公开(公告)号：US08883023B2

公开(公告)日：2014-11-11

申请号：US13630207

申请日：2012-09-28

申请人： JSR Corporation

发明人： Goji Wakamatsu ,  Hayato Namai ,  Syun Aoki

IPC分类号： C03C15/00 ,  G03F7/00 ,  B44C1/22 ,  H01L21/00 ,  G03F7/09

CPC分类号： B44C1/227 ,  G03F7/00 ,  G03F7/091 ,  G03F7/094 ,  H01L21/00 ,  Y10S430/118

摘要： A method for forming a pattern includes providing a composition to form a resist underlayer film on a surface of a substrate to be processed. The composition contains a calixarene based compound having a group represented by a following formula (i) bound to at least a part of an aromatic ring or at least a part of a heteroaromatic ring of the calixarene based compound. The resist underlayer film on the surface of the substrate is treated with heat or an acid. A resist pattern is formed on a surface of the resist underlayer film. The resist underlayer film and the substrate are etched using the resist pattern as a mask to form the pattern on the substrate. The dry-etched resist underlayer film is removed from the substrate with a basic solution. —O—R1  (i)

摘要翻译： 形成图案的方法包括提供组合物以在待加工基材的表面上形成抗蚀剂下层膜。 组合物含有具有由下式（i）表示的基团的杯芳烃基化合物，其结合至杯芳烃基化合物的至少一部分芳族环或至少一部分杂芳环。 用热或酸处理衬底表面上的抗蚀剂下层膜。 抗蚀剂图案形成在抗蚀剂下层膜的表面上。 使用抗蚀剂图案作为掩模蚀刻抗蚀剂下层膜和基板以在基板上形成图案。 用基本溶液从基板上除去干蚀刻的抗蚀剂下层膜。 -O-R1（i）

公开(公告)号：US07977029B2

公开(公告)日：2011-07-12

申请号：US12178493

申请日：2008-07-24

申请人： Toru Fujimori

发明人： Toru Fujimori

IPC分类号： G03F7/039

CPC分类号： G03F7/0395 ,  G03F7/0045 ,  G03F7/0397 ,  Y10S430/106 ,  Y10S430/111 ,  Y10S430/115 ,  Y10S430/118 ,  Y10S430/12 ,  Y10S430/121

摘要： A positive photosensitive composition comprising (A) an acid generator that generates an acid upon irradiation of an actinic ray or radiation, (B) a resin that has a monocyclic or polycyclic alicyclic hydrocarbon structure and is decomposed by the action of an acid to increase solubility in an alkali developing solution, and (C) a specific basic compound.

摘要翻译： 一种正型光敏组合物，其包含（A）在光化射线或辐射照射时产生酸的酸产生剂，（B）具有单环或多环脂环烃结构并通过酸作用而分解以增加溶解度的树脂 在碱性显影液中，和（C）特定的碱性化合物。

公开(公告)号：US07713677B2

公开(公告)日：2010-05-11

申请号：US11562714

申请日：2006-11-22

申请人： Hi Kuk Lee ,  Byung Uk Kim ,  Hyoc Min Youn ,  Joo Pyo Yun ,  Woo Seok Jeon

发明人： Hi Kuk Lee ,  Byung Uk Kim ,  Hyoc Min Youn ,  Joo Pyo Yun ,  Woo Seok Jeon

IPC分类号： G03F7/00 ,  G03F7/004

CPC分类号： G03F7/0392 ,  G03F7/0045 ,  Y10S430/106 ,  Y10S430/114 ,  Y10S430/118

摘要： A photoresist composition capable of forming a high resolution pattern without an additional heating process includes an alkali-soluble phenol polymer in an amount of 10 to 70 parts by weight, including at least one unit of Formula 1, a photo-acid generator in an amount of 0.5 to 10 parts by weight, a dissolution inhibitor in an amount of 5 to 50 parts by weight, including at least one unit of Formula 2, and a solvent in an amount of 10 to 90 parts by weight, wherein the amounts of the foregoing components is based on a total of 100 parts by weight of alkali-soluble phenol polymer, photo-acid generator, dissolution inhibitor, and solvent, and wherein Formulas 1 and 2 have the structures: wherein R is a methyl group, wherein R1, R2 and R3 are the same or different and are hydrogen or t-butyl vinyl ether protective groups.

