公开(公告)号：US20190305064A1

公开(公告)日：2019-10-03

申请号：US16273156

申请日：2019-02-12

Applicant: JOLED INC.

Inventor： Tokuaki KUNIYOSHI ,  Naoki ASANO ,  Ryo KOSHIISHI ,  Hiroshi FUJIMURA

IPC: H01L27/32 ,  H01L29/786

Abstract: A semiconductor device includes a base, a first wiring line, a semiconductor film, a second wiring line, an insulating film, and a semiconductor auxiliary layer. The first wiring line is provided in the first, second, and third regions of the base. The semiconductor film has one or more low-resistance regions, is provided between the first wiring line and the base in the first region, and is in contact with the first wiring line in the second region. The second wiring line is in contact with the first wiring line in the third region. The insulating film is provided between the first wiring line and the semiconductor film in the first region. The semiconductor auxiliary layer is in contact with the semiconductor film at least in the first region, and assists electrical coupling via the first region.

公开(公告)号：US20180130910A1

公开(公告)日：2018-05-10

申请号：US15800604

申请日：2017-11-01

Applicant: JOLED INC.

Inventor： Toshiaki YOSHITANI ,  Hiroshi HAYASHI ,  Ryo KOSHIISHI

IPC: H01L29/786 ,  H01L27/32

CPC classification number: H01L29/78618 ,  H01L27/3262 ,  H01L27/3265 ,  H01L29/78696

Abstract: A thin-film transistor (TFT) substrate is provided which includes: a substrate; a TFT disposed above the substrate; and a capacitor disposed above the substrate and electrically connected with the TFT, wherein the capacitor includes: a lower electrode layer disposed above the substrate and including an electrically conductive material as a main component; an upper electrode layer disposed above and opposed to the lower electrode layer and including, as a main component, an oxide semiconductor material to which electrical conductivity is given; and a capacitor insulating layer disposed between the lower electrode layer and the upper electrode layer. An extension extending outward from at least a portion of the outer edge of the lower electrode layer in plan view is provided to the lower electrode layer. In plan view, the upper electrode layer covers the lower electrode layer except the extension.

公开(公告)号：US20200321469A1

公开(公告)日：2020-10-08

申请号：US16736813

申请日：2020-01-08

Applicant: JOLED INC.

Inventor： Hiroshi HAYASHI ,  Naoki ASANO ,  Ryo KOSHIISHI

IPC: H01L29/786 ,  H01L27/12 ,  H01L21/02 ,  H01L29/12

Abstract: A semiconductor device includes a gate electrode, a semiconductor film, and a conductive film. The semiconductor film includes an oxide semiconductor material. The semiconductor film includes a channel region, a low-resistance region, and an intermediate region. The channel region is opposed to the gate electrode. The low-resistance region has a lower electric resistance than the channel region. The intermediate region is provided between the low-resistance region and the channel region. The conductive film is provided selectively in contact with the low-resistance region of the semiconductor film.