公开(公告)号：US20160197198A1

公开(公告)日：2016-07-07

申请号：US14915704

申请日：2014-06-25

Applicant: JOLED INC.

Inventor： Eiji TAKEDA ,  Toru SAITO

IPC: H01L29/786 ,  H01L29/66 ,  G01R31/26 ,  H01L21/477 ,  H01L21/02 ,  G01R31/265 ,  H01L29/24 ,  H01L21/66

CPC classification number: H01L29/78693 ,  G01R31/2621 ,  G01R31/2642 ,  G01R31/2656 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/477 ,  H01L22/14 ,  H01L29/247 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78696

Abstract: A method of evaluating a thin-film transistor (TFT) which is disposed on a substrate, and includes at least: an oxide semiconductor layer which functions as a channel layer; and a channel protection layer disposed above the oxide semiconductor layer. The method includes: measuring a change in a reflectance of a microwave emitted to the oxide semiconductor layer while the oxide semiconductor layer is irradiated with excitation light by pulse irradiation; calculating a decay period which is a period of time taken for the reflectance to decay to 1/e or 1/e2, based on the change in the reflectance obtained in the measuring; and performing determination related to a threshold voltage of the oxide semiconductor layer, based on the decay period calculated in the calculating.

Abstract translation: 一种评估薄膜晶体管（TFT）的方法，其设置在基板上，并且至少包括：用作沟道层的氧化物半导体层; 以及设置在所述氧化物半导体层上方的沟道保护层。 该方法包括：通过脉冲照射来测量在氧化物半导体层被激发光照射时发射到氧化物半导体层的微波的反射率的变化; 基于测量中获得的反射率的变化，计算反射率衰减到1 / e或1 / e2所花费的时间段的衰减周期; 并且基于在计算中计算的衰减周期来执行与氧化物半导体层的阈值电压相关的确定。

公开(公告)号：US20170092710A1

公开(公告)日：2017-03-30

申请号：US15312183

申请日：2015-05-20

Applicant: JOLED INC.

Inventor： Yuuki ABE ,  Kazuhiro YOKOTA ,  Yasuharu SHINOKAWA ,  Kou SUGANO ,  Eiji TAKEDA

IPC: H01L27/32

CPC classification number: H01L27/3262 ,  H01L27/1225 ,  H01L27/3244 ,  H01L29/78606 ,  H01L29/78693 ,  H01L51/5206 ,  H01L51/5218 ,  H01L2227/323 ,  H01L2251/5315

Abstract: An organic EL element including: a TFT substrate having a TAOS-TFT; and an organic EL unit having a lower electrode. The lower electrode includes an aluminum containing metal layer, a transition metal containing oxide layer disposed between the aluminum containing metal layer and the TFT substrate, and an aluminum containing oxide layer disposed between the aluminum containing metal layer and the transition metal containing oxide layer and in contact with both the aluminum containing metal layer and the transition metal containing oxide layer. The aluminum containing oxide layer contains aluminum oxide. The transition metal containing oxide layer contains tungsten oxide and has a density of 6.5 g/cm3 or more.

公开(公告)号：US20160276492A1

公开(公告)日：2016-09-22

申请号：US15028966

申请日：2014-07-01

Applicant: JOLED INC.

Inventor： Eiji TAKEDA ,  Takahiro KAWASHIMA

IPC: H01L29/786 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L29/78696 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/0262 ,  H01L21/02631 ,  H01L27/3244 ,  H01L27/3262 ,  H01L29/66969 ,  H01L29/78693

Abstract: A method for producing a thin film transistor including an oxide semiconductor layer includes: depositing an oxide semiconductor film above a substrate by a sputtering method; and forming the oxide semiconductor layer into a predetermined shape by processing the oxide semiconductor film, wherein in the depositing of an oxide semiconductor film, a first oxide semiconductor film is deposited by using a first power density, and a second oxide semiconductor film is then deposited on the first oxide semiconductor film by using a second power density different from the first power density.

Abstract translation: 一种制造包括氧化物半导体层的薄膜晶体管的方法包括：通过溅射法在衬底上沉积氧化物半导体膜; 以及通过处理所述氧化物半导体膜将氧化物半导体层形成为预定形状，其中在沉积氧化物半导体膜时，通过使用第一功率密度沉积第一氧化物半导体膜，然后沉积第二氧化物半导体膜 通过使用与第一功率密度不同的第二功率密度在第一氧化物半导体膜上。