公开(公告)号：US09780154B2

公开(公告)日：2017-10-03

申请号：US14638568

申请日：2015-03-04

Applicant: Joled Inc.

Inventor： Ayumu Sato ,  Takashi Maruyama ,  Takahide Ishii

IPC: H01L27/32 ,  H01L51/52

CPC classification number: H01L27/326 ,  H01L27/3202 ,  H01L27/3248 ,  H01L27/3272 ,  H01L51/5218 ,  H01L51/5253 ,  H01L2227/323 ,  H01L2251/568

Abstract: A display device of the present disclosure includes a plurality of pixels, in which a pixel includes a light-emitting element, a drive circuit which has a thin film transistor driving the light-emitting element, and a coupling unit which connects the light-emitting element and the drive circuit to each other, the light-emitting element has a configuration in which an organic layer including a light-emitting layer is interposed between a transparent electrode and a reflective electrode, the thin film transistor has a configuration which includes a semiconductor layer, an insulation layer, a first electrode layer, and a second electrode layer, and the coupling unit includes a metal layer which is thinner than the first electrode and the second electrode of the thin film transistor the metal layer being disposed in one portion of the coupling unit.

公开(公告)号：US11063109B2

公开(公告)日：2021-07-13

申请号：US16830289

申请日：2020-03-26

Applicant: JOLED INC.

Inventor： Atsuhito Murai ,  Yasuhiro Terai ,  Takashi Maruyama ,  Yoshihiro Oshima ,  Motohiro Toyota ,  Ryosuke Ebihara ,  Yasunobu Hiromasu

IPC: H01L27/32 ,  H01L51/52 ,  H01L29/417 ,  H01L29/423 ,  H01L29/786 ,  H01L27/12

Abstract: A display unit includes a first substrate, a transistor, first and second wiring layers, and an insulating film. The first substrate is provided with a display region and a peripheral region. The transistor is provided in the display region, and includes a semiconductor layer, a gate electrode facing the semiconductor layer, a gate insulating film between the gate electrode and the semiconductor layer, and a source-drain electrode electrically coupled to the semiconductor layer. The first wiring layer is provided in the peripheral region, electrically coupled to the transistor, and disposed closer to the first substrate than the same layer as the gate electrode and the source-drain electrode. The second wiring layer is provided on the first substrate and has an electric potential different from the first wiring layer. The insulating film is provided between the second wiring layer and the first wiring layer.

公开(公告)号：US11239371B2

公开(公告)日：2022-02-01

申请号：US16518437

申请日：2019-07-22

Applicant: JOLED INC.

Inventor： Yasuhiro Terai ,  Naoki Asano ,  Takashi Maruyama

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/66 ,  H01L21/02 ,  H01L29/45 ,  H01L21/027 ,  H01L21/465

Abstract: A semiconductor device includes a semiconductor film, an interlayer insulating film, a source-drain electrode, and a semiconductor auxiliary film. The semiconductor film includes an oxide semiconductor material and has a channel region and a low-resistance region. The low-resistance region has an electric resistance lower than an electric resistance of the channel region. The interlayer insulating film covers the semiconductor film and has a through-hole opposed to the low-resistance region. The source-drain electrode includes a source electrode and a drain electrode and is electrically coupled to the semiconductor film through the through-hole. The semiconductor auxiliary film is in contact with the low-resistance region of the semiconductor film, reduces an electric resistance of the semiconductor film, and has a first opening at least on a part of a portion opposed to the through-hole.