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1.发明申请公开(公告)号：US20070065733A1
公开(公告)日：2007-03-22
申请号：US11501916
申请日：2006-08-10
申请人： Jang Chen , Duan-Fu Hsu , Douglas Van Den Broeke , Jung Park , Thomas Laidig
发明人： Jang Chen , Duan-Fu Hsu , Douglas Van Den Broeke , Jung Park , Thomas Laidig
摘要： A method of generating a mask for printing a pattern including a plurality of features. The method includes the steps of obtaining data representing the plurality of features; and forming at least one of the plurality of features by etching a substrate to form a mesa and depositing a chrome layer over the entire upper surface of the mesa, where said mesa has a predetermined height.
摘要翻译： 一种生成用于打印包括多个特征的图案的掩模的方法。 该方法包括获取表示多个特征的数据的步骤; 以及通过蚀刻基底以形成台面并在所述台面的整个上表面上沉积铬层，形成所述多个特征中的至少一个，其中所述台面具有预定高度。
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2.发明申请Method, program product and apparatus for performing mask feature pitch decomposition for use in a multiple exposure process 有权用于进行多次曝光处理中使用的掩模特征间距分解的方法，程序产品和装置公开(公告)号：US20070031740A1
公开(公告)日：2007-02-08
申请号：US11472544
申请日：2006-06-22
申请人： Jang Chen , Duan-Fu Hsu , Douglas Van Den Broeke , Thomas Laidig
发明人： Jang Chen , Duan-Fu Hsu , Douglas Van Den Broeke , Thomas Laidig
IPC分类号： G03F1/00
CPC分类号： G03F7/70466 , G03F1/70
摘要： A method for forming exposure masks for imaging a target pattern having features to be imaged on a substrate in a multi-exposure process. The method includes the steps of generating a set of decomposition rules defining whether a given feature of the target pattern is assigned to a first exposure mask or a second exposure mask; applying the decomposition rules to each of the features in the target pattern so as to assign each of the features in the target pattern to one of the first exposure mask or second exposure mask; and generating the first exposure mask and the second exposure mask containing the respective features assigned to each mask.
摘要翻译： 一种形成曝光掩模的方法，用于在多曝光过程中对具有要被成像的特征的目标图案进行成像。 该方法包括以下步骤：产生一组分解规则，定义目标图案的给定特征是否被分配给第一曝光掩模或第二曝光掩模; 将分解规则应用于目标图案中的每个特征，以将目标图案中的每个特征分配给第一曝光掩模或第二曝光掩模之一; 以及生成包含分配给每个掩模的各个特征的第一曝光掩模和第二曝光掩模。
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3.发明授权Method and apparatus for providing optical proximity features to a reticle pattern for deep sub-wavelength optical lithography 有权用于将深度亚波长光学光刻的掩模版图案提供光学邻近特征的方法和装置公开(公告)号：US07247574B2
公开(公告)日：2007-07-24
申请号：US10756830
申请日：2004-01-14
申请人： Douglas Van Den Broeke , Jang Fung Chen , Thomas Laidig , Kurt E. Wampler , Stephen Duan-Fu Hsu
发明人： Douglas Van Den Broeke , Jang Fung Chen , Thomas Laidig , Kurt E. Wampler , Stephen Duan-Fu Hsu
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： G03F1/36 , G03F7/70441
摘要： A method of generating a mask design having optical proximity correction features disposed therein. The methods includes the steps of obtaining a desired target pattern having features to be imaged on a substrate; determining an interference map based on the target pattern, the interference map defining areas of constructive interference and areas of destructive interference between at least one of the features to be imaged and a field area adjacent the at least one feature; and placing assist features in the mask design based on the areas of constructive interference and the areas of destructive interference.
