摘要:
A method and system for repairing defective memory in a semiconductor chip. The chip has memory locations, redundant memory, and a central location for ordered fuses. The ordered fuses identify in compressed format defective sections of the memory locations. The defective sections are replaceable by sections of the redundant memory. The ordered fuses have an associated a fuse bit pattern of bits which sequentially represents the defective sections in the compressed format. The method and system determines the order in which the memory locations are wired together; designs a shift register of latches through the memory locations in accordance with the order in which the memory locations are wired together; and associates each of the latches with a corresponding bit of an uncompressed bit pattern from which the fuse bit pattern is derived. The uncompressed bit pattern comprises a sequence of bits, representing the defective sections in uncompressed format.
摘要:
A method and system for repairing defective memory in a semiconductor chip. The chip has memory locations, redundant memory, and a central location for ordered fuses. The ordered fuses identify in compressed format defective sections of the memory locations. The defective sections are replaceable by sections of the redundant memory. The ordered fuses have an associated a fuse bit pattern of bits which sequentially represents the defective sections in the compressed format. The method and system determines the order in which the memory locations are wired together; designs a shift register of latches through the memory locations in accordance with the order in which the memory locations are wired together; and associates each of the latches with a corresponding bit of an uncompressed bit pattern from which the fuse bit pattern is derived. The uncompressed bit pattern comprises a sequence of bits, representing the defective sections in uncompressed format.
摘要:
It is, therefore, an object of the present invention to provide a structure and method of blowing fuses in a semiconductor chip that includes creating a design for the chip using a library, generating test data from the design, extracting the fuse related information from the design to prepare a fuse blow table, building the chip with the design data, testing the chip to produce failed data, comparing the fuse blow table to the failed data to determine the fuse blow location data, and blowing the selected fuses based on the fuse blow location data. The extraction method can include creating a fuse map file based upon a correlation between physical pin locations on the chip and different fuse macros within the design, wherein an order of fuses within the fuse blow table matches an order of fuses within the fuse map file.
摘要:
Disclosed are an object locator system, a method and a program storage device. In the embodiments, radio frequency identification (RFID) tags are on objects within a defined area and each RFID tag can be activated by an RF activation signal. When a request (e.g., a verbal or keyed-in request) to locate a specific object is received from a specific user, the required permission to locate the object is verified and, optionally, the identity of the specific user is authenticated. Once the required permission is verified and the identity of the specific user is authenticated, one of three RFID readers transmits an RF activation signal. RF response signals received back at the three RFID readers from the specific object's RFID tag are used to triangulate the position of the specific object. Once determined, the position is communicated (e.g., by map display, verbal message, or text message) to the specific user.
摘要:
Aspects of the invention provide for creating a built-in-self-test (BIST) organizational file for an integrated circuit (IC) chip. In one embodiment, a method includes: receiving a design file including a hierarchy of memory modules, each module including a plurality of memory wrappers; scanning each memory wrapper in each hierarchical level of memory modules for a BIST type; creating, based on the hierarchical level and the BIST type, an ordered list of memory wrappers; adding, based on the BIST type, a BIST engine for each memory wrapper listed in the ordered list; and adding a plurality of references statements to the ordered list to create the BIST organizational file.
摘要:
Disclosed are an object locator system, a method and a program storage device. In the embodiments, radio frequency identification (RFID) tags are on objects within a defined area and each RFID tag can be activated by an RF activation signal. When a request (e.g., a verbal or keyed-in request) to locate a specific object is received from a specific user, the required permission to locate the object is verified and, optionally, the identity of the specific user is authenticated. Once the required permission is verified and the identity of the specific user is authenticated, one of three RFID readers transmits an RF activation signal. RF response signals received back at the three RFID readers from the specific object's RFID tag are used to triangulate the position of the specific object. Once determined, the position is communicated (e.g., by map display, verbal message, or text message) to the specific user.
摘要:
Fuse macros of identical number of pages are serially arranged to form the same number of fusebay pages each having a length equal to the sum of the respective fuse macro page lengths. Each fuse macro has an enable latch configured to allow activation of one fuse macro at a time. A fusebay control device connected to a repair register may store data in and retrieve data from the fusebay. Next available fuse location is determined in programming mode so that data from a next repair pass may start where the last data ended.
摘要:
The invention provides a circuit that can observe data within shift registers without altering the data. The circuit includes selectors connected to the inputs and outputs of the shift registers. The selectors selectively connect the input with the output of a selected shift register to form a wiring loop for the selected shift register. A control device connected to the wiring loop uses the wiring loop to cause the data to be continually transferred from the output of the selected shift register to the input of the selected shift register and back through the selected shift register in a circular manner. The control device includes a counter used for determining the length of a selected shift register and a set of registers to store, for future use when rotating data in the shift registers, the length of each shift register. The control device also includes a data output accessible from outside the circuit. An observation wire is connected to the wiring loop, and the data passes from the wiring loop to the control device through the observation wire. The control device outputs data appearing on the wiring loop as the data is circulated through the selected shift register to permit data within the selected shift register to be observed outside the circuit without altering the data within the selected shift register.
摘要:
Multi-state restore circuitry that allows storage elements of a power-managed functional block to be loaded when the functional block is repowered up so that the functional block is ready for operation virtually immediately after voltage ramp-up of the functional block. The multi-state restore circuitry includes a restore-state detector for determining which one of a plurality of restore states of the functional block is applicable to a particular repowering-up of the functional block. The multi-state restore circuitry also includes restore logic that loads the storage elements as a function of the restore state determined by the restore-state detector.
摘要:
Methods and apparatuses for enabling a redundant memory element (20) during testing of a memory array (14). The memory array (14) includes general memory elements (18) and redundant memory elements (20). The general memory elements (18) are tested and any defective general memory elements (18) are replaced with redundant memory elements (20). The redundant memory elements (20) are tested only when they are enabled.