定子的旋转位置。

公开(公告)号：US07135691B2

公开(公告)日：2006-11-14

申请号：US11098942

申请日：2005-04-05

Applicant: John W. Vanderpot ,  John D. Pollock ,  Donald W. Berrian

Inventor： John W. Vanderpot ,  John D. Pollock ,  Donald W. Berrian

IPC: B65H1/00

CPC classification number: H01J37/20 ,  H01J37/3171 ,  H01J2237/0216 ,  H01J2237/20228 ,  H01J2237/20292 ,  H01J2237/31703 ,  H01L21/67069 ,  H01L21/67259 ,  H01L21/68764 ,  H01L21/68792

Abstract: A reciprocating drive system and apparatus for scanning a workpiece through an ion beam are provided, wherein a motor comprising a rotor and stator operable to individually rotate about a first axis is operable to reciprocally translate the workpiece with respect to the ion beam. A shaft rotatably driven by the rotor extends along the first axis, and a scan arm is operably coupled to the shaft, wherein the scan arm is operable to support the workpiece thereon. Cyclical counter rotations of the shaft by the motor are operable to rotate the scan arm, therein scanning the workpiece through the ion beam along a first scan path, wherein the stator acts as a reaction mass to the rotation of the rotor. A controller is further operable to control an electromagnetic force between the rotor and the stator, therein generally determining a rotational position of the rotor and the stator.

Abstract translation: 提供了一种用于通过离子束扫描工件的往复驱动系统和装置，其中包括可操作以围绕第一轴线单独旋转的转子和定子的马达可操作以相对于离子束往复平移工件。 由转子可旋转地驱动的轴沿着第一轴线延伸，并且扫描臂可操作地联接到轴，其中扫描臂可操作以在其上支撑工件。 电动机的轴的周期性旋转可操作以旋转扫描臂，其中沿着第一扫描路径扫描工件穿过离子束，其中定子充当转子的旋转的反作用质量。 控制器还可操作以控制转子和定子之间的电磁力，其中通常确定转子和定子的旋转位置。

公开(公告)号：US06921907B2

公开(公告)日：2005-07-26

申请号：US10889193

申请日：2004-07-12

Applicant: John W. Vanderpot ,  Donald W. Berrian ,  John D. Pollock

Inventor： John W. Vanderpot ,  Donald W. Berrian ,  John D. Pollock

IPC: G21K5/10 ,  H01J37/317 ,  H01L21/68 ,  H01L21/687 ,  H01J37/20

CPC classification number: H01L21/68764 ,  H01J37/3171 ,  H01J2237/20 ,  H01L21/68

Abstract: A substrate positioning system is provided to facilitate the performing of certain processing on the substrate, such as ion implantation. The system comprises a linkage rotatably mounted to a base and an end effector member rotatably mounted to the linkage and configured for receiving a substrate. Through the synchronized rotation of the linkage about the base and the end effector member about the linkage, the system acts as a robotic unit to move the substrate to the desired location for performing processing thereon. In another aspect, the base is movable along an axis such that the system maintains a constant distance of travel for an ion beam incident on the substrate as the linkage and end effector member travel in a curved path.

Abstract translation: 提供衬底定位系统以便于在衬底上执行某些处理，例如离子注入。 该系统包括可旋转地安装到基座的连接件和可旋转地安装到连杆机构并构造成用于接收基板的端部执行器部件。 通过围绕连杆机构围绕底座和端部执行器部件的联动的同步旋转，该系统充当机器人单元以将基板移动到期望的位置以在其上进行处理。 在另一方面，基座可以沿轴线移动，使得当连接件和端部执行器部件在弯曲的路径中行进时，系统保持入射到基板上的离子束的恒定的行进距离。

公开(公告)号：US06806479B1

公开(公告)日：2004-10-19

申请号：US10641219

申请日：2003-08-13

Applicant: Zhimin Wan ,  Jiong Chen ,  John D. Pollock

Inventor： Zhimin Wan ,  Jiong Chen ,  John D. Pollock

IPC: H01J3720

CPC classification number: H01J37/3171 ,  H01J37/20 ,  H01J2237/201 ,  H01J2237/20214

