公开(公告)号：US08991649B2

公开(公告)日：2015-03-31

申请号：US13343893

申请日：2012-01-05

申请人： Jackson Wegelin ,  Christopher Cole

发明人： Jackson Wegelin ,  Christopher Cole

IPC分类号： B67D7/06 ,  B67D7/00 ,  B65D88/54 ,  B67D7/22 ,  A47K5/12

CPC分类号： A47K5/1207 ,  A47K5/1217

摘要： A dispensing system includes a housing and a refill container carrying a dispensable material and received in the housing. A pump mechanism is coupled to the refill container and movable from a first position to a second position and back to the first position. An identifier is carried by either the refill container or the pump mechanism, and a detection device is carried by the housing. The detection device monitors a status of the identifier and allows operation of the pump mechanism based on a status change of the identifier.

摘要翻译： 分配系统包括壳体和承载有可分配材料并且容纳在壳体中的补充容器。 泵机构联接到再填充容器并且可以从第一位置移动到第二位置并返回到第一位置。 标识符由再填充容器或泵机构承载，并且检测装置由壳体承载。 检测装置监视标识符的状态，并且允许基于标识符的状态改变的泵机构的操作。

公开(公告)号：US10982732B2

公开(公告)日：2021-04-20

申请号：US16382437

申请日：2019-04-12

申请人： Christopher Cole ,  James K. Geroux

发明人： Christopher Cole ,  James K. Geroux

IPC分类号： F16G11/14 ,  B66D1/60 ,  B66F19/00 ,  B66C1/12

摘要： A device for use with one or more lines that includes a unitary rigid body having an annular portion surrounding a central opening and at least four finger sections that extend from the annular portion of the rigid body. A first finger section and a second finger section curve toward each other on one end of the rigid body and terminate in blunt tips that are spaced apart from each other by a gap. Similarly, a third finger section and a fourth finger section curve toward each other on an opposite end of the rigid body and terminate in blunt tips that are spaced apart from each other by a gap. The device maximizes the pulling strength of lines while reducing the possibility of line failure. Also disclosed are methods of using the device for shortening a line, belaying an object, joining two lines together and for forming a V-bridle.

公开(公告)号：US08943988B1

公开(公告)日：2015-02-03

申请号：US13290943

申请日：2011-11-07

申请人： Kennon Guglielmo ,  Christopher Cole

发明人： Kennon Guglielmo ,  Christopher Cole

IPC分类号： B63H25/04

CPC分类号： B63H25/38 ,  B63H1/04 ,  B63H5/07 ,  B63H21/21 ,  B63H21/24 ,  B63H23/34 ,  B63H25/02 ,  B63H25/36 ,  B63H2025/063 ,  B63H2025/066

摘要： A steering control system for ski boat with an inboard motor and a single, non-steerable propeller. The control system augments the traditional aft rudder with a forward rudder (located immediately in front of the propeller), and controls one or both rudders to improve steering when backing and in low forward speed conditions. The control system may control only the forward rudder, while the pre-existing controls operate the aft rudder, or optionally controls both rudders. The rudder angle control algorithm calculates proportional rudder angles based on helm and throttle settings, or optimal rudder angles based on more sensed conditions including the operator's helm and throttle controls, the ski boat's direction and speed, propeller RPM and thrust direction, and each rudder's angle. An electronic controller sends control signals to the rudders to achieve the optimal rudder angles.

