公开(公告)号：US08796781B2

公开(公告)日：2014-08-05

申请号：US13598364

申请日：2012-08-29

申请人： Jang Uk Lee ,  Sung Cheoul Kim ,  Kang Sik Choi ,  Suk Ki Kim

发明人： Jang Uk Lee ,  Sung Cheoul Kim ,  Kang Sik Choi ,  Suk Ki Kim

IPC分类号： H01L27/11

CPC分类号： H01L27/2436 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/16 ,  H01L45/1683

摘要： A semiconductor memory device includes a semiconductor substrate, an active region including a plurality of unit active regions and disposed over and spaced from the semiconductor substrate, a pair of word lines formed on a top surface and sides of the unit active region, a dummy word line disposed at a contact of the unit active regions and formed on top surfaces and sides of the unit active regions, a source region in the unit active region between the pair of word lines and electrically connected to the semiconductor substrate, drain regions formed in the unit active region between the pair of word lines and the dummy word line, and first storage layers formed on the drain regions and electrically connected to the drain regions.

公开(公告)号：US08691703B2

公开(公告)日：2014-04-08

申请号：US13585166

申请日：2012-08-14

申请人： Suk Ki Kim ,  Hyeon Soo Kim

发明人： Suk Ki Kim ,  Hyeon Soo Kim

IPC分类号： H01L21/302

CPC分类号： H01L21/76801 ,  H01L21/764 ,  H01L21/7682 ,  H01L27/11524

摘要： A semiconductor device is manufactured by, inter alia: forming second gate lines, arranged at wider intervals than each of first gate lines and first gate lines, over a semiconductor substrate; forming a multi-layered insulating layer over the entire surface of the semiconductor substrate including the first and the second gate lines; etching the multi-layered insulating layer so that a part of the multi-layered insulating layer remains between the first gate lines and the first and the second gate lines; forming mask patterns formed on the respective remaining multi-layered insulating layers and each formed to cover the multi-layered insulating layer between the second gate lines; and etching the multi-layered insulating layers remaining between the first gate lines and between the first and the second gate lines and not covered by the mask patterns so that the first and the second gate lines are exposed.

摘要翻译： 特别是通过在半导体衬底上形成比第一栅极线和第一栅极线的间隔更宽的第二栅极线制造半导体器件; 在包括第一和第二栅极线的半导体衬底的整个表面上形成多层绝缘层; 蚀刻多层绝缘层，使得多层绝缘层的一部分保留在第一栅极线与第一和第二栅极线之间; 形成在所述剩余的多层绝缘层上形成的掩模图案，并且形成为覆盖所述第二栅极线之间的所述多层绝缘层; 并且蚀刻保留在第一栅极线之间以及第一和第二栅极线之间的多层绝缘层，并且不被掩模图案覆盖，使得第一和第二栅极线暴露。

公开(公告)号：US07231152B2

公开(公告)日：2007-06-12

申请号：US10404966

申请日：2003-04-01

申请人： Suk Ki Kim ,  Joon Jea Sung ,  Geun Soon Kang

发明人： Suk Ki Kim ,  Joon Jea Sung ,  Geun Soon Kang

IPC分类号： H04B10/06

CPC分类号： G08C23/04

摘要： Disclosed is an infrared remote control receiver comprising a photo diode for converting an optical signal to an electrical signal, a semiconductor signal processing device for receiving the electrical from the photo diode, eliminating noise components from the electrical signal output from the photo diode and generating a pulse signal corresponding to a remote control signal transmitted from a remote control transmission device, and a micro computer for receiving the pulse signal from the semiconductor signal processing device and performing a remote control operation instructed by a user of the remote control transmission device by decoding the received pulse signal, wherein the semiconductor signal processing device is fabricated using CMOS devices fabrication processes.

摘要翻译： 公开了一种红外遥控接收器，其包括用于将光信号转换为电信号的光电二极管，用于从光电二极管接收电的半导体信号处理装置，消除从光电二极管输出的电信号的噪声分量， 对应于从远程控制传输设备发送的远程控制信号的脉冲信号;以及微计算机，用于从半导体信号处理设备接收脉冲信号，并且执行远程控制传输设备的用户指示的遥控操作， 接收脉冲信号，其中使用CMOS器件制造工艺制造半导体信号处理器件。