摘要翻译： 能够在没有附加加热方法的情况下形成高分辨率图案的光致抗蚀剂组合物包括10至70重量份的碱溶性苯酚聚合物，包括至少一个式1的单元，量的光酸产生剂 为0.5〜10重量份，5〜50重量份的溶解抑制剂，包含至少1个单元的式2，溶剂的量为10〜90重量份，其中， 前述组分基于总共100重量份的碱溶性酚聚合物，光酸发生剂，溶解抑制剂和溶剂，其中式1和式2具有以下结构：其中R是甲基，其中R1， R2和R3相同或不同，为氢或叔丁基乙烯基醚保护基。

公开(公告)号：US20060160021A1

公开(公告)日：2006-07-20

申请号：US11334200

申请日：2006-01-17

申请人： Boo-Deuk Kim ,  Jin-A Ryu ,  Jae-Ho Kim ,  Young-Ho Kim ,  Kyoung-Mi Kim

发明人： Boo-Deuk Kim ,  Jin-A Ryu ,  Jae-Ho Kim ,  Young-Ho Kim ,  Kyoung-Mi Kim

IPC分类号： G03C1/76

CPC分类号： G03F7/0392 ,  G03F7/0045 ,  Y10S430/114 ,  Y10S430/118

摘要： In a photoresist composition for a semiconductor manufacturing process and a method of forming a photoresist pattern using the photoresist composition, the photoresist composition includes an organic dispersing agent for dispersing acid (H+). The photoresist film may have enough spaces among photosensitive polymers so that acid may be dispersed sufficiently in an exposure process. Thus, a photoresist pattern may be easily formed in a defocus region. Defects in a semiconductor device may be reduced and a productivity of the semiconductor manufacturing process may be enhanced.

摘要翻译： 在用于半导体制造方法的光致抗蚀剂组合物和使用光致抗蚀剂组合物形成光致抗蚀剂图案的方法中，光致抗蚀剂组合物包括用于分散酸（H +）的有机分散剂。 光致抗蚀剂膜可以在光敏聚合物中具有足够的空间，使得酸可以在曝光过程中充分分散。 因此，可以在散焦区域中容易地形成光致抗蚀剂图案。 可以减少半导体器件中的缺陷，并且可以提高半导体制造工艺的生产率。

公开(公告)号：US06919159B2

公开(公告)日：2005-07-19

申请号：US10265102

申请日：2002-10-07

申请人： Hirotaka Matsumoto ,  Shintaro Washizu ,  Kazunori Nigorikawa

发明人： Hirotaka Matsumoto ,  Shintaro Washizu ,  Kazunori Nigorikawa

IPC分类号： G03F7/004 ,  G03F7/00 ,  G03F7/027 ,  G03F7/028 ,  G03F7/031

CPC分类号： G03F7/031 ,  G03F7/002 ,  G03F7/027 ,  Y10S430/114 ,  Y10S430/115 ,  Y10S430/118

摘要： The present invention provides a photopolymerizable composition, which is highly sensitive to visible light rays to IR rays and has an excellent raw storage property, and a recording material capable of carrying out highly sensitive image recording and having an excellent raw storage property and humidity dependency. Namely, the invention provides a photopolymerizable composition containing at least a polymerizable compound having an ethylenic unsaturated bond, a photoradical generating agent, and a thiol compound represented by the following general formula (I) and a recording material using the photopolymerizable composition: [R represents an alkyl or an aryl, either of which may have substituents; A represents an atom group forming a 5-member or 6-member heteroring having an N═C—N portion and carbon atoms and A may further have a substituent group.].

摘要翻译： 本发明提供了对可见光线对红外线高度敏感且具有优异的原始储存性的可光聚合组合物，以及能够进行高灵敏度图像记录并且具有优异的原始储存性和湿度依赖性的记录材料。 即，本发明提供至少含有具有烯键式不饱和键的聚合性化合物，光自由基产生剂和下述通式（I）表示的硫醇化合物的光聚合性组合物和使用该光聚合性组合物的记录材料：[R表示 烷基或芳基，其中任一个可以具有取代基; A表示形成具有N-C-N部分和碳原子的5元或6元杂环的原子团，A可以进一步具有取代基。

公开(公告)号：US06869748B2

公开(公告)日：2005-03-22

申请号：US10611881

申请日：2003-07-03

申请人： Takanobu Takeda ,  Osamu Watanabe

发明人： Takanobu Takeda ,  Osamu Watanabe

IPC分类号： G03F7/027 ,  C08F20/26 ,  C08F212/04 ,  G03F7/039 ,  H01L21/027 ,  G03F7/004

CPC分类号： G03F7/0392 ,  Y10S430/118 ,  Y10S430/143

摘要： Resist compositions comprising as the base resin a polymer using an alkoxyalkyl (meth)acrylate as a reactive group which is decomposable under the action of an acid to increase solubility in alkali have advantages including a practical level of shelf stability, a significantly enhanced contrast of alkali dissolution rate before and after exposure, a high sensitivity, and a high resolution over a wide baking temperature range. The compositions are best suited as a chemically amplified positive resist material for micropatterning in the manufacture of VLSI.

