公开(公告)号：US20170186369A1

公开(公告)日：2017-06-29

申请号：US15304944

申请日：2014-12-22

Applicant: JOLED INC.

Inventor： Hiroshi HAYASHI ,  Shinya ONO

IPC: G09G3/3233

Abstract: A display device includes: a display unit in which light-emitting pixels are disposed in rows and columns; and a control circuit controlling the display unit. The light-emitting pixels each include: a light-emitting element (organic EL element); and a drive transistor which supplies the light-emitting element with a current causing the light-emitting element to emit light, and the control circuit, when display by the display unit is stopped, calculates an amount of shift of a threshold voltage of the drive transistor at a time when a stopped state of the display unit is started, and determines on the basis of the amount of shift, at least one of (i) a recovery voltage which reduces the amount of shift by being applied across a gate and source of the drive transistor while the display by the display unit is stopped, and (ii) an application period during which the recovery voltage is applied.

公开(公告)号：US20160254280A1

公开(公告)日：2016-09-01

申请号：US15030081

申请日：2014-07-17

Applicant: JOLED INC.

Inventor： Mami NONOGUCHI ,  Tomoaki IZUMI ,  Hiroshi HAYASHI ,  Yuji KISHIDA

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  H01L29/24

CPC classification number: H01L27/1225 ,  H01L27/127 ,  H01L27/3244 ,  H01L27/3262 ,  H01L29/247 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

Abstract: A thin-film transistor includes: an oxide semiconductor layer; an insulating layer formed above the oxide semiconductor layer; and a source electrode and a drain electrode which are located at least partially on the insulating layer and are connected to the oxide semiconductor layer via an opening formed in the insulating layer. The thin-film transistor satisfies a relational expression L1≧5.041 exp(5×10−18N), where L1 (μm) is one of protrusion widths of the oxide semiconductor layer in a channel width direction with respect to the source electrode or the drain electrode and N (cm−3) is a carrier density of the oxide semiconductor layer.

Abstract translation: 薄膜晶体管包括：氧化物半导体层; 形成在所述氧化物半导体层上方的绝缘层; 以及源电极和漏电极，其至少部分地位于绝缘层上，并且经由形成在绝缘层中的开口连接到氧化物半导体层。 薄膜晶体管满足关系式L1≥5.041exp（5×10-18N），其中L1（μm）是沟道宽度方向上的氧化物半导体层相对于源极或漏极的突出宽度之一 电极和N（cm-3）是氧化物半导体层的载流子密度。

公开(公告)号：US20190198532A1

公开(公告)日：2019-06-27

申请号：US16289662

申请日：2019-03-01

Applicant: JOLED INC.

Inventor： Hiroshi HAYASHI

IPC: H01L27/12 ,  G09F9/33 ,  H01L29/786 ,  H01L29/49 ,  H01L29/423 ,  H01L51/50 ,  H01L27/088 ,  H01L27/08 ,  H01L21/8234 ,  G09F9/30

Abstract: A display panel includes a substrate, a display element, a plurality of pixels arranged in a matrix, a drive circuit that drives the display element, a switching transistor in each of the plurality of pixels and selectively performs switching on the pixel that is to be caused to emit light, a first drive transistor in each of the plurality of pixels and drives a light-emitting element in the pixel, and a second drive transistor in the drive circuit. The switching transistor that is in each of the plurality of pixels, the first drive transistor that is in each of the plurality of pixels, and the second drive transistor in the drive circuit include oxide semiconductors. The switching transistor in each of the plurality of pixels and the second drive transistor in the drive circuit have a higher mobility than the first drive transistor in each of the plurality of pixels.

公开(公告)号：US20180130910A1

公开(公告)日：2018-05-10

申请号：US15800604

申请日：2017-11-01

Applicant: JOLED INC.

Inventor： Toshiaki YOSHITANI ,  Hiroshi HAYASHI ,  Ryo KOSHIISHI

IPC: H01L29/786 ,  H01L27/32

CPC classification number: H01L29/78618 ,  H01L27/3262 ,  H01L27/3265 ,  H01L29/78696

Abstract: A thin-film transistor (TFT) substrate is provided which includes: a substrate; a TFT disposed above the substrate; and a capacitor disposed above the substrate and electrically connected with the TFT, wherein the capacitor includes: a lower electrode layer disposed above the substrate and including an electrically conductive material as a main component; an upper electrode layer disposed above and opposed to the lower electrode layer and including, as a main component, an oxide semiconductor material to which electrical conductivity is given; and a capacitor insulating layer disposed between the lower electrode layer and the upper electrode layer. An extension extending outward from at least a portion of the outer edge of the lower electrode layer in plan view is provided to the lower electrode layer. In plan view, the upper electrode layer covers the lower electrode layer except the extension.

公开(公告)号：US20200279529A1

公开(公告)日：2020-09-03

申请号：US16877040

申请日：2020-05-18

Applicant: JOLED INC.

Inventor： Hiroshi HAYASHI ,  Shinya ONO

IPC: G09G3/3233

Abstract: A method for driving a display device includes stopping a display operation of a display based on a presence or absence of a signal indicating an off operation of a main power switch of the display. The method further includes applying a recovery voltage across a gate and source of a driving transistor in the display based on a threshold voltage shift of the driving transistor. The threshold voltage shift is determined during a stopped state of the display operation of the display. The stopped state of the display operation of the display occurs prior to starting the display operation of the display.

公开(公告)号：US20180197884A1

公开(公告)日：2018-07-12

申请号：US15863009

申请日：2018-01-05

Applicant: JOLED INC.

