公开(公告)号：US20160049513A1

公开(公告)日：2016-02-18

申请号：US14882440

申请日：2015-10-13

申请人： Jack T. Kavalieros ,  Nancy Zelick ,  Been-Yih Jin ,  Markus Kuhn ,  Stephen M. Cea

发明人： Jack T. Kavalieros ,  Nancy Zelick ,  Been-Yih Jin ,  Markus Kuhn ,  Stephen M. Cea

IPC分类号： H01L29/78 ,  H01L29/10 ,  H01L29/165

CPC分类号： H01L29/1054 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66795 ,  H01L29/66818 ,  H01L29/7842 ,  H01L29/7849 ,  H01L29/785 ,  H01L29/7851 ,  H01L29/7854

摘要： Techniques are disclosed for enabling multi-sided condensation of semiconductor fins. The techniques can be employed, for instance, in fabricating fin-based transistors. In one example case, a strain layer is provided on a bulk substrate. The strain layer is associated with a critical thickness that is dependent on a component of the strain layer, and the strain layer has a thickness lower than or equal to the critical thickness. A fin is formed in the substrate and strain layer, such that the fin includes a substrate portion and a strain layer portion. The fin is oxidized to condense the strain layer portion of the fin, so that a concentration of the component in the strain layer changes from a pre-condensation concentration to a higher post-condensation concentration, thereby causing the critical thickness to be exceeded.

摘要翻译： 公开了用于实现半导体翅片的多面冷凝的技术。 这些技术可以用于例如制造基于鳍的晶体管。 在一个示例的情况下，在体基板上设置应变层。 应变层与取决于应变层的部件的临界厚度相关联，并且应变层具有低于或等于临界厚度的厚度。 在基板和应变层中形成翅片，使得翅片包括基板部分和应变层部分。 将翅片氧化以冷凝翅片的应变层部分，使得应变层中的组分的浓度从预凝结浓度变为较高的缩合后浓度，从而超过临界厚度。

公开(公告)号：US20110147811A1

公开(公告)日：2011-06-23

申请号：US12646427

申请日：2009-12-23

申请人： Jack T. Kavalieros ,  Nancy Zelick ,  Been-Yih Jin ,  Markus Kuhn ,  Stephen M. Cea

发明人： Jack T. Kavalieros ,  Nancy Zelick ,  Been-Yih Jin ,  Markus Kuhn ,  Stephen M. Cea

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/1054 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66795 ,  H01L29/66818 ,  H01L29/7842 ,  H01L29/7849 ,  H01L29/785 ,  H01L29/7851 ,  H01L29/7854

摘要： Techniques are disclosed for enabling multi-sided condensation of semiconductor fins. The techniques can be employed, for instance, in fabricating fin-based transistors. In one example case, a strain layer is provided on a bulk substrate. The strain layer is associated with a critical thickness that is dependent on a component of the strain layer, and the strain layer has a thickness lower than or equal to the critical thickness. A fin is formed in the substrate and strain layer, such that the fin includes a substrate portion and a strain layer portion. The fin is oxidized to condense the strain layer portion of the fin, so that a concentration of the component in the strain layer changes from a pre-condensation concentration to a higher post-condensation concentration, thereby causing the critical thickness to be exceeded.

摘要翻译： 公开了用于实现半导体翅片的多面冷凝的技术。 这些技术可以用于例如制造基于鳍的晶体管。 在一个示例的情况下，在体基板上设置应变层。 应变层与取决于应变层的部件的临界厚度相关联，并且应变层具有低于或等于临界厚度的厚度。 在基板和应变层中形成翅片，使得翅片包括基板部分和应变层部分。 将翅片氧化以冷凝翅片的应变层部分，使得应变层中的组分的浓度从预凝结浓度变为较高的缩合后浓度，从而超过临界厚度。

公开(公告)号：US09159835B2

公开(公告)日：2015-10-13

申请号：US13488238

申请日：2012-06-04

申请人： Jack T. Kavalieros ,  Nancy Zelick ,  Been-Yih Jin ,  Markus Kuhn ,  Stephen M. Cea

