Outdoor refillable bait station
    1.
    发明授权
    Outdoor refillable bait station 有权
    户外充装诱饵站

    公开(公告)号:US06729067B2

    公开(公告)日:2004-05-04

    申请号:US10230601

    申请日:2002-08-29

    IPC分类号: A01M2500

    摘要: A device for baiting insects which includes an anchor tube that is placed in the ground, a base plate that attaches to the anchor tube, a cover that attaches to the base plate, a bait cup placed in said anchor tube and that sits beneath the ground, and a termite media support rod that attaches to the bait cup and sits in the anchor tube, beneath the ground, the key to open the cover and access the bait, the anchor tube being molded into one integrated piece with a continuous spiral fin or threaded member that acts as a screw mechanism when inserting the station into the ground and the base plate, which sits at ground level, includes insect entry openings; a cover covers the base plate and bait cup, protecting the bait from the elements; and optionally a termite media support rod, which includes a disk molded on the bottom thereof used to hold material for termite monitoring.

    摘要翻译: 一种用于诱饵昆虫的装置,其包括放置在地面中的锚管,附接到锚管的基板,附接到基板的盖,放置在所述锚管中并位于地面下方的诱饵杯 ,以及白蚁介质支撑杆,其连接到诱饵杯并且位于锚固管中,在地下,打开盖并进入诱饵的钥匙,锚管被模制成具有连续螺旋翅片的一个集成件,或 螺纹构件在将工作站插入地面时用作螺钉机构,并且位于地面的基板包括昆虫入口; 盖子覆盖基板和诱饵杯,保护诱饵免受元素的伤害; 以及任选的白蚁介质支撑杆,其包括用于保持用于白蚁监测的材料的在其底部上模制的盘。

    Outdoor refillable bait station
    2.
    发明授权
    Outdoor refillable bait station 有权
    户外充装诱饵站

    公开(公告)号:US06474015B1

    公开(公告)日:2002-11-05

    申请号:US09626702

    申请日:2000-07-27

    IPC分类号: A01M120

    摘要: A device for baiting insects which includes an anchor tube that is placed in the ground, a base plate that attaches to the anchor tube, a cover that attaches to the base plate, a bait cup placed in said anchor tube and that sits beneath the ground, and a termite media support rod that attaches to the bait cup and sits in the anchor tube, beneath the ground, the key to open the cover and access the bait, the anchor tube being molded into one integrated piece with a continuous spiral fin or threaded member that acts as a screw mechanism when inserting the station into the ground and the base plate, which sits at ground level, includes insect entry openings; a cover covers the base plate and bait cup, protecting the bait from the elements; and optionally a termite media support rod, which includes a disk molded on the bottom thereof used to hold material for termite monitoring.

    摘要翻译: 一种用于诱饵昆虫的装置,其包括放置在地面中的锚管,附接到锚管的基板,附接到基板的盖,放置在所述锚管中并位于地面下方的诱饵杯 ,以及白蚁介质支撑杆,其连接到诱饵杯并且位于锚固管中,在地下,打开盖并进入诱饵的钥匙,锚管被模制成具有连续螺旋翅片的一个集成件,或 螺纹构件在将工作站插入地面时用作螺钉机构,并且位于地面的基板包括昆虫入口; 盖子覆盖基板和诱饵杯,保护诱饵免受元素的伤害; 以及任选的白蚁介质支撑杆,其包括用于保持用于白蚁监测的材料的在其底部上模制的盘。

    Preheating of chemical vapor deposition precursors
    3.
    发明申请
    Preheating of chemical vapor deposition precursors 审中-公开
    化学气相沉积前体预热

    公开(公告)号:US20050158997A1

    公开(公告)日:2005-07-21

    申请号:US11073798

    申请日:2005-03-07

    摘要: Chemical vapor deposition systems include elements to preheat reactant gases prior to reacting the gases to form layers of a material on a substrate, which provides devices and systems with deposited layers substantially free of residual compounds from the reaction process. Heating reactant gases prior to introduction to a reaction chamber may be used to improve physical characteristics of the resulting deposited layer, to improve the physical characteristics of the underlying substrate and/or to improve the thermal budget available for subsequent processing. One example includes the formation of a titanium nitride layer substantially free of ammonium chloride using reactant gases containing a titanium tetrachloride precursor and a ammonia precursor.