Abstract: A method to rotate individual pad of a batch disk to an implant angle and lock them in place, with the pad surface having conical or near conical surface to minimize the implant angle variation across a wafer on the pad for both tilt angle and twist angle, at large tilt angle implant. The implanter includes a disk with multiple attached pads that can hold substrates securely when the hub is at rest or rotates. The disk rotates around its spin axis, which moves laterally at a programmed speed profile so that all substrates on the hub can get evenly touched by the fixed ion beam. The pad rotation axis is at an angle with the disk spin axis, and the angle is preferable 90 degrees. The nominal of the pad surface is at an angle, i.e., a tilt angle, relative to the incident ion beam. A rotation mechanism is applied to each individual pad to rotate the pad to the desired tilt angle. A locking mechanism is applied to each individual pad assembly to lock the pad at the desired tilt angle with minimum angle variation under high centrifugal force during fast disk spin. The locking mechanism includes: a) add brake to the rotation mechanism in the pad assembly so that the pad cannot rotate due to mechanical friction force or lock-key. B) use motor to hold the pad assembly. The sum of the friction torque and the motor holding torque should be larger than the centrifugal torque. A torque balancing mechanism is applied to pad mechanical design to minimize the total pad rotation torque under centrifugal force during fast disk spin by adding mass to counter balance the original wafer pad mass.

Abstract translation: 一种将批盘的单个垫片旋转到植入角度并将其锁定在适当位置的方法，其中垫表面具有圆锥形或近圆锥形表面，以最小化用于倾斜角度和扭转角度的衬垫上的晶片上的植入角度变化， 在大倾角植入。 注入机包括具有多个附接垫的盘，当轮毂处于静止或转动时，该盘可以牢固地保持衬底。 磁盘围绕其旋转轴旋转，其以编程的速度轮廓横向移动，使得轮毂上的所有基底可以被固定的离子束均匀地接触。 衬垫旋转轴与盘旋转轴成一定角度，该角度优选为90度。 焊盘表面的标称是相对于入射离子束成一定角度，即倾斜角。 旋转机构被施加到每个单独的垫以将垫旋转到期望的倾斜角。 将锁定机构应用于每个单独的垫组件，以在快速盘旋转期间在高离心力下以最小的角度变化将垫锁定在期望的倾斜角度。 该锁定机构包括：a）向衬垫组件中的旋转机构添加制动器，使得垫片由于机械摩擦力或锁定键不能旋转。 B）使用马达来固定垫组件。 摩擦转矩和电机保持转矩的总和应大于离心力矩。 应用扭矩平衡机构进行垫片机械设计，以通过增加质量来平衡原始晶片垫块，从而在快速盘旋转期间在离心力下最小化总垫片旋转扭矩。

公开(公告)号：US06082297A

公开(公告)日：2000-07-04

申请号：US955346

申请日：1997-10-21

Applicant: John D. Pollock ,  John W. Vanderpot

Inventor： John D. Pollock ,  John W. Vanderpot

IPC: C23C14/54 ,  C23C16/46 ,  H01L21/00 ,  C23C16/00

CPC classification number: H01L21/67103 ,  C23C14/541 ,  C23C16/46 ,  H01J2237/2001

Abstract: An encapsulated heater heats a susceptor within a process module such as for use in CVD, PVD and etch. The heater includes an electrically resistive heating element, e.g., an Inconel trace, that is responsive to applied voltage to radiate heat. A hermetically-sealed HASTELLOY C-22 or stainless steel 304 housing enclosing the element. An inert gas is disposed within the housing at a prescribed pressure, e.g., 150 Torr, for transferring thermal energy from the element to the housing and for preventing oxidation of the heating element. The prescribed pressure reduces differential pressure between inside and outside of the housing while maintaining sufficient thermal conduction through the gas such that the housing radiates and conducts heat the susceptor. A feed-through within the housing can be used to connect the heating element to a voltage source while maintaining the hermetic seal of the housing. Preferably, the resistive element is surrounded with an insulator, e.g., mica, to electrically isolate the resistive element from the housing. A pinch-off tube facilitates injecting the gas within the housing and for sealing the gas therein. The heater is replaceable as a unit within the susceptor to facilitate the manufacturing process in the event of a heater failure.

