CHEMICAL MECHANICAL POLISHING AQUEOUS DISPERSION AND CHEMICAL MECHANICAL POLISHING METHOD FOR SEMICONDUCTOR DEVICE
    1.
    发明申请
    CHEMICAL MECHANICAL POLISHING AQUEOUS DISPERSION AND CHEMICAL MECHANICAL POLISHING METHOD FOR SEMICONDUCTOR DEVICE 审中-公开
    化学机械抛光水溶液和半导体器件的化学机械抛光方法

    公开(公告)号:US20140011360A1

    公开(公告)日:2014-01-09

    申请号:US14027500

    申请日:2013-09-16

    CPC classification number: H01L21/30625 C09G1/02 C09K3/1463 H01L21/3212

    Abstract: A chemical mechanical polishing aqueous dispersion of the invention includes (A) a first water-soluble polymer having a weight average molecular weight of 500,000 to 2,000,000 and including a heterocyclic ring in its molecule, (B) a second water-soluble polymer or its salt having a weight average molecular weight of 1000 to 10,000 and including one group selected from a carboxyl group and a sulfonic group, (C) an oxidizing agent, and (D) abrasive grains, and has a pH of 7 to 12.

    Abstract translation: 本发明的化学机械研磨用水系分散体包含(A)重均分子量为500,000〜2000000的第一水溶性聚合物,其分子中含有杂环,(B)第二水溶性聚合物或其盐 重均分子量为1000〜10000,包括选自羧基和磺酸基的一个基团,(C)氧化剂和(D)磨粒,pH为7〜12。

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