Inventor： Hiroshi HAYASHI ,  Tokuaki KUNIYOSHI ,  Yasuhiro TERAI ,  Eri MATSUO ,  Toshiaki YOSHITANI ,  Naoki ASANO

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  H01L21/768 ,  H01L21/027

CPC classification number: H01L27/124 ,  H01L21/0273 ,  H01L21/76802 ,  H01L21/76877 ,  H01L21/76897 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/1262 ,  H01L27/1288 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/7869

Abstract: A semiconductor device includes a substrate, a first wiring line, a semiconductor film, a second wiring line, and an insulating film. The substrate includes first, second, and third regions provided adjacently in this order in a predetermined direction. The first wiring line is provided on the substrate and provided in each of the first, second, and third regions. The semiconductor film has a low-resistance region in at least a portion thereof. The semiconductor film is provided between the first wiring line and the substrate in the first region, and is in contact with the first wiring line in the second region. The second wiring line is provided at a position closer to the substrate than the semiconductor film, and is in contact with the first wiring line in the third region. The insulating film is provided between the first wiring line and the semiconductor film in the first region.

公开(公告)号：US20170309649A1

公开(公告)日：2017-10-26

申请号：US15517509

申请日：2015-09-30

Applicant: JOLED INC.

Inventor： Hiroshi HAYASHI

IPC: H01L27/12 ,  G09F9/33 ,  H01L27/32

CPC classification number: H01L27/1225 ,  G09F9/30 ,  G09F9/33 ,  H01L21/8234 ,  H01L27/08 ,  H01L27/088 ,  H01L27/1222 ,  H01L27/1229 ,  H01L27/124 ,  H01L27/127 ,  H01L27/3262 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/78645 ,  H01L29/78696 ,  H01L51/50

Abstract: A thin film transistor substrate includes: a substrate; and a first thin film transistor and a second thin film transistor that are disposed on the substrate. The first thin film transistor includes a first gate electrode and a first oxide semiconductor layer that is used as a channel. The second thin film transistor includes a second gate electrode and a second oxide semiconductor layer that is used as a channel. The first oxide semiconductor layer includes a first oxide semiconductor material that is different in mobility from a second oxide semiconductor material that the second oxide semiconductor layer includes.

公开(公告)号：US20170287397A1

公开(公告)日：2017-10-05

申请号：US15507394

申请日：2015-08-27

Applicant: JOLED INC.

Inventor： Kazuki SAWA ,  Hiroshi HAYASHI ,  Tomoyuki MAEDA

IPC: G09G3/3233 ,  G09G3/20

CPC classification number: G09G3/3233 ,  G09G3/2007 ,  G09G5/363 ,  G09G2300/043 ,  G09G2320/0233 ,  G09G2360/16

Abstract: A display device correction method performed by a control unit that performs display control on an organic electroluminescent (EL) panel including a plurality of display pixels, in an organic EL display which includes the organic EL panel and the control unit. The display device correction method includes: obtaining a cumulative value of a pixel signal supplied to a drive transistor which is included in a current pixel to be processed among the plurality of display pixels and supplies drive current according to the pixel signal to an organic EL element (OEL); calculating a shift amount of a threshold voltage of the drive transistor, using the cumulative value; calculating an amount of change in mobility, using the shift amount; and calculating a correction parameter for correcting a pixel signal, using the amount of change in mobility.

公开(公告)号：US20200321469A1

公开(公告)日：2020-10-08

申请号：US16736813

申请日：2020-01-08

Applicant: JOLED INC.

Inventor： Hiroshi HAYASHI ,  Naoki ASANO ,  Ryo KOSHIISHI

IPC: H01L29/786 ,  H01L27/12 ,  H01L21/02 ,  H01L29/12

Abstract: A semiconductor device includes a gate electrode, a semiconductor film, and a conductive film. The semiconductor film includes an oxide semiconductor material. The semiconductor film includes a channel region, a low-resistance region, and an intermediate region. The channel region is opposed to the gate electrode. The low-resistance region has a lower electric resistance than the channel region. The intermediate region is provided between the low-resistance region and the channel region. The conductive film is provided selectively in contact with the low-resistance region of the semiconductor film.

公开(公告)号：US20170104103A1

公开(公告)日：2017-04-13

申请号：US15384622

申请日：2016-12-20

Applicant: JOLED INC. ,  PANASONIC LIQUID CRYSTAL DISPLAY CO., LTD

Inventor： Hiroshi HAYASHI ,  Takahiro KAWASHIMA ,  Genshirou KAWACHI

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/51 ,  H01L29/423 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L29/78609 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02675 ,  H01L27/1222 ,  H01L27/1274 ,  H01L27/3262 ,  H01L29/42384 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66765 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78669 ,  H01L29/78678 ,  H01L29/78696

Abstract: Methods of fabricating a thin-film transistor are provided. The methods include forming a gate electrode above a substrate, a gate insulating layer above the gate electrode, a non-crystalline silicon layer above the gate insulating layer, and a channel protective layer above the non-crystalline silicon layer. The non-crystalline silicon layer and the channel protective layer are processed to form a projecting part. The projecting part has an upper layer composed of the channel protective layer and a lower layer composed of the non-crystalline silicon layer. The projecting part and portions of the non-crystalline silicon layer on sides of the projecting part are irradiated with a laser beam to crystallize at least the non-crystalline silicon layer in the projecting part. An absorptance of the non-crystalline silicon layer for the laser beam is greater in the projecting part than in the portions on the sides of the projecting part.