摘要翻译： 包含作为基础树脂的抗蚀剂组合物使用（甲基）丙烯酸烷氧基烷基酯作为反应性基团的聚合物，其在酸的作用下可分解以增加在碱中的溶解度，其优点包括实际的贮存稳定性水平，显着提高碱的对比度 曝光前后的溶出速率，高灵敏度，以及较宽的烘烤温度范围内的高分辨率。 该组合物最适合用作VLSI制造中用于微图案化学的化学放大正性抗蚀剂材料。

公开(公告)号：US06815143B2

公开(公告)日：2004-11-09

申请号：US10052687

申请日：2002-01-18

申请人： Satoshi Watanabe

发明人： Satoshi Watanabe

IPC分类号： G03F7004

CPC分类号： G03F7/0045 ,  G03F7/0395 ,  G03F7/0397 ,  Y10S430/114 ,  Y10S430/118 ,  Y10S430/122 ,  Y10S430/143

摘要： Provided are a PED-stabilizer-containing resist material having high sensitivity and high resolution, and sufficient PED stability; and a pattern forming method using the resist material. More specifically, the resist material contains at least one compound selected from thiol derivatives, disulfide derivatives and thiolsulfonate derivatives. This resist material may further contain a dissolution inhibitor and/or surfactant. The pattern forming method comprises steps of applying the resist material to a substrate; after a heat treatment, exposing the substrate to a high energy beam or electron beam through a photomask; and after an optional heat treatment, developing the resist material with a developer.

摘要翻译： 提供具有高灵敏度和高分辨率以及足够的PED稳定性的含PED稳定剂的抗蚀剂材料; 以及使用该抗蚀剂材料的图案形成方法。 更具体地说，抗蚀剂材料含有至少一种选自硫醇衍生物，二硫化物衍生物和硫醇磺酸盐衍生物的化合物。 该抗蚀剂材料还可以含有溶解抑制剂和/或表面活性剂。 图案形成方法包括以下步骤：将抗蚀剂材料施加到基底上; 在热处理之后，通过光掩模将衬底暴露于高能束或电子束; 并且在可选的热处理之后，用显影剂显影抗蚀剂材料。

公开(公告)号：US20030224284A1

公开(公告)日：2003-12-04

申请号：US10159891

申请日：2002-05-30

发明人： Ting Tao

IPC分类号： G03F007/004

CPC分类号： B41C1/1008 ,  B41C2210/04 ,  B41C2210/06 ,  B41C2210/22 ,  B41C2210/24 ,  B41C2210/262 ,  G03F7/0045 ,  G03F7/038 ,  Y10S430/115 ,  Y10S430/118 ,  Y10S430/128

摘要： A radiation-sensitive patterning composition comprising: (1) at least one acid generating compound selected from the group of compounds of formulae (I) or (II): 1 wherein R1, R2, R3, R4, R5, and R6, are individually selected from the group consisting of a hydrogen atom, nitro group, hydroxyl group, a carbonyl group, a halogen atom, a cyano group and an unsubstituted or substituted alkyl group, an unsubstituted or substituted cycloalkyl group; an unsubstituted or substituted alkoxy group, or an unsubstituted or substituted aryl group; wherein Xnull represents an onium ion selected from the group consisting of diazonium, iodonium, sulfonium, phosphonium, bromonium, chloronium, oxysulfoxonium, oxysulfonium, sulfoxonium, selenium, tellurium and arsenium; and wherein n is an integer from 4 to 100; (2) at least one cross-linking agent cross-linkable by an acid; (3) at least one polymer compound capable of reacting with the cross-linking agent; and (4) at least one infrared absorbing compound.

