摘要:
Provided are an on-chip balun, a transceiver using the on-chip balun, and a method for fabricating the on-chip balun. The on-chip balun includes: a first metal winding including a port grounded and a port to which an unbalanced signal is input; a second winding outputting an induced current generated by the first metal winding as two signals having about equal intensity and a phase difference of about 180°; and a ground shield positioned between the first and second metal windings and having a symmetric structure so as to generate a symmetric parasitic capacitance between the ground shield and the second metal winding. The ground shield can be inserted between the first and second metal windings to remove an asymmetrical parasitic capacitance so as to reduce a phase imbalance and a gain imbalance of an output value of the second metal winding. As a result, a highly balanced on-chip balun can be fabricated.
摘要:
Provided are an on-chip balun, a transceiver using the on-chip balun, and a method for fabricating the on-chip balun. The on-chip balun includes: a first metal winding including a port grounded and a port to which an unbalanced signal is input; a second winding outputting an induced current generated by the first metal winding as two signals having about equal intensity and a phase difference of about 180°; and a ground shield positioned between the first and second metal windings and having a symmetric structure so as to generate a symmetric parasitic capacitance between the ground shield and the second metal winding. The ground shield can be inserted between the first and second metal windings to remove an asymmetrical parasitic capacitance so as to reduce a phase imbalance and a gain imbalance of an output value of the second metal winding. As a result, a highly balanced on-chip balun can be fabricated.
摘要:
A diode circuit having a passive element property, and an impedance modulator and a direct current (DC) source that use the diode circuit are provided. The diode circuit includes a first diode that generates a predetermined DC and alternating currents (AC) when a radio frequency (RF) signal is applied; and a DC path that is connected in parallel to the first diode, forms a predetermined loop and circulates the DC current within the loop. The DC path includes an inductor or an LC parallel resonator. The DC path includes a second diode that is disposed in the opposite direction to the first diode and connected to the first diode in parallel. The present invention can relieve difficulty in designing an RF circuit.
摘要:
A shredded parallel stacked inductor is provided. The shredded parallel stacked inductor includes a substrate, an oxide film formed on the substrate, metallic layers spirally formed within the oxide film, and vias formed in regions of the metallic layers to join the metallic layers in parallel, thus forming a spiral cavity in a center part of the metallic layers.
摘要:
A diode circuit having a passive element property, and an impedance modulator and a direct current (DC) source that use the diode circuit are provided. The diode circuit includes a first diode that generates a predetermined DC and alternating currents (AC) when a radio frequency (RF) signal is applied; and a DC path that is connected in parallel to the first diode, forms a predetermined loop and circulates the DC current within the loop. The DC path includes an inductor or an LC parallel resonator. The DC path includes a second diode that is disposed in the opposite direction to the first diode and connected to the first diode in parallel. The present invention can relieve difficulty in designing an RF circuit.
摘要:
A shredded parallel stacked inductor is provided. The shredded parallel stacked inductor includes a substrate, an oxide film formed on the substrate, metallic layers spirally formed within the oxide film, and vias formed in regions of the metallic layers to join the metallic layers in parallel, thus forming a spiral cavity in a center part of the metallic layers.
摘要:
A method of forming a fine pattern and a method of manufacturing a semiconductor device. The method of forming a fine pattern includes: forming a hard mask layer on a to-be-etched layer; forming on the hard mask layer a first mask pattern including a plurality of elongated openings that are arranged at predetermined intervals in a first direction and a second direction different from the first direction and are offset from each other in adjacent columns in the second direction; forming on the hard mask layer a second mask pattern including at least two linear openings that each pass through the elongated openings in the adjacent columns and extend in the first direction; forming a hard mask pattern by etching the hard mask layer by using the second mask pattern as an etch mask; and etching the to-be-etched layer by using the hard mask pattern.
摘要:
A transmitter and a signal amplifier are provided. The signal amplifier includes a digital-to-analog converter converting an input digital signal into an analog signal, a local oscillator signal generator outputting in-phase and quadrature-phase oscillator signals, a first mixer mixing the analog signal with the in-phase local oscillator signal to output an in-phase high frequency signal, a second mixer mixing the analog signal with the quadrature-phase local oscillator signal to output a quadrature-phase high frequency signal, a main amplifier amplifying the in-phase high frequency signal output from the first mixer, and an auxiliary amplifier amplifying the quadrature-phase high frequency signal output from the second mixer.
摘要:
A radio frequency (RF) communication system having a chaotic signal generator and a method of generating a chaotic signal. The RF communication system includes a chaotic signal generator which generates a chaotic signal having a plurality of frequency components at a predetermined frequency band, a modulator which generates a chaotic carrier by combining the chaotic signal with a data signal which indicates information, and a transmission circuit which includes an antenna to transmit the chaotic carrier made at the modulator. The frequency signal generator comprises an oscillator which converts a DC bias power into a high frequency power, and a resonating unit which generates a wideband signal having a plurality of frequency components by passing a predetermined frequency band of the high frequency power signal.
摘要:
Spread spectrum transmission of information is performed using chaotic signals. Direct chaotic communication systems in which information is input to chaotic signal generated directly in information transmission frequency band, are achieved by forming broadband information carrier necessary for transmission and using a chaotic dynamic system whose structure is synthesized in advance in accordance with predetermined characteristics of broadband information carrier to cause chaotic dynamic system to provide operation of forming the broadband information carrier in form of a chaotic information carrier having prescribed spectral characteristics. Modulating the chaotic information carrier is carried out by forming chaotic radio or optic chaotic pulses from chaotic information carrier, with predetermined time intervals between pulses in accordance with the transmitted information signal, and the reception and demodulation at the receiving side is carried out using a dynamic system matched, in behavior, with chaotic dynamic system of transmitting side.