公开(公告)号：US20230203344A1

公开(公告)日：2023-06-29

申请号：US17927899

申请日：2021-05-21

Applicant: JSR CORPORATION

Inventor： Yuuya Yamada ,  Kouhei Yoshio

IPC: C09G1/02 ,  H01L21/3105 ,  H01L21/304

CPC classification number: C09G1/02 ,  H01L21/31053 ,  H01L21/304

Abstract: A composition for chemical mechanical polishing and a polishing method allow a semiconductor substrate containing at least one of a polysilicon film and a silicon nitride film to be polished at a high speed, while being capable of reducing the incidence of surface defects in the polished surface. The composition for chemical mechanical polishing contains (A) abrasive grains having plural protrusions on their surfaces and (B) a liquid medium, wherein the absolute value of the zeta-potential of the component (A) in the composition for chemical mechanical polishing is 10 mV or more.