摘要翻译： 一种带内置电机的滑雪板转向控制系统和一个单向，非导向螺旋桨。 控制系统使用前方舵（位于螺旋桨前方）增加传统后方舵，并控制一个或两个方向舵，以提高后仰时的转向和较低的前进速度条件。 控制系统可以仅控制前方舵，而预先存在的控制器操作尾舵，或者可选地控制两个方向舵。 方向舵角度控制算法基于舵和节气门设置，或者基于更多感应到的条件，包括操作员的舵和节气门控制，滑雪船的方向和速度，螺旋桨RPM和推力方向，以及每个舵的角度来计算比例舵角度 。 电子控制器向舵发送控制信号，以达到最佳的舵角。

公开(公告)号：US08165921B1

公开(公告)日：2012-04-24

申请号：US12368354

申请日：2009-02-10

申请人： Tuomas Sandholm ,  David L. Levine ,  Subhash Suri ,  Robert L. Shields ,  Christopher Cole ,  Richard James McKenzie, Jr. ,  David C. Parkes ,  Vincent Conitzer ,  Benjamin Schmaus

发明人： Tuomas Sandholm ,  David L. Levine ,  Subhash Suri ,  Robert L. Shields ,  Christopher Cole ,  Richard James McKenzie, Jr. ,  David C. Parkes ,  Vincent Conitzer ,  Benjamin Schmaus

IPC分类号： G06Q30/00

CPC分类号： G06Q30/08 ,  G06Q20/10 ,  G06Q30/0641 ,  G06Q40/00 ,  G06Q40/04

摘要： In a live, expressive combinatorial exchange, each of plural bidders can submit a bid. Based on the submitted bids, an allocation of the bids is determined that is optimal for the type of exchange being conducted. At least a portion of each bid of the allocation is displayed to each bidder of a first subset of the bidders that has at least one bid that is not included in the allocation. Each bidder of a subset of the first subset of bidders can then amend one or more of their existing bids or submit a new bid that is considered the next time the allocation is determined. The process of feeding back at least a portion of each bid of the allocation, submitting new bids or amendments to existing bids, and determining a new allocation based on all of the submitted bids continues until a predetermined condition is satisfied.

摘要翻译： 在一场实时，富有表现力的组合交流中，多个投标人可以提交投标。 根据提交的投标，确定对所进行的交易类型最优的投标分配。 每个出价的至少一部分显示给具有至少一个不包括在分配中的出价的投标人的第一子集的每个投标人。 投标人的第一个子集的一个子集的每个投标人可以修改其现有投标中的一个或多个，或者提交下一次确定分配时考虑的新投标。 反馈分配的每个出价的至少一部分，提交新的出价或对现有出价的修正以及基于所有提交的投标确定新的分配的过程继续进行，直到满足预定条件。

公开(公告)号：US08268184B2

公开(公告)日：2012-09-18

申请号：US12826488

申请日：2010-06-29

申请人： Akiteru Ko ,  Christopher Cole

发明人： Akiteru Ko ,  Christopher Cole

IPC分类号： B44C1/22

CPC分类号： H01L21/31116 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/3266 ,  H01J37/32724

摘要： A method for selectively etching a substrate is described. The method includes disposing a substrate comprising a silicon nitride (SiNy) layer overlying silicon in a plasma etching system, and transferring a pattern to the silicon nitride layer using a plasma etch process, wherein the plasma etch process utilizes a process composition having as incipient ingredients a process gas containing C, H and F, and an additive gas including CO2. The method further includes: selecting an amount of the additive gas in the plasma etch process to achieve: (1) a silicon recess formed in the silicon having a depth less than 10 nanometers (nm), and (2) a sidewall profile in the pattern having an angular deviation from 90 degrees less than 2 degrees.

摘要翻译： 描述了一种用于选择性蚀刻衬底的方法。 该方法包括在等离子体蚀刻系统中设置包括硅覆盖硅的氮化硅（SiNy）层的衬底，以及使用等离子体蚀刻工艺将图案转移到氮化硅层，其中等离子体蚀刻工艺利用具有初始成分的工艺组合物 含有C，H和F的工艺气体和包括CO 2的添加气体。 该方法还包括：在等离子体蚀刻工艺中选择一定量的添加气体以实现：（1）在硅中形成的具有深度小于10纳米（nm）的硅凹槽，和（2）在 图案具有小于2度的90度的角度偏差。

