公开(公告)号：US08796781B2

公开(公告)日：2014-08-05

申请号：US13598364

申请日：2012-08-29

申请人： Jang Uk Lee ,  Sung Cheoul Kim ,  Kang Sik Choi ,  Suk Ki Kim

发明人： Jang Uk Lee ,  Sung Cheoul Kim ,  Kang Sik Choi ,  Suk Ki Kim

IPC分类号： H01L27/11

CPC分类号： H01L27/2436 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/16 ,  H01L45/1683

摘要： A semiconductor memory device includes a semiconductor substrate, an active region including a plurality of unit active regions and disposed over and spaced from the semiconductor substrate, a pair of word lines formed on a top surface and sides of the unit active region, a dummy word line disposed at a contact of the unit active regions and formed on top surfaces and sides of the unit active regions, a source region in the unit active region between the pair of word lines and electrically connected to the semiconductor substrate, drain regions formed in the unit active region between the pair of word lines and the dummy word line, and first storage layers formed on the drain regions and electrically connected to the drain regions.

公开(公告)号：US08252623B2

公开(公告)日：2012-08-28

申请号：US13402220

申请日：2012-02-22

申请人： Jang Uk Lee ,  Kang Sik Choi

发明人： Jang Uk Lee ,  Kang Sik Choi

IPC分类号： H01L21/00

CPC分类号： H01L27/2409 ,  G11C13/0004 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1233

摘要： A phase change memory device and an associated method of making same are presented. The phase change memory device, includes first wiring lines, second wiring lines, memory cells, and conduction contacts. The first wiring lines are arranged substantially in parallel to each other so that the first wiring lines are grouped into odd and even numbered first wiring lines. The memory cells are coupled to the first and second wiring lines. The conduction contacts coupled to the first wiring lines so that only one conduction contact is coupled to a center of a corresponding odd numbered first wiring line. Also only two corresponding conduction contacts are coupled to opposing edges of a corresponding even numbered first wiring line. Accordingly, the conduction contacts are arranged on the first wiring lines so that conduction contacts are not adjacent to each other with respect to immediately adjacent first wiring lines.

摘要翻译： 提出了一种相变存储器件及其制造方法。 相变存储器件包括第一布线，第二布线，存储单元和导电触点。 第一布线基本上彼此平行地布置，使得第一布线被分组成奇数和偶数编号的第一布线。 存储单元耦合到第一和第二布线。 耦合到第一布线的导通触点使得只有一个导电触点耦合到相应的奇数编号的第一布线的中心。 也只有两个对应的导电触点耦合到对应的偶数第一布线的相对边缘。 因此，导通触点设置在第一布线上，使得导电触点相对于紧邻的第一布线彼此不相邻。

公开(公告)号：US20100301305A1

公开(公告)日：2010-12-02

申请号：US12641535

申请日：2009-12-18

申请人： Jang Uk Lee ,  Kang Sik Choi

发明人： Jang Uk Lee ,  Kang Sik Choi

IPC分类号： H01L45/00 ,  H01L21/768 ,  H01L27/04

CPC分类号： H01L27/2409 ,  G11C13/0004 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1233

摘要： A phase change memory device and an associated method of making same are presented. The phase change memory device, includes first wiring lines, second wiring lines, memory cells, and conduction contacts. The first wiring lines are arranged substantially in parallel to each other so that the first wiring lines are grouped into odd and even numbered first wiring lines. The memory cells are coupled to the first and second wiring lines. The conduction contacts coupled to the first wiring lines so that only one conduction contact is coupled to a center of a corresponding odd numbered first wiring line. Also only two corresponding conduction contacts are coupled to opposing edges of a corresponding even numbered first wiring line. Accordingly, the conduction contacts are arranged on the first wiring lines so that conduction contacts are not adjacent to each other with respect to immediately adjacent first wiring lines.

摘要翻译： 提出了一种相变存储器件及其制造方法。 相变存储器件包括第一布线，第二布线，存储单元和导电触点。 第一布线基本上彼此平行地布置，使得第一布线被分组成奇数和偶数编号的第一布线。 存储单元耦合到第一和第二布线。 耦合到第一布线的导通触点使得只有一个导电触点耦合到相应的奇数编号的第一布线的中心。 也只有两个对应的导电触点耦合到对应的偶数第一布线的相对边缘。 因此，导通触点设置在第一布线上，使得导电触点相对于紧邻的第一布线彼此不相邻。

公开(公告)号：US08349636B2

公开(公告)日：2013-01-08

申请号：US12834141

申请日：2010-07-12

申请人： Jang Uk Lee ,  Kang Sik Choi ,  Hae Chan Park ,  Jin Hyock Kim ,  Ja Chun Ku

发明人： Jang Uk Lee ,  Kang Sik Choi ,  Hae Chan Park ,  Jin Hyock Kim ,  Ja Chun Ku