发明人： Jack T. Kavalieros ,  Nancy Zelick ,  Been-Yih Jin ,  Markus Kuhn ,  Stephen M. Cea

IPC分类号： H01L29/66 ,  H01L29/78

CPC分类号： H01L29/1054 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66795 ,  H01L29/66818 ,  H01L29/7842 ,  H01L29/7849 ,  H01L29/785 ,  H01L29/7851 ,  H01L29/7854

摘要： Techniques are disclosed for enabling multi-sided condensation of semiconductor fins. The techniques can be employed, for instance, in fabricating fin-based transistors. In one example case, a strain layer is provided on a bulk substrate. The strain layer is associated with a critical thickness that is dependent on a component of the strain layer, and the strain layer has a thickness lower than or equal to the critical thickness. A fin is formed in the substrate and strain layer, such that the fin includes a substrate portion and a strain layer portion. The fin is oxidized to condense the strain layer portion of the fin, so that a concentration of the component in the strain layer changes from a pre-condensation concentration to a higher post-condensation concentration, thereby causing the critical thickness to be exceeded.

摘要翻译： 公开了用于实现半导体翅片的多面冷凝的技术。 这些技术可以用于例如制造基于鳍的晶体管。 在一个示例的情况下，在体基板上设置应变层。 应变层与取决于应变层的部件的临界厚度相关联，并且应变层具有低于或等于临界厚度的厚度。 在基板和应变层中形成翅片，使得翅片包括基板部分和应变层部分。 将翅片氧化以冷凝翅片的应变层部分，使得应变层中的组分的浓度从预凝结浓度变为较高的缩合后浓度，从而超过临界厚度。

公开(公告)号：US09419140B2

公开(公告)日：2016-08-16

申请号：US14882440

申请日：2015-10-13

申请人： Jack T. Kavalieros ,  Nancy Zelick ,  Been-Yih Jin ,  Markus Kuhn ,  Stephen M. Cea

发明人： Jack T. Kavalieros ,  Nancy Zelick ,  Been-Yih Jin ,  Markus Kuhn ,  Stephen M. Cea

IPC分类号： H01L29/78 ,  H01L29/66 ,  H01L29/10 ,  H01L29/165

CPC分类号： H01L29/1054 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66795 ,  H01L29/66818 ,  H01L29/7842 ,  H01L29/7849 ,  H01L29/785 ,  H01L29/7851 ,  H01L29/7854

摘要： Techniques are disclosed for enabling multi-sided condensation of semiconductor fins. The techniques can be employed, for instance, in fabricating fin-based transistors. In one example case, a strain layer is provided on a bulk substrate. The strain layer is associated with a critical thickness that is dependent on a component of the strain layer, and the strain layer has a thickness lower than or equal to the critical thickness. A fin is formed in the substrate and strain layer, such that the fin includes a substrate portion and a strain layer portion. The fin is oxidized to condense the strain layer portion of the fin, so that a concentration of the component in the strain layer changes from a pre-condensation concentration to a higher post-condensation concentration, thereby causing the critical thickness to be exceeded.

公开(公告)号：US20120241818A1

公开(公告)日：2012-09-27

申请号：US13488238

申请日：2012-06-04

申请人： Jack T. Kavalieros ,  Nancy Zelick ,  Been-Yih Jin ,  Markus Kuhn ,  Stephen M. Cea

发明人： Jack T. Kavalieros ,  Nancy Zelick ,  Been-Yih Jin ,  Markus Kuhn ,  Stephen M. Cea

IPC分类号： H01L29/78

CPC分类号： H01L29/1054 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66795 ,  H01L29/66818 ,  H01L29/7842 ,  H01L29/7849 ,  H01L29/785 ,  H01L29/7851 ,  H01L29/7854

摘要： Techniques are disclosed for enabling multi-sided condensation of semiconductor fins. The techniques can be employed, for instance, in fabricating fin-based transistors. In one example case, a strain layer is provided on a bulk substrate. The strain layer is associated with a critical thickness that is dependent on a component of the strain layer, and the strain layer has a thickness lower than or equal to the critical thickness. A fin is formed in the substrate and strain layer, such that the fin includes a substrate portion and a strain layer portion. The fin is oxidized to condense the strain layer portion of the fin, so that a concentration of the component in the strain layer changes from a pre-condensation concentration to a higher post-condensation concentration, thereby causing the critical thickness to be exceeded.

