Abstract:
An organic EL element includes: a first electrode that is a metal layer; a transparent conductive layer containing indium zinc oxide; and a light-emitting layer, wherein the first electrode, the transparent conductive layer, and the light-emitting layer are stacked, and a ratio of zinc to indium in a vicinity of an interface of the transparent conductive layer is lower than or equal to 0.25, the interface being closer to the light-emitting layer.
Abstract:
Manufacturing method including forming, over substrate, TFT layer, planarization layer, and display element in this order. Forming of TFT layer involves forming passivation layer to cover TFT layer electrode, such as upper electrode, and to come in contact with planarizing layer. Forming of display element involves forming bottom electrode to come in contact with planarizing layer. TFT layer electrode and bottom electrode are connected by: first forming, in planarizing layer, first contact hole exposing passivation layer at bottom thereof; then forming second contact hole exposing TFT layer electrode at bottom thereof through dry-etching passivation layer exposed at bottom of first contact hole using fluorine-containing gas; then forming liquid repellent film containing fluorine on passivation layer inner surface facing second contact hole; and forming bottom electrode along planarizing layer inner surface and passivation layer inner surface respectively facing first contact hole and second contact hole.
Abstract:
An organic EL element including: a TFT substrate having a TAOS-TFT; and an organic EL unit having a lower electrode. The lower electrode includes an aluminum containing metal layer, a transition metal containing oxide layer disposed between the aluminum containing metal layer and the TFT substrate, and an aluminum containing oxide layer disposed between the aluminum containing metal layer and the transition metal containing oxide layer and in contact with both the aluminum containing metal layer and the transition metal containing oxide layer. The aluminum containing oxide layer contains aluminum oxide. The transition metal containing oxide layer contains tungsten oxide and has a density of 6.5 g/cm3 or more.
Abstract:
An electronic device including: a substrate; a first electrically-conductive layer; a second electrically-conductive layer; and an intermediate layer. The first electrically-conductive layer is disposed on the substrate and composed of aluminum or an aluminum alloy. The second electrically-conductive layer is spaced away from the first electrically-conductive layer. The intermediate layer is disposed between the first electrically-conductive layer and the second electrically-conductive layer, is in contact with both the first electrically-conductive layer and the second electrically-conductive layer, and contains aluminum and fluorine.
Abstract:
A method for manufacturing an organic light-emitting element, including: preparing a substrate; forming a light-reflective layer above the substrate, the light-reflective layer containing Al or an Al alloy; forming an alumina layer by oxidizing a part of the light-reflective layer; forming a metal layer on the alumina layer, the metal layer containing a metal having electrical conductivity regardless of whether or not the metal is oxidized; forming an electrically-conductive layer on the metal layer, the electrically-conductive layer containing a light-transmissive oxide; and forming an organic light-emitting layer and a light-transmissive electrode above the electrically-conductive layer.