公开(公告)号：US20230220240A1

公开(公告)日：2023-07-13

申请号：US17928279

申请日：2021-05-25

Applicant: JSR CORPORATION

Inventor： Takanori Yanagi ,  Pengyu Wang ,  Kouji Nakanishi ,  Yuuya Yamada ,  Atsushi Baba

IPC: C09G1/02 ,  H01L21/306 ,  C09K3/14

CPC classification number: C09G1/02 ,  H01L21/30625 ,  C09K3/1409

Abstract: Provided are abrasive grains and a composition for chemical mechanical polishing which are for selectively polishing a silicon nitride film, and which are applicable not only to silicon oxide films but also to amorphous silicon films and polysilicon films. This method for manufacturing abrasive grains includes: a first step of heating a mixture which contains particles having a sulfanyl group (—SH) fixed to the surface thereof via covalent bonds, and which contains a compound having carbon-carbon unsaturated double bonds; and a second step, which is performed after the first step, of further adding a peroxide and carrying out heating.

公开(公告)号：US12104087B2

公开(公告)日：2024-10-01

申请号：US17775887

申请日：2020-10-12

Applicant: JSR CORPORATION

Inventor： Yuuya Yamada ,  Pengyu Wang ,  Norihiko Sugie ,  Yasutaka Kamei

IPC: C09G1/02 ,  C09K3/14 ,  C09K13/00 ,  H01L21/321 ,  H01L21/768

CPC classification number: C09G1/02 ,  C09K3/1436 ,  C09K13/00 ,  H01L21/3212 ,  H01L21/7684

Abstract: Provided are a chemical-mechanical polishing composition and a chemical-mechanical polishing method capable of polishing a semiconductor substrate containing a conductive metal such as tungsten or cobalt flatly and at high speed as well as reducing surface defects after polishing. The composition for chemical-mechanical polishing contains (A) silica particles having a functional group represented by general formula (1) and (B) a silane compound. —COO-M+ . . . (1) (M+ represents a monovalent cation.)

公开(公告)号：US20230203344A1

公开(公告)日：2023-06-29

申请号：US17927899

申请日：2021-05-21

Applicant: JSR CORPORATION

Inventor： Yuuya Yamada ,  Kouhei Yoshio

IPC: C09G1/02 ,  H01L21/3105 ,  H01L21/304

CPC classification number: C09G1/02 ,  H01L21/31053 ,  H01L21/304

Abstract: A composition for chemical mechanical polishing and a polishing method allow a semiconductor substrate containing at least one of a polysilicon film and a silicon nitride film to be polished at a high speed, while being capable of reducing the incidence of surface defects in the polished surface. The composition for chemical mechanical polishing contains (A) abrasive grains having plural protrusions on their surfaces and (B) a liquid medium, wherein the absolute value of the zeta-potential of the component (A) in the composition for chemical mechanical polishing is 10 mV or more.

公开(公告)号：US20230002640A1

公开(公告)日：2023-01-05

申请号：US17781712

申请日：2020-11-17

Applicant: JSR CORPORATION

Inventor： Kouhei Nishimura ,  Yuuya Yamada ,  Shuuhei Nakamura ,  Pengyu Wang

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/321 ,  H01L21/3105

Abstract: Provided are a composition for chemical mechanical polishing and a method for polishing allowing a tungsten film- or silicon nitride film-containing semiconductor substrate to be polished at a high speed, while also enabling a reduction in the occurrence of a surface defect in the polished face after polishing. A composition for chemical mechanical polishing according to the present invention comprises (A) abrasive grains containing titanium nitride and (B) a liquid medium, wherein the absolute value of the zeta-potential of said (A) component in the composition for chemical mechanical polishing is 8 mV or higher.

公开(公告)号：US20220389279A1

公开(公告)日：2022-12-08

申请号：US17775887

申请日：2020-10-12

Applicant: JSR CORPORATION

Inventor： Yuuya Yamada ,  Pengyu Wang ,  Norihiko Sugie ,  Yasutaka Kamei

IPC: C09G1/02 ,  C09K13/00 ,  C09K3/14

Abstract: Provided are a chemical-mechanical polishing composition and a chemical-mechanical polishing method capable of polishing a semiconductor substrate containing a conductive metal such as tungsten or cobalt flatly and at high speed as well as reducing surface defects after polishing. The composition for chemical-mechanical polishing contains (A) silica particles having a functional group represented by general formula (1) and (B) a silane compound. —COO-M+ . . . (1) (M+ represents a monovalent cation.)