Active matrix substrate method of manufacturing active matrix substrate, and display device

    公开(公告)号:US10551704B2

    公开(公告)日:2020-02-04

    申请号:US15615834

    申请日:2017-06-07

    Applicant: JOLED INC.

    Abstract: Provided is an active matrix substrate that includes a substrate, a thin film transistor, an electrode layer, and a second insulating film. The thin film transistor is provided on the substrate and includes an oxide semiconductor layer, a gate electrode, and source and drain electrodes. The oxide semiconductor layer includes a first region as a channel region. The electrode layer is level with the gate electrode, is provided in a different region from the thin film transistor, and includes a first end. The second insulating film is provided between the substrate and the electrode layer and includes a second end at a more retreated position than the first end of the electrode layer. The oxide semiconductor layer further includes a second region having lower resistance than the first region. The electrode layer is electrically coupled, at the first end, to the second region of the oxide semiconductor layer.

    Display unit
    2.
    发明授权

    公开(公告)号:US11063109B2

    公开(公告)日:2021-07-13

    申请号:US16830289

    申请日:2020-03-26

    Applicant: JOLED INC.

    Abstract: A display unit includes a first substrate, a transistor, first and second wiring layers, and an insulating film. The first substrate is provided with a display region and a peripheral region. The transistor is provided in the display region, and includes a semiconductor layer, a gate electrode facing the semiconductor layer, a gate insulating film between the gate electrode and the semiconductor layer, and a source-drain electrode electrically coupled to the semiconductor layer. The first wiring layer is provided in the peripheral region, electrically coupled to the transistor, and disposed closer to the first substrate than the same layer as the gate electrode and the source-drain electrode. The second wiring layer is provided on the first substrate and has an electric potential different from the first wiring layer. The insulating film is provided between the second wiring layer and the first wiring layer.

    Semiconductor device and active matrix substrate using semiconductor device

    公开(公告)号:US10109650B2

    公开(公告)日:2018-10-23

    申请号:US15466827

    申请日:2017-03-22

    Applicant: JOLED Inc.

    Abstract: According to one embodiment, a semiconductor device includes an insulating substrate including a pixel area and a peripheral circuit area around the pixel area, a first insulating layer which is provided on the insulating substrate and includes at least nitrogen, a second insulating layer at least provided on the first insulating layer of the peripheral circuit area, a first thin-film transistor which is provided above the first insulating layer of the pixel area and includes a first oxide semiconductor layer, and a second thin-film transistor which is provided on the second insulating layer of the peripheral circuit area and includes a second oxide semiconductor layer. The second insulating layer in the pixel area is thinner than that in the peripheral circuit area.

    Organic EL display panel
    4.
    发明授权

    公开(公告)号:US10749134B2

    公开(公告)日:2020-08-18

    申请号:US16384424

    申请日:2019-04-15

    Applicant: JOLED INC.

    Abstract: The pixels of an organic EL display panel each include an anode electrode layer, an organic layer, and a cathode electrode layer. Each of the organic layer and the cathode electrode layer is shared by the plurality of pixels. An organic EL element in each of the pixels includes an anode section, a cathode section, and a light emitting section. A conductor layer having a recess is provided in a region outside a region of the organic EL element in a view from a light exiting direction in which the organic EL element emits light. The recess includes a coated section that is covered with the organic layer and a conductor exposed section where the conductor layer is exposed. The cathode electrode layer is connected to part of the conductor exposed section.

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