公开(公告)号：US12104087B2

公开(公告)日：2024-10-01

申请号：US17775887

申请日：2020-10-12

Applicant: JSR CORPORATION

Inventor： Yuuya Yamada ,  Pengyu Wang ,  Norihiko Sugie ,  Yasutaka Kamei

IPC: C09G1/02 ,  C09K3/14 ,  C09K13/00 ,  H01L21/321 ,  H01L21/768

CPC classification number: C09G1/02 ,  C09K3/1436 ,  C09K13/00 ,  H01L21/3212 ,  H01L21/7684

Abstract: Provided are a chemical-mechanical polishing composition and a chemical-mechanical polishing method capable of polishing a semiconductor substrate containing a conductive metal such as tungsten or cobalt flatly and at high speed as well as reducing surface defects after polishing. The composition for chemical-mechanical polishing contains (A) silica particles having a functional group represented by general formula (1) and (B) a silane compound. —COO-M+ . . . (1) (M+ represents a monovalent cation.)

公开(公告)号：US10304694B2

公开(公告)日：2019-05-28

申请号：US15608176

申请日：2017-05-30

Applicant: JSR CORPORATION

Inventor： Takahiro Hayama ,  Yasutaka Kamei ,  Naoki Nishiguchi ,  Satoshi Kamo ,  Tomotaka Shinoda

IPC: H01L21/321 ,  H01L21/306 ,  B24B37/04 ,  B24B49/16

Abstract: A semiconductor treatment composition includes potassium, sodium, and a compound A represented by the formula (1), and has a potassium content MK (ppm) and a sodium content MNa (ppm) that satisfy MK/MNa=1×10−1 to 1×104.

公开(公告)号：US20220389279A1

公开(公告)日：2022-12-08

申请号：US17775887

申请日：2020-10-12

Applicant: JSR CORPORATION

Inventor： Yuuya Yamada ,  Pengyu Wang ,  Norihiko Sugie ,  Yasutaka Kamei

IPC: C09G1/02 ,  C09K13/00 ,  C09K3/14

Abstract: Provided are a chemical-mechanical polishing composition and a chemical-mechanical polishing method capable of polishing a semiconductor substrate containing a conductive metal such as tungsten or cobalt flatly and at high speed as well as reducing surface defects after polishing. The composition for chemical-mechanical polishing contains (A) silica particles having a functional group represented by general formula (1) and (B) a silane compound. —COO-M+ . . . (1) (M+ represents a monovalent cation.)

公开(公告)号：US10319605B2

公开(公告)日：2019-06-11

申请号：US15584168

申请日：2017-05-02

Applicant: JSR Corporation

Inventor： Yasutaka Kamei ,  Takahiro Hayama ,  Naoki Nishiguchi ,  Satoshi Kamo ,  Tomotaka Shinoda

IPC: H01L21/321 ,  C09G1/04 ,  C09G1/00 ,  C09G1/06 ,  C09K13/06 ,  C09G1/02 ,  C09K3/14 ,  B24B1/00 ,  B24B37/04 ,  H01L21/306 ,  H01L21/02 ,  C11D3/14 ,  C11D7/20 ,  C11D11/00

Abstract: A semiconductor treatment composition includes particles having a particle size of 0.1 to 0.3 micrometers in a number of 3×101 to 1.5×103 per mL.

公开(公告)号：US20240254365A1

公开(公告)日：2024-08-01

申请号：US18577266

申请日：2022-08-01

Applicant: JSR CORPORATION

Inventor： Koki Ishimaki ,  Shuhei Nakamura ,  Yasutaka Kamei ,  Kohei Nishimura

IPC: C09G1/02 ,  H01L21/321 ,  H01L21/768

CPC classification number: C09G1/02 ,  H01L21/3212 ,  H01L21/7684

Abstract: The present invention provides a chemical mechanical polishing composition with which it is possible to suppress ruthenium corrosion and also perform chemical mechanical polishing of a semiconductor substrate containing ruthenium while maintaining a stable polishing speed. The composition for chemical mechanical polishing of the present invention contains: (A) abrasive grains; (B) an acid containing at least one anion selected from the group consisting of periodate ions (IO4−), hypochlorite ions (CIO−), chlorite ions (CIO2−) and hypobromite ions (BrO−) or a salt of said acid; and (C) hydrogen peroxide. MB/MC=0.015 to 11, where MB (mol/L) is the amount of the (B) acid or salt thereof and MC (mol/L) is the amount of hydrogen peroxide (C).

公开(公告)号：US09920287B2

公开(公告)日：2018-03-20

申请号：US14714526

申请日：2015-05-18

Applicant: JSR Corporation

Inventor： Takahiro Hayama ,  Megumi Arakawa ,  Yuki Kushida ,  Kiyotaka Mitsumoto ,  Yasutaka Kamei ,  Masahiro Noda ,  Tatsuya Yamanaka

IPC: C11D7/32 ,  C11D11/00 ,  C11D3/36 ,  C11D3/34 ,  C11D3/20 ,  C11D3/30 ,  C11D3/33 ,  C11D3/37 ,  C11D1/37 ,  C11D7/26 ,  C11D7/34 ,  C11D7/36 ,  C11D1/14

CPC classification number: C11D11/0047 ,  C11D1/146 ,  C11D1/37 ,  C11D3/2075 ,  C11D3/2082 ,  C11D3/30 ,  C11D3/33 ,  C11D3/3409 ,  C11D3/36 ,  C11D3/361 ,  C11D3/3707 ,  C11D3/3757 ,  C11D7/265 ,  C11D7/3209 ,  C11D7/3218 ,  C11D7/34 ,  C11D7/36

Abstract: A cleaning composition includes (A) at least one compound selected from the group consisting of a fatty acid that includes a hydrocarbon group having 8 to 20 carbon atoms, a phosphonic acid that includes a hydrocarbon group having 3 to 20 carbon atoms, a sulfuric acid ester that includes a hydrocarbon group having 3 to 20 carbon atoms, an alkenylsuccinic acid that includes a hydrocarbon group having 3 to 20 carbon atoms, and salts thereof, (B) an organic acid, (C) a water-soluble amine, (D) a water-soluble polymer, and an aqueous medium, the cleaning composition having a pH of 9 or more.

公开(公告)号：US20170330763A1

公开(公告)日：2017-11-16

申请号：US15584168

申请日：2017-05-02

Applicant: JSR Corporation

Inventor： Yasutaka Kamei ,  Takahiro Hayama ,  Naoki Nishiguchi ,  Satoshi Kamo ,  Tomotaka Shinoda

IPC: H01L21/321 ,  H01L21/302 ,  H01L21/02 ,  H01L21/306 ,  H01L21/304

CPC classification number: H01L21/3212 ,  B24B1/00 ,  B24B37/044 ,  C09G1/00 ,  C09G1/02 ,  C09G1/04 ,  C09G1/06 ,  C09K3/1454 ,  C09K3/1463 ,  C09K13/06 ,  C11D3/14 ,  C11D7/20 ,  C11D11/0047 ,  H01L21/02074 ,  H01L21/30625

Abstract: A semiconductor treatment composition includes particles having a particle size of 0.1 to 0.3 micrometers in a number of 3×101 to 1.5×103 per mL.