    摘要翻译: 化学气相沉积系统包括在使气体反应以在基底上形成材料层之前预热反应气体的元件,其向装置和系统提供基本上没有来自反应过程的残余化合物的沉积层。 在引入反应室之前加热反应物气体可以用于改善所得沉积层的物理特性,以改善下面的基底的物理特性和/或改善可用于后续处理的热量预算。 一个实例包括使用含有四氯化钛前体和氨前体的反​​应气体形成基本上不含氯化铵的氮化钛层。

    Thermal chemical vapor deposition methods, and thermal chemical vapor deposition systems
    4.
    发明授权
    Thermal chemical vapor deposition methods, and thermal chemical vapor deposition systems 有权
    热化学气相沉积方法和热化学气相沉积系统

    公开(公告)号:US07976897B2

    公开(公告)日:2011-07-12

    申请号:US11709509

    申请日:2007-02-21

    IPC分类号: C23C16/00

    摘要: One embodiment thermal chemical vapor deposition method includes exposing a substrate within a chamber to first and second deposition precursors effective to thermally chemical vapor deposit a material on the substrate, and exhausting unreacted first and second deposition precursors from the chamber through a vacuum pump via a first exhaust line comprising a filter. A reactive gas is flowed to the material on the substrate, with the reactive gas being reactive with the material. After flowing the reactive gas, an inert purge gas is flowed through the chamber and through the vacuum pump. The flowing of the inert purge gas to the vacuum pump is through a second exhaust line not comprising the filter. The exposing, the flowing of the reactive gas, and the flowing of the inert purge gas are repeated effective to deposit material of desired thickness on the substrate.

    摘要翻译: 一个实施方案的热化学气相沉积方法包括将室内的衬底暴露于第一和第二沉积前体,其有效地将化学气相沉积到衬底上的材料,以及通过真空泵经由第一 排气管线包括过滤器。 反应性气体流到衬底上的材料,反应气体与材料反应。 在流动反应气体后,惰性吹扫气体流过腔室并通过真空泵。 惰性吹扫气体流入真空泵是通过不包括过滤器的第二排气管线。 重复有效地将曝光,反应气体的流动和惰性吹扫气体的流动重叠在基板上沉积所需厚度的材料。

    Deposition system to provide preheating of chemical vapor deposition precursors
    5.
    发明授权
    Deposition system to provide preheating of chemical vapor deposition precursors 失效
    沉积系统为化学气相沉积前体提供预热

    公开(公告)号:US07204885B2

    公开(公告)日:2007-04-17

    申请号:US10209840

    申请日:2002-07-31

    摘要: Chemical vapor deposition systems include elements to preheat reactant gases prior to reacting the gases to form layers of a material on a substrate, which provides devices and systems with deposited layers substantially free of residual compounds from the reaction process. Heating reactant gases prior to introduction to a reaction chamber may be used to improve physical characteristics of the resulting deposited layer, to improve the physical characteristics of the underlying substrate and/or to improve the thermal budget available for subsequent processing.

    摘要翻译: 化学气相沉积系统包括在使气体反应以在基底上形成材料层之前预热反应气体的元件,其向装置和系统提供基本上没有来自反应过程的残余化合物的沉积层。 在引入反应室之前加热反应物气体可以用于改善所得沉积层的物理特性,以改善下面的基底的物理特性和/或改善可用于后续处理的热量预算。

    Thermal Chemical Vapor Deposition Methods, and Thermal Chemical Vapor Deposition Systems
    6.
    发明申请
    Thermal Chemical Vapor Deposition Methods, and Thermal Chemical Vapor Deposition Systems 审中-公开
    热化学气相沉积方法和热化学气相沉积系统

    公开(公告)号:US20110247561A1

    公开(公告)日:2011-10-13

    申请号:US13165412

    申请日:2011-06-21

    IPC分类号: C23C16/44

    摘要: One embodiment thermal chemical vapor deposition method includes exposing a substrate within a chamber to first and second deposition precursors effective to thermally chemical vapor deposit a material on the substrate, and exhausting unreacted first and second deposition precursors from the chamber through a vacuum pump via a first exhaust line comprising a filter. A reactive gas is flowed to the material on the substrate, with the reactive gas being reactive with the material. After flowing the reactive gas, an inert purge gas is flowed through the chamber and through the vacuum pump. The flowing of the inert purge gas to the vacuum pump is through a second exhaust line not comprising the filter. The exposing, the flowing of the reactive gas, and the flowing of the inert purge gas are repeated effective to deposit material of desired thickness on the substrate.