公开(公告)号：US07499880B2

公开(公告)日：2009-03-03

申请号：US10803549

申请日：2004-03-18

申请人： Tuomas Sandholm ,  Richard James McKenzie, Jr. ,  David L. Levine ,  David C. Parkes ,  Subhash Suri ,  Vincent Conitzer ,  Robert L. Shields ,  Benjamin Schmaus ,  Christopher Cole

发明人： Tuomas Sandholm ,  Richard James McKenzie, Jr. ,  David L. Levine ,  David C. Parkes ,  Subhash Suri ,  Vincent Conitzer ,  Robert L. Shields ,  Benjamin Schmaus ,  Christopher Cole

IPC分类号： G06Q30/00

CPC分类号： G06Q30/08 ,  G06Q20/10 ,  G06Q30/0641 ,  G06Q40/00 ,  G06Q40/04

摘要： In a live, expressive combinatorial exchange, each of a plurality of bidders can submit a bid. Based on the submitted bids, an allocation of the bids is determined that is optimal for the type of exchange being conducted. At least a portion of each bid of the allocation is displayed to each bidder of a first subset of the bidders that has at least one bid that is not included in the allocation. Each bidder of a subset of the first subset of bidders can then amend one or more of their existing bids or submit a new bid that is considered the next time the allocation is determined. The process of feeding back at least a portion of each bid of the allocation, submitting new bids or amendments to existing bids, and determining a new allocation based on all of the submitted bids continues until a predetermined condition is satisfied.

摘要翻译： 在实时，富有表现力的组合交流中，多个投标人可以提交投标。 根据提交的投标，确定对所进行的交易类型最优的投标分配。 每个出价的至少一部分显示给具有至少一个不包括在分配中的出价的投标人的第一子集的每个投标人。 投标人的第一个子集的一个子集的每个投标人可以修改其现有投标中的一个或多个，或者提交下一次确定分配时考虑的新投标。 反馈分配的每个出价的至少一部分，提交新的出价或对现有出价的修正以及基于所有提交的投标确定新的分配的过程继续进行，直到满足预定条件。

公开(公告)号：US08236700B2

公开(公告)日：2012-08-07

申请号：US12542113

申请日：2009-08-17

申请人： Christopher Cole ,  Akiteru Ko

发明人： Christopher Cole ,  Akiteru Ko

IPC分类号： H01L21/302

CPC分类号： H01L21/31116 ,  H01J37/32091 ,  H01J37/321 ,  H01L21/0276 ,  H01L21/31138

摘要： A method of pattern etching a Si-containing anti-reflective coating (ARC) layer is described. The method comprises etching a feature pattern into the silicon-containing ARC layer using plasma formed from a process gas containing SF6 and a hydrocarbon gas. The method further comprises adjusting a flow rate of the hydrocarbon gas relative to a flow rate of the SF6 to reduce a CD bias between a final CD for nested structures in the feature pattern and a final CD for isolated structures in the feature pattern.

摘要翻译： 描述了一种图案蚀刻含Si抗反射涂层（ARC）层的方法。 该方法包括使用由含有SF 6和烃气体的工艺气体形成的等离子体将特征图案蚀刻到含硅ARC层中。 该方法还包括相对于SF6的流量调节烃气体的流速，以减小特征图案中嵌套结构的最终CD和特征图案中的分离结构的最终CD之间的CD偏差。

公开(公告)号：US20090194503A1

公开(公告)日：2009-08-06

申请号：US12024258

申请日：2008-02-01

申请人： Akiteru Ko ,  Christopher Cole

发明人： Akiteru Ko ,  Christopher Cole

IPC分类号： B44C1/22

CPC分类号： H01J37/32192 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32165 ,  H01J37/3266 ,  H01L21/0276 ,  H01L21/0332 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/67109

摘要： A method of dry developing a multi-layer mask having a silicon-containing anti-reflective coating (ARC) layer on a substrate is described. The method comprises forming the multi-layer mask on the substrate, wherein the multi-layer mask comprises a lithographic layer overlying the silicon-containing ARC layer. A feature pattern is then formed in the lithographic layer using a lithographic process. Thereafter, the feature pattern is transferred from the lithographic layer to the silicon-containing ARC layer using a dry plasma etching process, wherein the offset in the critical dimension (CD) bias is reduced between nested structures and isolated structures.