IPC分类号： H01L21/00

CPC分类号： H01L27/2409 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/1683

摘要： A method of manufacturing a phase change memory device is provided. A first insulating layer having a plurality of metal word lines spaced apart at a constant distance is formed on a semiconductor substrate. A plurality of line structures having a barrier metal layer, a polysilicon layer and a hard mask layer are formed to be overlaid on the plurality of metal word lines. A second insulating layer is formed between the line structures. Cross patterns are formed by etching the hard mask layers and the polysilicon layers of the line structures using mask patterns crossed with the metal word lines. A third insulating layer is buried within spaces between the cross patterns. Self-aligned phase change contact holes are formed and at the same time, diode patterns formed of remnant polysilicon layers are formed by selectively removing the hard mask layers constituting the cross patterns.

摘要翻译： 提供一种制造相变存储器件的方法。 在半导体衬底上形成具有以恒定距离隔开的多个金属字线的第一绝缘层。 形成具有阻挡金属层，多晶硅层和硬掩模层的多个线结构以覆盖在多个金属字线上。 在线路结构之间形成第二绝缘层。 通过使用与金属字线交叉的掩模图案蚀刻线结构的硬掩模层和多晶硅层来形成交叉图案。 第三绝缘层埋在交叉图案之间的空间内。 形成自对准的相变接触孔，同时，通过选择性地去除构成交叉图案的硬掩模层，形成由剩余多晶硅层形成的二极管图案。

公开(公告)号：US08124951B2

公开(公告)日：2012-02-28

申请号：US12641535

申请日：2009-12-18

申请人： Jang Uk Lee ,  Kang Sik Choi

发明人： Jang Uk Lee ,  Kang Sik Choi

IPC分类号： H01L47/00

CPC分类号： H01L27/2409 ,  G11C13/0004 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1233

摘要： A phase change memory device and an associated method of making same are presented. The phase change memory device, includes first wiring lines, second wiring lines, memory cells, and conduction contacts. The first wiring lines are arranged substantially in parallel to each other so that the first wiring lines are grouped into odd and even numbered first wiring lines. The memory cells are coupled to the first and second wiring lines. The conduction contacts coupled to the first wiring lines so that only one conduction contact is coupled to a center of a corresponding odd numbered first wiring line. Also only two corresponding conduction contacts are coupled to opposing edges of a corresponding even numbered first wiring line. Accordingly, the conduction contacts are arranged on the first wiring lines so that conduction contacts are not adjacent to each other with respect to immediately adjacent first wiring lines.

公开(公告)号：US08759979B2

公开(公告)日：2014-06-24

申请号：US13598303

申请日：2012-08-29

申请人： Jang Uk Lee

发明人： Jang Uk Lee

IPC分类号： H01L23/48 ,  H01L21/768

CPC分类号： H01L45/1253 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/16

摘要： A semiconductor memory device having a cell pattern formed on an interconnection and capable of reducing an interconnection resistance and a fabrication method thereof are provided. The semiconductor device includes a semiconductor substrate in which a cell area, a core area, and a peripheral area are defined and a bottom structure is formed, a conductive line formed on an entire structure of the semiconductor substrate, a memory cell pattern formed on the conductive line in the cell area, and a dummy conductive pattern formed on any one of the conductive line in the core area and the peripheral area.

摘要翻译： 提供一种具有形成在互连上并能够降低互连电阻的单元图形的半导体存储器件及其制造方法。 半导体器件包括其中限定了单元区域，核心区域和外围区域并形成底部结构的半导体基板，形成在半导体基板的整个结构上的导电线，形成在该半导体基板上的存储单元图案 电池区域中的导线，以及形成在芯区域和外围区域中的导电线中的任一个上的虚设导电图案。

公开(公告)号：US20100035540A1

公开(公告)日：2010-02-11

申请号：US12509805

申请日：2009-07-27

申请人： Sung Won KIM ,  Jae Min Seo ,  Jung Su Lee ,  Jae Kwang Lee ,  Jang Uk Lee

发明人： Sung Won KIM ,  Jae Min Seo ,  Jung Su Lee ,  Jae Kwang Lee ,  Jang Uk Lee

IPC分类号： H04H60/09

CPC分类号： H04B1/525 ,  H04B1/1036

摘要： The present invention relates to a portable terminal, and to a method and apparatus for improving broadcasting reception performance of the portable terminal by filtering a transmission frequency of a radio frequency unit introduced to a broadcasting reception path without experiencing broadcast signal loss. The filtering can be achieved using a filter that includes a variable capacitor in the broadcasting reception path. Accordingly, the transmission frequency of the radio frequency unit may be filtered without a broadcast signal loss. A capacitance of the variable capacitor may be controlled according to the broadcast channel.