    摘要翻译: 一个实施方案的热化学气相沉积方法包括将室内的衬底暴露于第一和第二沉积前体,其有效地将化学气相沉积到衬底上的材料,以及通过真空泵经由第一 排气管线包括过滤器。 反应性气体流到衬底上的材料,反应气体与材料反应。 在流动反应气体后,惰性吹扫气体流过腔室并通过真空泵。 惰性吹扫气体流入真空泵是通过不包括过滤器的第二排气管线。 重复有效地将曝光,反应气体的流动和惰性吹扫气体的流动重叠在基板上沉积所需厚度的材料。

    Thermal chemical vapor deposition methods, and thermal chemical vapor deposition systems
    7.
    发明申请
    Thermal chemical vapor deposition methods, and thermal chemical vapor deposition systems 有权
    热化学气相沉积方法和热化学气相沉积系统

    公开(公告)号:US20080199613A1

    公开(公告)日:2008-08-21

    申请号:US11709509

    申请日:2007-02-21

    IPC分类号: C23C16/00

    摘要: One embodiment thermal chemical vapor deposition method includes exposing a substrate within a chamber to first and second deposition precursors effective to thermally chemical vapor deposit a material on the substrate, and exhausting unreacted first and second deposition precursors from the chamber through a vacuum pump via a first exhaust line comprising a filter. A reactive gas is flowed to the material on the substrate, with the reactive gas being reactive with the material. After flowing the reactive gas, an inert purge gas is flowed through the chamber and through the vacuum pump. The flowing of the inert purge gas to the vacuum pump is through a second exhaust line not comprising the filter. The exposing, the flowing of the reactive gas, and the flowing of the inert purge gas are repeated effective to deposit material of desired thickness on the substrate.

    摘要翻译: 一个实施方案的热化学气相沉积方法包括将室内的衬底暴露于第一和第二沉积前体,其有效地将化学气相沉积到衬底上的材料,以及通过真空泵经由第一 排气管线包括过滤器。 反应性气体流到衬底上的材料,反应气体与材料反应。 在流动反应气体后,惰性吹扫气体流过腔室并通过真空泵。 惰性吹扫气体流入真空泵是通过不包括过滤器的第二排气管线。 重复有效地将曝光,反应气体的流动和惰性吹扫气体的流动重叠在基板上沉积所需厚度的材料。

    Preheating of chemical vapor deposition precursors

    公开(公告)号:US07105441B2

    公开(公告)日:2006-09-12

    申请号:US10245673

    申请日:2002-09-17

    IPC分类号: C23C16/34

    摘要: Chemical vapor deposition systems include elements to preheat reactant gases prior to reacting the gases to form layers of a material on a substrate, which provides devices and systems with deposited layers substantially free of residual compounds from the reaction process. Heating reactant gases prior to introduction to a reaction chamber may be used to improve physical characteristics of the resulting deposited layer, to improve the physical characteristics of the underlying substrate and/or to improve the thermal budget available for subsequent processing. One example includes the formation of a titanium nitride layer substantially free of ammonium chloride using reactant gases containing a titanium tetrachloride precursor and a ammonia precursor.

    Preheating of chemical vapor deposition precursors
    9.
    发明授权
    Preheating of chemical vapor deposition precursors 有权
    化学气相沉积前体预热

    公开(公告)号:US06451692B1

    公开(公告)日:2002-09-17

    申请号:US09642976

    申请日:2000-08-18

    IPC分类号: C23C1634

    摘要: Chemical vapor deposition methods utilizing preheating of one or more of the reactant gases used to form deposited layers, chemical vapor deposition systems to perform the methods, and apparatus containing deposited layers produced using the methods. The reactant gases contain at least one chemical vapor deposition precursor. Heating one or more of the reactant gases prior to introduction to the reaction chamber may be used to improve physical characteristics of the resulting deposited layer, to improve the physical characteristics of the underlying substrate and/or to improve the thermal budget available for subsequent processing. One example includes the formation of a titanium nitride layer with reactant gases containing the precursors of titanium tetrachloride and ammonia. Preheating the reactant gases containing titanium tetrachloride and ammonia can reduce ammonium chloride levels in the resulting titanium nitride layer, thereby reducing or eliminating the need for post-processing to remove the ammonium chloride impurity. Chemical vapor deposition systems include one or more heaters to raise the temperature of the reactant gases prior to introduction to the reaction chamber.

    摘要翻译: 使用用于形成沉积层的一种或多种反应气体的预热的化学气相沉积方法,用于执行该方法的化学气相沉积系统以及含有使用该方法制备的沉积层的装置。 反应物气体含有至少一种化学气相沉积前体。 在引入反应室之前加热一种或多种反应气体可以用于改善所得沉积层的物理特性,以改善下面的衬底的物理特性和/或改进可用于后续处理的热预算。 一个实例包括用含有四氯化钛和氨的前体的反应气体形成氮化钛层。 预热含有四氯化钛和氨的反应物气体可以降低所得氮化钛层中的氯化铵含量,从而减少或消除后处理以除去氯化铵杂质的需要。 化学气相沉积系统包括一个或多个加热器,以在引入反应室之前提高反应气体的温度。