摘要翻译： 一种产生具有设置在其中的光学邻近校正特征的掩模设计的方法。 所述方法包括以下步骤：获得具有要在基底上成像的特征的期望目标图案; 确定基于所述目标图案的干涉图，所述干涉图定义建构性干扰的区域和要成像的至少一个要素与邻近所述至少一个特征的场区之间的相消干涉的区域; 并且基于建设性干扰的区域和破坏性干扰的区域将辅助特征放置在掩模设计中。
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4.发明授权Method and apparatus for providing optical proximity features to a reticle pattern for deep sub-wavelength optical lithography 有权用于将深度亚波长光学光刻的掩模版图案提供光学邻近特征的方法和装置公开(公告)号：US07774736B2
公开(公告)日：2010-08-10
申请号：US11714147
申请日：2007-03-06
申请人： Douglas Van Den Broeke , Jang Fung Chen , Thomas Laidig , Kurt E. Wampler , Stephen Duan-Fu Hsu
发明人： Douglas Van Den Broeke , Jang Fung Chen , Thomas Laidig , Kurt E. Wampler , Stephen Duan-Fu Hsu
IPC分类号： G06F17/50
CPC分类号： G03F1/36 , G03F7/70441
摘要： A method of generating a mask design having optical proximity correction features disposed therein. The methods includes the steps of obtaining a desired target pattern having features to be imaged on a substrate; determining an interference map based on the target pattern, the interference map defining areas of constructive interference and areas of destructive interference between at least one of the features to be imaged and a field area adjacent the at least one feature; and placing assist features in the mask design based on the areas of constructive interference and the areas of destructive interference.
摘要翻译： 一种产生具有设置在其中的光学邻近校正特征的掩模设计的方法。 所述方法包括以下步骤：获得具有要在基底上成像的特征的期望目标图案; 确定基于所述目标图案的干涉图，所述干涉图定义建构性干扰的区域和要成像的至少一个要素与邻近所述至少一个特征的场区域之间的相消干涉区域; 并且基于建设性干扰的区域和破坏性干扰的区域将辅助特征放置在掩模设计中。
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5.发明授权Method and apparatus for performing model based placement of phase-balanced scattering bars for sub-wavelength optical lithography 有权用于亚波长光学光刻的相位平衡散射棒的基于模型的放置方法和装置公开(公告)号：US07550235B2
公开(公告)日：2009-06-23
申请号：US10933496
申请日：2004-09-03
IPC分类号： G03F1/02
摘要： A method of generating a mask design having optical proximity correction features disposed therein. The methods includes the steps of obtaining a desired target pattern having features to be imaged on a substrate; determining a first interference map based on the target pattern, which defines areas of constructive interference between at least one of the features to be imaged and a field area adjacent the at least one feature; placing a first set of assist features having a first phase in the mask design based on the areas of constructive interference defined by the first interference map; determining a second interference map based on the first set of assist features, which defines areas of constructive interference between assist features of the first set of assist features and a field area adjacent at least one of the assist features of the first set of assist features; and placing a second set of assist features having a second phase in the mask design based on the areas of constructive interference defined by the second interference map, wherein the first phase does not equal the second phase.
摘要翻译： 一种产生具有设置在其中的光学邻近校正特征的掩模设计的方法。 所述方法包括以下步骤：获得具有要在基底上成像的特征的期望目标图案; 基于所述目标图案来确定第一干涉图，所述目标图案定义要成像的至少一个要素与邻近所述至少一个特征的场区域之间的建构性干扰的区域; 基于由第一干涉图定义的建构性干扰的区域，在掩模设计中放置具有第一相位的第一组辅助特征; 基于所述第一组辅助特征确定第二干涉图，所述第一组辅助特征限定所述第一组辅助特征的辅助特征之间的建构性干扰的区域和与所述第一组辅助特征的所述辅助特征中的至少一个邻近的场区域; 以及基于由所述第二干涉图定义的构成性干扰的区域，将具有第二相位的第二组辅助特征放置在所述掩模设计中，其中所述第一相位不等于所述第二相位。
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6.发明授权Scattering bar OPC application method for sub-half wavelength lithography patterning 有权散射棒用于半波长光刻图案的OPC应用方法公开(公告)号：US07354681B2
公开(公告)日：2008-04-08
申请号：US10880376
申请日：2004-06-30
IPC分类号： G03F9/00
CPC分类号： G03F1/36
摘要： A method of forming a mask having optical proximity correction features, which includes the steps of obtaining a target pattern of features to be imaged, expanding the width of the features to be imaged, modifying the mask to include assist features which are placed adjacent the edges of the features to be imaged, where the assist features have a length corresponding to the expanded width of the features to be imaged, and returning the features to be imaged from the expanded width to a width corresponding to the target pattern.