摘要翻译： 描述了在衬底上干燥显影具有含硅抗反射涂层（ARC）层的多层掩模的方法。 该方法包括在衬底上形成多层掩模，其中多层掩模包括覆盖含硅ARC层的光刻层。 然后使用光刻工艺在光刻层中形成特征图案。 此后，使用干等离子体蚀刻工艺将特征图案从光刻层转移到含硅ARC层，其中临界尺寸（CD）偏置的偏移在嵌套结构和隔离结构之间减小。

公开(公告)号：US20070181398A1

公开(公告)日：2007-08-09

申请号：US11347042

申请日：2006-02-03

申请人： Michael Bassett ,  Christopher Cole ,  Clinton McClellan ,  Kevin Schlosser ,  Douglas Woolcott

发明人： Michael Bassett ,  Christopher Cole ,  Clinton McClellan ,  Kevin Schlosser ,  Douglas Woolcott

IPC分类号： F16D43/08

CPC分类号： F16D43/10

摘要： An embodiment provides a friction clutch apparatus that includes a disk assembly disk. The disk assembly has a disk portion selectively coupled to a first member, and a hub portion selectively coupled to a second member. The hub portion is generally axially aligned with the disk portion. The disk portion is rotatable relative to the hub portion. The disk assembly selectively transmits a torque between the first member and the second member. The disk assembly also includes an energy storage member selectively damping the relative rotation between the disk portion and the hub portion. The damping includes relative rotation between the disk portion and the hub portion. The energy storage member is preloaded, thereby requiring a preselected amount of torque to be applied by one of the disk portion and the hub portion to the other of the disk portion and the hub portion prior to the relative rotation.

摘要翻译： 实施例提供一种包括盘组件盘的摩擦离合器装置。 盘组件具有选择性地联接到第一构件的盘部分，以及选择性地联接到第二构件的轮毂部分。 毂部分通常与盘部分轴向对准。 盘部分可相对于轮毂部分旋转。 盘组件选择性地在第一构件和第二构件之间传递扭矩。 盘组件还包括选择性地阻挡盘部分和轮毂部分之间的相对旋转的能量存储构件。 阻尼包括盘部分和轮毂部分之间的相对旋转。 能量存储部件被预加载，从而在相对旋转之前需要将预定量的扭矩施加到盘部分和轮毂部分之一到盘部分和轮毂部分中的另一个。

公开(公告)号：US07888267B2

公开(公告)日：2011-02-15

申请号：US12024258

申请日：2008-02-01

申请人： Akiteru Ko ,  Christopher Cole

发明人： Akiteru Ko ,  Christopher Cole

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01J37/32192 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32165 ,  H01J37/3266 ,  H01L21/0276 ,  H01L21/0332 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/67109

摘要： A method of dry developing a multi-layer mask having a silicon-containing anti-reflective coating (ARC) layer on a substrate is described. The method comprises forming the multi-layer mask on the substrate, wherein the multi-layer mask comprises a lithographic layer overlying the silicon-containing ARC layer. A feature pattern is then formed in the lithographic layer using a lithographic process. Thereafter, the feature pattern is transferred from the lithographic layer to the silicon-containing ARC layer using a dry plasma etching process, wherein the offset in the critical dimension (CD) bias is reduced between nested structures and isolated structures.

摘要翻译： 描述了在衬底上干燥显影具有含硅抗反射涂层（ARC）层的多层掩模的方法。 该方法包括在衬底上形成多层掩模，其中多层掩模包括覆盖含硅ARC层的光刻层。 然后使用光刻工艺在光刻层中形成特征图案。 此后，使用干等离子体蚀刻工艺将特征图案从光刻层转移到含硅ARC层，其中临界尺寸（CD）偏置的偏移在嵌套结构和隔离结构之间减小。