摘要翻译： 公开了用于实现半导体翅片的多面冷凝的技术。 这些技术可以用于例如制造基于鳍的晶体管。 在一个示例的情况下，在体基板上设置应变层。 应变层与取决于应变层的部件的临界厚度相关联，并且应变层具有低于或等于临界厚度的厚度。 在基板和应变层中形成翅片，使得翅片包括基板部分和应变层部分。 将翅片氧化以冷凝翅片的应变层部分，使得应变层中的组分的浓度从预凝结浓度变为较高的缩合后浓度，从而超过临界厚度。

公开(公告)号：US08211772B2

公开(公告)日：2012-07-03

申请号：US12646427

申请日：2009-12-23

申请人： Jack T. Kavalieros ,  Nancy M. Zelick ,  Been-Yih Jin ,  Markus Kuhn ,  Stephen M. Cea

发明人： Jack T. Kavalieros ,  Nancy M. Zelick ,  Been-Yih Jin ,  Markus Kuhn ,  Stephen M. Cea

IPC分类号： H01L21/336

CPC分类号： H01L29/1054 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66795 ,  H01L29/66818 ,  H01L29/7842 ,  H01L29/7849 ,  H01L29/785 ,  H01L29/7851 ,  H01L29/7854

摘要： Techniques are disclosed for enabling multi-sided condensation of semiconductor fins. The techniques can be employed, for instance, in fabricating fin-based transistors. In one example case, a strain layer is provided on a bulk substrate. The strain layer is associated with a critical thickness that is dependent on a component of the strain layer, and the strain layer has a thickness lower than or equal to the critical thickness. A fin is formed in the substrate and strain layer, such that the fin includes a substrate portion and a strain layer portion. The fin is oxidized to condense the strain layer portion of the fin, so that a concentration of the component in the strain layer changes from a pre-condensation concentration to a higher post-condensation concentration, thereby causing the critical thickness to be exceeded.

摘要翻译： 公开了用于实现半导体翅片的多面冷凝的技术。 这些技术可以用于例如制造基于鳍的晶体管。 在一个示例的情况下，在体基板上设置应变层。 应变层与取决于应变层的部件的临界厚度相关联，并且应变层具有低于或等于临界厚度的厚度。 在基板和应变层中形成翅片，使得翅片包括基板部分和应变层部分。 将翅片氧化以冷凝翅片的应变层部分，使得应变层中的组分的浓度从预凝结浓度变为较高的缩合后浓度，从而超过临界厚度。

公开(公告)号：US20110147847A1

公开(公告)日：2011-06-23

申请号：US12653971

申请日：2009-12-21

申请人： Stephen M. Cea ,  Martin D. Giles ,  Kelin Kuhn ,  Jack T. Kavalieros ,  Markus Kuhn

发明人： Stephen M. Cea ,  Martin D. Giles ,  Kelin Kuhn ,  Jack T. Kavalieros ,  Markus Kuhn

IPC分类号： H01L29/78 ,  H01L21/762

CPC分类号： H01L29/785 ,  H01L21/76224 ,  H01L29/66795 ,  H01L29/7842

摘要： The present disclosure relates to the field of fabricating microelectronic devices. In at least one embodiment, the present disclosure relates to forming isolation structures in strained semiconductor bodies of non-planar transistors while maintaining strain in the semiconductor bodies.