Abstract translation: 封装的加热器加热处理模块内的基座，例如用于CVD，PVD和蚀刻。 加热器包括电阻加热元件，例如铬镍铁合金迹线，其响应于施加的电压以辐射热量。 密封的HASTELLOY C-22或不锈钢304外壳围绕元件。 惰性气体以规定的压力（例如150托）设置在壳体内，用于将热能从元件传递到壳体并防止加热元件的氧化。 规定的压力降低了壳体内部和外部之间的压差，同时保持通过气体的足够的热传导，使得壳体辐射并传导感受器的热量。 壳体内的馈通可用于将加热元件连接到电压源，同时保持壳体的气密密封。 优选地，电阻元件被诸如云母的绝缘体包围，以将电阻元件与壳体电隔离。 夹紧管有助于将气体注入壳体内并将气体密封在其中。 加热器可作为基座中的单元更换，以便在加热器故障的情况下促进制造过程。

公开(公告)号：US20110049383A1

公开(公告)日：2011-03-03

申请号：US12553946

申请日：2009-09-03

Applicant: ZHIMIN WAN ,  JOHN D. POLLOCK ,  DON BERRIAN

Inventor： ZHIMIN WAN ,  JOHN D. POLLOCK ,  DON BERRIAN

IPC: C23C14/48 ,  H01J27/02

CPC classification number: C23C14/48 ,  C23C14/04 ,  C23C14/50 ,  H01J37/09 ,  H01J37/3171 ,  H01J2237/0458 ,  H01J2237/1503 ,  H01J2237/20228 ,  H01J2237/30488

Abstract: An ion implanter and an ion implant method for achieving a two-dimensional implantation on a wafer are disclosed. The ion implanter includes an ion source, a mass analyzer, a wafer driving mechanism, an aperture mechanism, and an aperture driving mechanism. The ion source and the mass analyzer are capable of providing an ion beam. The wafer driving mechanism is configured to drive a wafer along only a first direction. The aperture mechanism has an aperture for filtering the ion beam before the wafer is implanted. The aperture driving mechanism is configured to drive the aperture along a second direction intersecting the first direction. By moving the wafer and the aperture along different directions separately, the projection of the ion beam can achieve a two-dimensional implantation on the wafer. Here, at least one of the directions is optionally parallel to the longer dimension of the two-dimensional cross-section of the ion beam.

Abstract translation: 公开了一种用于在晶片上实现二维注入的离子注入机和离子注入方法。 离子注入机包括离子源，质量分析器，晶片驱动机构，孔径机构和孔径驱动机构。 离子源和质量分析仪能够提供离子束。 晶片驱动机构构造成仅沿第一方向驱动晶片。 光圈机构具有用于在晶片植入之前对离子束进行过滤的孔。 孔径驱动机构构造成沿着与第一方向相交的第二方向驱动孔。 通过分别沿不同方向移动晶片和孔，离子束的投影可以在晶片上实现二维注入。 这里，至少一个方向可选地平行于离子束的二维横截面的较长尺寸。

公开(公告)号：US06777687B2

公开(公告)日：2004-08-17

申请号：US10153114

申请日：2002-05-21

Applicant: John W. Vanderpot ,  Donald W. Berrian ,  John D. Pollock

Inventor： John W. Vanderpot ,  Donald W. Berrian ,  John D. Pollock

IPC: H01J3720

CPC classification number: H01L21/68764 ,  H01J37/3171 ,  H01J2237/20 ,  H01L21/68

Abstract: A substrate positioning system is provided to facilitate the performing of certain processing on the substrate, such as ion implantation. The system comprises a linkage rotatably mounted to a base and an end effector member rotatably mounted to the linkage and configured for receiving a substrate. Through the synchronized rotation of the linkage about the base and the end effector member about the linkage, the system acts as a robotic unit to move the substrate to the desired location for performing processing thereon. In another aspect, the base is movable along an axis such that the system maintains a constant distance of travel for an ion beam incident on the substrate as the linkage and end effector member travel in a curved path.

Abstract translation: 提供衬底定位系统以便于在衬底上执行某些处理，例如离子注入。 该系统包括可旋转地安装到基座的连接件和可旋转地安装到连杆机构并构造成用于接收基板的端部执行器部件。 通过围绕连杆机构围绕底座和端部执行器部件的联动的同步旋转，该系统充当机器人单元以将基板移动到期望的位置以在其上进行处理。 在另一方面，基座可以沿轴线移动，使得当连接件和端部执行器部件在弯曲的路径中行进时，系统保持入射在基板上的离子束的恒定的行进距离。