摘要翻译： 便携式终端技术领域本发明涉及便携式终端，以及通过对引入到广播接收路径的射频单元的发送频率进行滤波而不经历广播信号丢失来提高便携式终端的广播接收性能的方法和装置。 可以使用在广播接收路径中包括可变电容器的滤波器来实现滤波。 因此，无线广播信号丢失可以对射频单元的发送频率进行滤波。 可以根据广播信道来控制可变电容器的电容。

公开(公告)号：US08283651B2

公开(公告)日：2012-10-09

申请号：US12635950

申请日：2009-12-11

申请人： Mi Ra Choi ,  Jang Uk Lee

发明人： Mi Ra Choi ,  Jang Uk Lee

IPC分类号： H01L47/00 ,  H01L29/02

CPC分类号： H01L27/0207 ,  H01L27/2409 ,  H01L27/2463 ,  H01L29/7833 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1675

摘要： A phase change memory device having an improved word line resistance and a fabrication method of making the same are presented. The phase change memory device includes a semiconductor substrate, a word line, an interlayer insulation film, a strapping line, a plurality of current paths, a switching element, and a phase change variable resistor. The word line is formed in a cell area of the semiconductor substrate. The interlayer insulation film formed on the word line. The strapping line is formed on the interlayer insulation film such that the strapping line overlaps on top of the word line. The current paths electrically connect together the word line with the strapping line. The switching element is electrically connected to the strapping line. The phase change variable resistor is electrically connected to the switching element.

摘要翻译： 提出了具有改进的字线电阻的相变存储器件及其制造方法。 相变存储器件包括半导体衬底，字线，层间绝缘膜，捆扎线，多个电流路径，开关元件和相变可变电阻器。 字线形成在半导体衬底的单元区域中。 形成在字线上的层间绝缘膜。 捆扎线形成在层间绝缘膜上，使得捆扎线与字线的顶部重叠。 电流路径将字线与捆扎线电连接在一起。 开关元件电连接到捆扎线。 相变可变电阻器电连接到开关元件。

公开(公告)号：US08219038B2

公开(公告)日：2012-07-10

申请号：US12509805

申请日：2009-07-27

申请人： Sung Won Kim ,  Jae Min Seo ,  Jung Su Lee ,  Jae Kwang Lee ,  Jang Uk Lee

发明人： Sung Won Kim ,  Jae Min Seo ,  Jung Su Lee ,  Jae Kwang Lee ,  Jang Uk Lee

IPC分类号： H04B17/00

CPC分类号： H04B1/525 ,  H04B1/1036

摘要： The present invention relates to a portable terminal, and to a method and apparatus for improving broadcasting reception performance of the portable terminal by filtering a transmission frequency of a radio frequency unit introduced to a broadcasting reception path without experiencing broadcast signal loss. The filtering can be achieved using a filter that includes a variable capacitor in the broadcasting reception path. Accordingly, the transmission frequency of the radio frequency unit may be filtered without a broadcast signal loss. A capacitance of the variable capacitor may be controlled according to the broadcast channel.

摘要翻译： 便携式终端技术领域本发明涉及便携式终端，以及通过对引入到广播接收路径的射频单元的发送频率进行滤波而不经历广播信号丢失来提高便携式终端的广播接收性能的方法和装置。 可以使用在广播接收路径中包括可变电容器的滤波器来实现滤波。 因此，无线广播信号丢失可以对射频单元的发送频率进行滤波。 可以根据广播信道来控制可变电容器的电容。

公开(公告)号：US08415197B2

公开(公告)日：2013-04-09

申请号：US13605167

申请日：2012-09-06

申请人： Mi Ra Choi ,  Jang Uk Lee

发明人： Mi Ra Choi ,  Jang Uk Lee

IPC分类号： H01L47/00 ,  H01L29/02 ,  H01L21/06

CPC分类号： H01L27/0207 ,  H01L27/2409 ,  H01L27/2463 ,  H01L29/7833 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1675

摘要： A phase change memory device having an improved word line resistance and a fabrication method of making the same are presented. The phase change memory device includes a semiconductor substrate, a word line, an interlayer insulation film, a strapping line, a plurality of current paths, a switching element, and a phase change variable resistor. The word line is formed in a cell area of the semiconductor substrate. The interlayer insulation film formed on the word line. The strapping line is formed on the interlayer insulation film such that the strapping line overlaps on top of the word line. The current paths electrically connect together the word line with the strapping line. The switching element is electrically connected to the strapping line. The phase change variable resistor is electrically connected to the switching element.

摘要翻译： 提出了具有改进的字线电阻的相变存储器件及其制造方法。 相变存储器件包括半导体衬底，字线，层间绝缘膜，捆扎线，多个电流路径，开关元件和相变可变电阻器。 字线形成在半导体衬底的单元区域中。 形成在字线上的层间绝缘膜。 捆扎线形成在层间绝缘膜上，使得捆扎线与字线的顶部重叠。 电流路径将字线与捆扎线电连接在一起。 开关元件电连接到捆扎线。 相变可变电阻器电连接到开关元件。