摘要翻译： 本公开涉及制造微电子器件的领域。 在至少一个实施例中，本公开涉及在保持半导体本体中的应变的同时在非平面晶体管的应变半导体本体中形成隔离结构。

公开(公告)号：US20140070273A1

公开(公告)日：2014-03-13

申请号：US14018867

申请日：2013-09-05

申请人： Stephen M. Cea ,  Roza Kotlyar ,  Jack T. Kavalieros ,  Martin D. Giles ,  Tahir Ghani ,  Kelin J. Kuhn ,  Markus Kuhn ,  Nancy M. Zelick

发明人： Stephen M. Cea ,  Roza Kotlyar ,  Jack T. Kavalieros ,  Martin D. Giles ,  Tahir Ghani ,  Kelin J. Kuhn ,  Markus Kuhn ,  Nancy M. Zelick

IPC分类号： H01L29/78

CPC分类号： H01L29/7848 ,  H01L29/1054 ,  H01L29/66795 ,  H01L29/7849 ,  H01L29/785

摘要： A method and a device made according to the method. The method comprises providing a substrate including a first material, and providing a fin including a second material, the fin being disposed on the substrate and having a device active portion, the first material and the second material presenting a lattice mismatch between respective crystalline structures thereof. Providing the fin includes providing a biaxially strained film including the second material on the substrate; and removing parts of the biaxially strained film to form a substantially uniaxially strained fin therefrom.

摘要翻译： 根据该方法制造的方法和装置。 该方法包括提供包括第一材料的基底，并且提供包括第二材料的翅片，所述翅片设置在所述基底上并且具有器件活性部分，所述第一材料和所述第二材料在其各自的结晶结构之间呈现晶格失配 。 提供散热片包括在基板上提供包括第二材料的双轴应变膜; 并除去双轴应变膜的部分以形成基本上单轴应变的翅片。

公开(公告)号：US20120305990A1

公开(公告)日：2012-12-06

申请号：US13588416

申请日：2012-08-17

申请人： Stephen M Cea ,  Martin D. Giles ,  Kelin Kuhn ,  Jack T. Kavalieros ,  Markus Kuhn

发明人： Stephen M Cea ,  Martin D. Giles ,  Kelin Kuhn ,  Jack T. Kavalieros ,  Markus Kuhn

IPC分类号： H01L29/78 ,  H01L21/265

CPC分类号： H01L29/785 ,  H01L21/76224 ,  H01L29/66795 ,  H01L29/7842

摘要： The present disclosure relates to the field of fabricating microelectronic devices. In at least one embodiment, the present disclosure relates to forming isolation structures in strained semiconductor bodies of non-planar transistors while maintaining strain in the semiconductor bodies.

摘要翻译： 本公开涉及制造微电子器件的领域。 在至少一个实施例中，本公开涉及在保持半导体本体中的应变的同时在非平面晶体管的应变半导体本体中形成隔离结构。

公开(公告)号：US08558279B2

公开(公告)日：2013-10-15

申请号：US12924232

申请日：2010-09-23

申请人： Stephen M. Cea ,  Roza Kotlyar ,  Jack T. Kavalieros ,  Martin D. Giles ,  Tahir Ghani ,  Kelin J. Kuhn ,  Markus Kuhn ,  Nancy M. Zelick

发明人： Stephen M. Cea ,  Roza Kotlyar ,  Jack T. Kavalieros ,  Martin D. Giles ,  Tahir Ghani ,  Kelin J. Kuhn ,  Markus Kuhn ,  Nancy M. Zelick

IPC分类号： H01L21/00

CPC分类号： H01L29/7848 ,  H01L29/1054 ,  H01L29/66795 ,  H01L29/7849 ,  H01L29/785

摘要： A method and a device made according to the method. The method comprises providing a substrate including a first material, and providing a fin including a second material, the fin being disposed on the substrate and having a device active portion, the first material and the second material presenting a lattice mismatch between respective crystalline structures thereof. Providing the fin includes providing a biaxially strained film including the second material on the substrate; and removing parts of the biaxially strained film to form a substantially uniaxially strained fin therefrom.

摘要翻译： 根据该方法制造的方法和装置。 该方法包括提供包括第一材料的基底，并且提供包括第二材料的翅片，所述翅片设置在所述基底上并且具有器件活性部分，所述第一材料和所述第二材料在其各自的结晶结构之间呈现晶格失配 。 提供散热片包括在基板上提供包括第二材料的双轴应变膜; 并除去双轴应变膜的部分以形成基本上单轴应变的翅片。