摘要翻译： 一种辐射敏感性图案化组合物，其包含：（1）选自式（I）或（II）的化合物的至少一种产酸化合物：其中R1，R2，R3，R4，R5和R6被单独选择 由氢原子，硝基，羟基，羰基，卤素原子，氰基和未取代或取代的烷基组成的组，未取代或取代的环烷基; 未取代或取代的烷氧基，或未取代或取代的芳基; 其中X +表示选自重氮，碘鎓，锍，鏻，溴鎓，氯鎓，氧硫氧基鎓，氧锍，氧化锍，硒，碲和砷的鎓离子; 并且其中n为4至100的整数; （2）至少一种可被酸交联的交联剂; （3）能够与交联剂反应的至少一种高分子化合物; 和（4）至少一种红外吸收化合物。

公开(公告)号：US20030129523A1

公开(公告)日：2003-07-10

申请号：US10265102

申请日：2002-10-07

发明人： Hirotaka Matsumoto ,  Shintaro Washizu ,  Kazunori Nigorikawa

IPC分类号： G03F007/105 ,  G03F007/09 ,  G03F007/028

CPC分类号： G03F7/031 ,  G03F7/002 ,  G03F7/027 ,  Y10S430/114 ,  Y10S430/115 ,  Y10S430/118

摘要： The present invention provides a photopolymerizable composition, which is highly sensitive to visible light rays to IR rays and has an excellent raw storage property, and a recording material capable of carrying out highly sensitive image recording and having an excellent raw storage property and humidity dependency. Namely, the invention provides a photopolymerizable composition containing at least a polymerizable compound having an ethylenic unsaturated bond, a photoradical generating agent, and a thiol compound represented by the following general formula (I) and a recording material using the photopolymerizable composition: General formula (I) 1 nullR represents an alkyl or an aryl, either of which may have substituents; A represents an atom group forming a 5-member or 6-member heteroring having an NnullCnullN portion and carbon atoms and A may further have a substituent group.null.

摘要翻译： 本发明提供了对可见光线对红外线高度敏感且具有优异的原始储存性的可光聚合组合物，以及能够进行高灵敏度图像记录并且具有优异的原始储存性和湿度依赖性的记录材料。 即，本发明提供至少含有具有烯键式不饱和键的可聚合化合物，光自由基产生剂和由以下通式（I）表示的硫醇化合物的光聚合组合物和使用光聚合组合物的记录材料：通式 I）[R表示烷基或芳基，其中任一个可具有取代基; A表示形成具有N = C-N部分和碳原子的5元或6元杂原子的原子团，A可以进一步具有取代基。

公开(公告)号：US20020090569A1

公开(公告)日：2002-07-11

申请号：US09987916

申请日：2001-11-16

发明人： Aki Suzuki ,  Makoto Murata ,  Hiromichi Hara ,  Eiichi Kobayashi

IPC分类号： G03F007/038

CPC分类号： G03F7/0392 ,  G03F7/0045 ,  Y10S430/106 ,  Y10S430/114 ,  Y10S430/115 ,  Y10S430/118 ,  Y10S430/122

摘要： A radiation-sensitive resin composition comprising (A) a photoacid generator such as 2,4,6-trimethylphenyldiphenylsulfonium 2,4-difluorobenzenesulfonate or 2,4,6-trimethylphenyldiphenylsulfonium 4-trifluoromethylbenzenesulfonate and (B) a resin having an acetal structure typified by a poly(p-hydroxystyrene) resin in which a part of hydrogen atoms of phenolic hydroxyl groups have been replaced by 1-ethoxyethyl groups, 1-ethoxyethyl groups and t-butoxycarbonyl groups, or 1-ethoxyethyl groups and t-butyl groups. The resin composition is sensitive to deep ultraviolet rays and charged particles such as electron beams, exhibits excellent resolution performance and pattern shape-forming capability, and suppresses a nano-edge roughness phenomenon to a minimal extent.

摘要翻译： 一种辐射敏感性树脂组合物，其包含（A）光酸产生剂如2,4,6-三甲基苯基二苯基锍2,4-二氟苯磺酸盐或2,4,6-三甲基苯基二苯基锍4-三氟甲基苯磺酸盐和（B）具有缩醛结构的树脂，以 一部分酚羟基的氢原子被1-乙氧基乙基，1-乙氧基乙基，叔丁氧基羰基或1-乙氧基乙基和叔丁基代替的聚（对 - 羟基苯乙烯）树脂。 树脂组合物对深紫外线和电子束等带电粒子敏感，显示出优异的分辨率性能和图案形状形成能力，并且在最小程度上抑制纳米边缘粗糙度现象。