公开(公告)号：US20240254365A1

公开(公告)日：2024-08-01

申请号：US18577266

申请日：2022-08-01

Applicant: JSR CORPORATION

Inventor： Koki Ishimaki ,  Shuhei Nakamura ,  Yasutaka Kamei ,  Kohei Nishimura

IPC: C09G1/02 ,  H01L21/321 ,  H01L21/768

CPC classification number: C09G1/02 ,  H01L21/3212 ,  H01L21/7684

Abstract: The present invention provides a chemical mechanical polishing composition with which it is possible to suppress ruthenium corrosion and also perform chemical mechanical polishing of a semiconductor substrate containing ruthenium while maintaining a stable polishing speed. The composition for chemical mechanical polishing of the present invention contains: (A) abrasive grains; (B) an acid containing at least one anion selected from the group consisting of periodate ions (IO4−), hypochlorite ions (CIO−), chlorite ions (CIO2−) and hypobromite ions (BrO−) or a salt of said acid; and (C) hydrogen peroxide. MB/MC=0.015 to 11, where MB (mol/L) is the amount of the (B) acid or salt thereof and MC (mol/L) is the amount of hydrogen peroxide (C).