METHOD FOR FORMING PATTERN
    3.
    发明申请
    METHOD FOR FORMING PATTERN 有权
    形成图案的方法

    公开(公告)号:US20130098870A1

    公开(公告)日:2013-04-25

    申请号:US13630207

    申请日:2012-09-28

    Abstract: A method for forming a pattern includes providing a composition to form a resist underlayer film on a surface of a substrate to be processed. The composition contains a calixarene based compound having a group represented by a following formula (i) bound to at least a part of an aromatic ring or at least a part of a heteroaromatic ring of the calixarene based compound. The resist underlayer film on the surface of the substrate is treated with heat or an acid. A resist pattern is formed on a surface of the resist underlayer film. The resist underlayer film and the substrate are etched using the resist pattern as a mask to form the pattern on the substrate. The dry-etched resist underlayer film is removed from the substrate with a basic solution. —O—R1  (i)

    Abstract translation: 形成图案的方法包括提供组合物以在待加工基材的表面上形成抗蚀剂下层膜。 组合物含有具有由下式(i)表示的基团的杯芳烃基化合物,其结合至杯芳烃基化合物的至少一部分芳族环或至少一部分杂芳环。 用热或酸处理衬底表面上的抗蚀剂下层膜。 抗蚀剂图案形成在抗蚀剂下层膜的表面上。 使用抗蚀剂图案作为掩模蚀刻抗蚀剂下层膜和基板以在基板上形成图案。 用基本溶液从基板上除去干蚀刻的抗蚀剂下层膜。 -O-R1(i)

    RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST PATTERN-FORMING METHOD
    4.
    发明申请
    RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST PATTERN-FORMING METHOD 有权
    辐射敏感树脂组合物和抗蚀剂图案形成方法

    公开(公告)号:US20150093703A1

    公开(公告)日:2015-04-02

    申请号:US14502024

    申请日:2014-09-30

    Abstract: The present invention relates to a radiation-sensitive resin composition that contains: a compound that has a structure represented by the following formula (1); a first polymer that includes a fluorine atom; and a solvent. In the following formula (1), X represents a carbonyl group, a sulfonyl group or a single bond. Y+ represents a monovalent radiation-degradable onium cation. The first polymer preferably has at least one selected from the group consisting of a structural unit represented by the following formula (2a) and a structural unit represented by the following formula (2b). The first polymer preferably includes an alkali-labile group. The first polymer preferably includes an acid-labile group. It is preferred that a radiation-sensitive acid generator is further contained.

    Abstract translation: 本发明涉及具有下述式(1)所示结构的化合物的放射线敏感性树脂组合物。 包含氟原子的第一聚合物; 和溶剂。 在下式(1)中,X表示羰基,磺酰基或单键。 Y +表示一价可辐射降解的鎓阳离子。 第一聚合物优选具有选自由下式(2a)表示的结构单元和由下式(2b)表示的结构单元组成的组中的至少一种。 第一聚合物优选包括碱不稳定基团。 第一聚合物优选包含酸不稳定基团。 进一步含有辐射敏感性酸发生剂是优选的。

    PHOTORESIST COMPOSITION, RESIST PATTERN-FORMING METHOD, COMPOUND, ACID GENERATING AGENT, AND PHOTODEGRADABLE BASE
    5.
    发明申请
    PHOTORESIST COMPOSITION, RESIST PATTERN-FORMING METHOD, COMPOUND, ACID GENERATING AGENT, AND PHOTODEGRADABLE BASE 有权
    光电组合物,耐光图案形成方法,化合物,酸产生剂和可光控基

