公开(公告)号：US20190305064A1

公开(公告)日：2019-10-03

申请号：US16273156

申请日：2019-02-12

Applicant: JOLED INC.

Inventor： Tokuaki KUNIYOSHI ,  Naoki ASANO ,  Ryo KOSHIISHI ,  Hiroshi FUJIMURA

IPC: H01L27/32 ,  H01L29/786

Abstract: A semiconductor device includes a base, a first wiring line, a semiconductor film, a second wiring line, an insulating film, and a semiconductor auxiliary layer. The first wiring line is provided in the first, second, and third regions of the base. The semiconductor film has one or more low-resistance regions, is provided between the first wiring line and the base in the first region, and is in contact with the first wiring line in the second region. The second wiring line is in contact with the first wiring line in the third region. The insulating film is provided between the first wiring line and the semiconductor film in the first region. The semiconductor auxiliary layer is in contact with the semiconductor film at least in the first region, and assists electrical coupling via the first region.

公开(公告)号：US20190259878A1

公开(公告)日：2019-08-22

申请号：US16150278

申请日：2018-10-03

Applicant: JOLED INC.

Inventor： Naoki ASANO ,  Tokuaki KUNIYOSHI

IPC: H01L29/786 ,  G09G3/20 ,  H01L29/417 ,  H01L29/423

Abstract: A thin film transistor includes a substrate, a semiconductor layer, a first gate insulating film, a second gate insulating film, and a gate electrode. The semiconductor layer is provided in a selective region of the substrate. The first gate insulating film is provided in the selective region of the substrate and covers a surface of the semiconductor layer. The second gate insulating film extends across opposite sides of the first gate insulating film along a channel width direction and covers the first gate insulating film that covers the semiconductor layer. The gate electrode faces the semiconductor layer across the second gate insulating film.

公开(公告)号：US20180197884A1

公开(公告)日：2018-07-12

申请号：US15863009

申请日：2018-01-05

Applicant: JOLED INC.

Inventor： Hiroshi HAYASHI ,  Tokuaki KUNIYOSHI ,  Yasuhiro TERAI ,  Eri MATSUO ,  Toshiaki YOSHITANI ,  Naoki ASANO

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  H01L21/768 ,  H01L21/027

CPC classification number: H01L27/124 ,  H01L21/0273 ,  H01L21/76802 ,  H01L21/76877 ,  H01L21/76897 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/1262 ,  H01L27/1288 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/7869

Abstract: A semiconductor device includes a substrate, a first wiring line, a semiconductor film, a second wiring line, and an insulating film. The substrate includes first, second, and third regions provided adjacently in this order in a predetermined direction. The first wiring line is provided on the substrate and provided in each of the first, second, and third regions. The semiconductor film has a low-resistance region in at least a portion thereof. The semiconductor film is provided between the first wiring line and the substrate in the first region, and is in contact with the first wiring line in the second region. The second wiring line is provided at a position closer to the substrate than the semiconductor film, and is in contact with the first wiring line in the third region. The insulating film is provided between the first wiring line and the semiconductor film in the first region.