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    Sputtering Target
    1.
    发明申请
    Sputtering Target 审中-公开
    溅射目标

    公开(公告)号：US20150170890A1

    公开(公告)日：2015-06-18

    申请号：US14402024

    申请日：2013-09-13

    申请人： JX Nippon Mining & Metals Corporation

    发明人： Yuki Ikeda

    IPC分类号： H01J37/34 ,  G11B5/851 ,  G11B5/65 ,  C23C14/08

    CPC分类号： H01J37/3429 ,  C23C14/08 ,  C23C14/14 ,  C23C14/3414 ,  G11B5/65 ,  G11B5/656 ,  G11B5/851 ,  H01J37/3426 ,  H01J2237/332

    摘要： Provided is a sputtering target composed of a metal matrix phase containing Co and a phase containing 6 to 25 mol % of an oxide that is dispersed in the form of grains (hereinafter, referred to as “oxide phase”); and the sputtering target is characterized in that the integral width of the highest peak among single peaks of XRD is 0.7 or less. A non-magnetic material grain-dispersed sputtering target is provided, which does not undergo the formation of initial particles during sputtering to thereby shorten a burn-in time and which enables the generation of steady discharge during sputtering.

    摘要翻译： 提供了由含有Co的金属基质相和含有6〜25摩尔％的以颗粒形式分散的氧化物（以下称为“氧化物相”）的相的组成的溅射靶。 溅射靶的特征在于XRD的单峰中的最高峰的积分宽度为0.7以下。 提供了一种非磁性材料颗粒分散溅射靶，其在溅射期间不会经历初始粒子的形成，从而缩短了老化时间，并且能够在溅射期间产生稳定的放电。

    Co-Cr-Pt-Based Sputtering Target and Method for Producing Same
    2.
    发明申请
    Co-Cr-Pt-Based Sputtering Target and Method for Producing Same 有权
    Co-Cr-Pt基溅射靶及其制备方法

    公开(公告)号：US20140367254A1

    公开(公告)日：2014-12-18

    申请号：US14371511

    申请日：2012-12-12

    申请人： JX Nippon Mining & Metals Corporation

    发明人： Atsushi Sato ,  Yuki Ikeda ,  Atsutoshi Arakawa ,  Hideo Takami ,  Yuichiro Nakamura

    IPC分类号： C23C14/34 ,  B22F5/00 ,  H01J37/34

    CPC分类号： C23C14/3414 ,  B22F1/00 ,  B22F5/00 ,  B22F9/04 ,  B22F2201/10 ,  B22F2201/20 ,  B22F2302/25 ,  C22C1/05 ,  C22C1/10 ,  C22C19/07 ,  C22C32/0026 ,  C23C14/06 ,  G11B5/851 ,  H01J37/3429

    摘要： A sputtering target containing, as metal components, 0.5 to 45 mol % of Cr and remainder being Co, and containing, as non-metal components, two or more types of oxides including Ti oxide, wherein a structure of the sputtering target is configured from regions where oxides including at least Ti oxide are dispersed in Co (non-Cr-based regions), and a region where oxides other than Ti oxide are dispersed in Cr or Co—Cr (Cr-based region), and the non-Cr-based regions are scattered in the Cr-based region. An object of this invention is to provide a sputtering target for forming a granular film which suppresses the formation of coarse complex oxide grains and generates fewer particles during sputtering.

    摘要翻译： 作为金属成分的溅射靶含有0.5〜45摩尔％的Cr，余量为Co，并含有作为非金属成分的两种以上的氧化物，包括Ti氧化物，其中溅射靶的结构由 将至少包含Ti氧化物的氧化物分散在Co（非Cr系区域）中的氧化物区域和分布在Cr或Co-Cr（Cr-基区域）之外的氧化钛以外的区域，非Cr 的区域分散在Cr基区域。 本发明的目的是提供一种用于形成粒状膜的溅射靶，其抑制粗大的复合氧化物颗粒的形成并在溅射期间产生更少的颗粒。

    Ferromagnetic Material Sputtering Target
    4.
    发明申请
    Ferromagnetic Material Sputtering Target 审中-公开
    铁磁材料溅射靶

    公开(公告)号：US20140311899A1

    公开(公告)日：2014-10-23

    申请号：US14354953

    申请日：2013-01-21

    申请人： JX Nippon Mining & Metals Corporation

    发明人： Yuki Ikeda

    IPC分类号： H01J37/34

    CPC分类号： H01J37/3426 ,  C23C14/083 ,  C23C14/3414 ,  G11B5/851

    摘要： Provided is a sputtering target which comprises a metal matrix phase comprising Co and Pt, Co and Cr, or Co, Cr and Pt; and an oxide phase at least containing Cr2O3, wherein Cr2O3 is contained in amount of 1 to 16 mol %. The sputtering target is characterized in that the total amount of alkali metals as impurities is 30 wt ppm or less. It becomes possible to inhibit the formation of spots originating from these impurities and detachment of magnetic thin films during or after film formation by sputtering. Accordingly, the magnetic thin film of a magnetic recording medium can be produced which has excellent durability.

    摘要翻译： 提供了一种溅射靶，其包括包含Co和Pt，Co和Cr或Co，Cr和Pt的金属基质相; 和至少含有Cr 2 O 3的氧化物相，其中Cr 2 O 3的含量为1〜16摩尔％。 溅射靶的特征在于作为杂质的碱金属的总量为30重量ppm以下。 可以通过溅射抑制由这些杂质形成的斑点的形成和薄膜形成期间或之后的磁性薄膜的剥离。 因此，可以制造具有优异的耐久性的磁记录介质的磁性薄膜。