    公开(公告)号:US20140363769A1

    公开(公告)日:2014-12-11

    申请号:US14470108

    申请日:2014-08-27

    Abstract: A photoresist composition containing a polymer having a structural unit including an acid-labile group, and a compound represented by the formula (1). In the formula (1), R1 represents a hydrogen atom or a monovalent acid-labile group. R2 represents an alicyclic hydrocarbon group having 3 to 20 carbon atoms and a valency of (m+1). m is an integer of 2 to 5. R3 and R4 each independently represent a hydrogen atom, a fluorine atom, a monovalent hydrocarbon group having 1 to 20 carbon atoms or a monovalent fluorinated hydrocarbon group having 1 to 20 carbon atoms. n is an integer of 0 to 5. At least two of a plurality of R1 s optionally taken together represent a ring structure, together with a plurality of oxygen atoms bonding to R1 and the carbon atom(s) constituting R2 and bonding to these oxygen atoms. M+ represents a monovalent radiation-degradable onium cation.

    Abstract translation: 一种含有具有包含酸不稳定基团的结构单元的聚合物和由式(1)表示的化合物的光致抗蚀剂组合物。 在式(1)中,R 1表示氢原子或一价酸不稳定基团。 R 2表示碳原子数3〜20的脂环式烃基,(m + 1)价。 m为2〜5的整数.R 3和R 4各自独立地表示氢原子,氟原子,碳原子数1〜20的一价烃基或碳原子数1〜20的1价氟代烃基。 n是0至5的整数。任选地并入多个R 1中的至少两个表示环结构,以及与R1结合的多个氧原子和构成R 2的碳原子并键合到这些氧上 原子 M +表示一价可辐射降解的鎓阳离子。

    RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST PATTERN-FORMING METHOD
    8.
    发明申请
    RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST PATTERN-FORMING METHOD 有权
    辐射敏感树脂组合物和抗蚀剂图案形成方法

    公开(公告)号:US20160202608A1

    公开(公告)日:2016-07-14

    申请号:US15079753

    申请日:2016-03-24

    Inventor: Hayato NAMAI

    Abstract: A radiation-sensitive resin composition comprises: a polymer, and a radiation-sensitive acid generator. The polymer comprises a structural unit comprising: an acid-labile group; and an oxoacid group or phenolic hydroxyl group protected by the acid-labile group. The acid-labile group is represented by formula (1). R1 and R2 each independently represent a divalent organic group having 1 to 20 carbon atoms. R3 represents a monovalent group having 1 to 40 atoms and having at least one selected from the group consisting of an oxygen atom, a sulfur atom and a nitrogen atom. * denotes a binding site to the oxy group in the oxoacid group or phenolic hydroxyl group protected.

    Abstract translation: 辐射敏感性树脂组合物包括:聚合物和辐射敏感性酸产生剂。 聚合物包括结构单元,其包含:酸不稳定基团; 和由酸不稳定基团保护的含氧酸基或酚羟基。 酸不稳定基团由式(1)表示。 R 1和R 2各自独立地表示碳原子数为1〜20的二价有机基团。 R 3表示具有1〜40个原子且具有选自氧原子,硫原子和氮原子中的至少1种的一价基团。 *表示与含氧酸基中的氧基或酚羟基保护的结合位点。

    RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND COMPOUND

    公开(公告)号:US20230244143A9

    公开(公告)日:2023-08-03

    申请号:US17854048

    申请日:2022-06-30

    CPC classification number: G03F7/0392 C08G75/20

    Abstract: A radiation-sensitive resin composition includes: a polymer including a structural unit including an acid-labile group; and a compound represented by formula (1). R1, R2, and R3 each independently represent a halogen atom, a hydroxy group, a nitro group, or a monovalent organic group having 1 to 20 carbon atoms; X1, X2, and X3 each independently represent a group represented by formula (2); a sum of d, e, and f is no less than 1; R4 represents a hydrocarbon group having 1 to 20 carbon atoms and R5 represents a hydrocarbon group having 1 to 20 carbon atoms, or R4 and R5 taken together represent a heterocyclic structure having 4 to 20 ring atoms, together with the sulfur atom to which R4 and R5 bond; n is 0 or 1; A− represents a monovalent sulfonic acid anion; and Y represents —COO—, —OCO—, or —N(R7)CO—.

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