摘要翻译： 一种形成具有光学邻近校正特征的掩模的方法，其包括以下步骤：获得要成像的特征的目标图案，扩大要成像的特征的宽度，修改掩模以包括邻近边缘的辅助特征 的要成像的特征，其中辅助特征具有对应于要成像的特征的扩展宽度的长度，以及将要成像的特征从扩展宽度返回到对应于目标图案的宽度。
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7.发明授权Method, program product and apparatus for performing mask feature pitch decomposition for use in a multiple exposure process 有权用于进行多次曝光处理中使用的掩模特征间距分解的方法，程序产品和装置公开(公告)号：US08132130B2
公开(公告)日：2012-03-06
申请号：US11472544
申请日：2006-06-22
IPC分类号： G06F17/50
CPC分类号： G03F7/70466 , G03F1/70
摘要： A method for forming exposure masks for imaging a target pattern having features to be imaged on a substrate in a multi-exposure process. The method includes the steps of generating a set of decomposition rules defining whether a given feature of the target pattern is assigned to a first exposure mask or a second exposure mask; applying the decomposition rules to each of the features in the target pattern so as to assign each of the features in the target pattern to one of the first exposure mask or second exposure mask; and generating the first exposure mask and the second exposure mask containing the respective features assigned to each mask.
摘要翻译： 一种形成曝光掩模的方法，用于在多曝光过程中对具有要被成像的特征的目标图案进行成像。 该方法包括以下步骤：产生一组分解规则，定义目标图案的给定特征是否被分配给第一曝光掩模或第二曝光掩模; 将分解规则应用于目标图案中的每个特征，以将目标图案中的每个特征分配给第一曝光掩模或第二曝光掩模之一; 以及生成包含分配给每个掩模的各个特征的第一曝光掩模和第二曝光掩模。
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公开(公告)号：US08039180B2
公开(公告)日：2011-10-18
申请号：US13032590
申请日：2011-02-22
IPC分类号： G03F9/00
CPC分类号： G03F1/36
摘要： A method of forming a mask having optical proximity correction features, which includes the steps of obtaining a target pattern of features to be imaged, expanding—the width of the features to be imaged, modifying the mask to include assist features which are placed adjacent the edges of the features to be imaged, where the assist features have a length corresponding to the expanded width of the features to be imaged, and returning the features to be imaged from the expanded width to a width corresponding to the target pattern.
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9.发明授权公开(公告)号：US07892703B2
公开(公告)日：2011-02-22
申请号：US11501916
申请日：2006-08-10
摘要： A method of generating a mask for printing a pattern including a plurality of features. The method includes the steps of obtaining data representing the plurality of features; and forming at least one of the plurality of features by etching a substrate to form a mesa and depositing a chrome layer over the entire upper surface of the mesa, where said mesa has a predetermined height.
摘要翻译： 一种生成用于打印包括多个特征的图案的掩模的方法。 该方法包括获取表示多个特征的数据的步骤; 以及通过蚀刻基底以形成台面并在所述台面的整个上表面上沉积铬层，形成所述多个特征中的至少一个，其中所述台面具有预定高度。
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10.发明申请Scattering Bar OPC Application Method for Sub-Half Wavelength Lithography Patterning 失效散射条OPC半应用波长光刻图案的应用方法公开(公告)号：US20110143268A1
公开(公告)日：2011-06-16
申请号：US13032590
申请日：2011-02-22
CPC分类号： G03F1/36
摘要： A method of forming a mask having optical proximity correction features, which includes the steps of obtaining a target pattern of features to be imaged, expanding- the width of the features to be imaged, modifying the mask to include assist features which are placed adjacent the edges of the features to be imaged, where the assist features have a length corresponding to the expanded width of the features to be imaged, and returning the features to be imaged from the expanded width to a width corresponding to the target pattern.
摘要翻译： 一种形成具有光学邻近校正特征的掩模的方法，其包括以下步骤：获得要被成像的特征的目标图案，扩展要成像的特征的宽度，修改掩模以包括邻近放置的辅助特征 要成像的特征的边缘，其中辅助特征具有对应于要成像的特征的扩展宽度的长度，以及将要成像的特征从扩展宽度返回到对应于目标图案的宽度。
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