公开(公告)号：US20130098870A1

公开(公告)日：2013-04-25

申请号：US13630207

申请日：2012-09-28

Applicant: JSR CORPORATION

Inventor： Goji WAKAMATSU ,  Hayato NAMAI ,  Syun AOKI

IPC: B44C1/22

CPC classification number: B44C1/227 ,  G03F7/00 ,  G03F7/091 ,  G03F7/094 ,  H01L21/00 ,  Y10S430/118

Abstract: A method for forming a pattern includes providing a composition to form a resist underlayer film on a surface of a substrate to be processed. The composition contains a calixarene based compound having a group represented by a following formula (i) bound to at least a part of an aromatic ring or at least a part of a heteroaromatic ring of the calixarene based compound. The resist underlayer film on the surface of the substrate is treated with heat or an acid. A resist pattern is formed on a surface of the resist underlayer film. The resist underlayer film and the substrate are etched using the resist pattern as a mask to form the pattern on the substrate. The dry-etched resist underlayer film is removed from the substrate with a basic solution. —O—R1  (i)

Abstract translation: 形成图案的方法包括提供组合物以在待加工基材的表面上形成抗蚀剂下层膜。 组合物含有具有由下式（i）表示的基团的杯芳烃基化合物，其结合至杯芳烃基化合物的至少一部分芳族环或至少一部分杂芳环。 用热或酸处理衬底表面上的抗蚀剂下层膜。 抗蚀剂图案形成在抗蚀剂下层膜的表面上。 使用抗蚀剂图案作为掩模蚀刻抗蚀剂下层膜和基板以在基板上形成图案。 用基本溶液从基板上除去干蚀刻的抗蚀剂下层膜。 -O-R1（i）