公开(公告)号：US20130329763A1

公开(公告)日：2013-12-12

申请号：US13840736

申请日：2013-03-15

申请人： Janine Kardokus ,  Thomas P. Duffey ,  William N. Partlo

发明人： Janine Kardokus ,  Thomas P. Duffey ,  William N. Partlo

IPC分类号： H01S3/038

CPC分类号： H01S3/0388 ,  C22C9/04 ,  H01S3/0971 ,  H01S3/225

摘要： Corrosion resistant electrodes are formed of brass that has been doped with phosphorus. The electrodes are formed of brass that contains about 100 ppm to about 1,000 ppm of phosphorus, and the brass has no visible microporosity at a magnification of 400×. The brass may be cartridge brass that contains about 30 weight percent of zinc and the balance copper. Corrosion resistant electrodes also may be formed by subjecting brass to severe plastic deformation to increase the resistance of the brass to plasma corrosion. The corrosion resistant electrodes can be used in laser systems to generate laser light.

摘要翻译： 耐腐蚀电极由掺杂有磷的黄铜形成。 电极由含有约100ppm至约1,000ppm磷的黄铜形成，并且黄铜在400×的放大倍数下不具有可见的微孔性。 黄铜可以是包含约30重量％的锌和余量铜的筒黄铜。 也可以通过对黄铜进行严格的塑性变形以增加黄铜对等离子体腐蚀的阻力而形成耐腐蚀电极。 耐腐蚀电极可用于激光系统产生激光。

公开(公告)号：US20070251819A1

公开(公告)日：2007-11-01

申请号：US11415620

申请日：2006-05-01

申请人： Janine Kardokus ,  Susan Strothers ,  Sally Woodward ,  Stephane Ferrasse

发明人： Janine Kardokus ,  Susan Strothers ,  Sally Woodward ,  Stephane Ferrasse

IPC分类号： C23C14/00

CPC分类号： C23C14/3414

摘要： The invention includes methods of forming hollow cathode magnetron sputtering targets. A metallic material is processed to produce an average grain size of less than or equal to about 30 microns and subsequently subjected to deep drawing. The invention includes three-dimensional sputtering targets comprising materials containing at least one element selected from Cu, Ti, and Ta. The target has an average grain size of from about 0.2 microns to about 30 microns throughout the target and a grain size standard deviation of less than or equal to 15% (1-σ). The invention includes three-dimensional targets comprising Al, having an average grain size of from 0.2 microns to less than 150 micron, with a grain size standard deviation of less than or equal to 15% (1-σ).

摘要翻译： 本发明包括形成空心阴极磁控溅射靶的方法。 处理金属材料以产生小于或等于约30微米的平均粒度，随后进行深冲。 本发明包括三维溅射靶，其包含含有选自Cu，Ti和Ta中的至少一种元素的材料。 目标物在整个目标物中的平均粒度为约0.2微米至约30微米，粒度标准偏差小于或等于15％（1-sigma）。 本发明包括具有平均粒度为0.2微米至小于150微米的Al的三维靶，其粒度标准偏差小于或等于15％（1-σ）。

公开(公告)号：US20060062686A1

公开(公告)日：2006-03-23

申请号：US10943369

申请日：2004-09-17

申请人： Michael Pinter ,  Janine Kardokus ,  Wuwen Yi

发明人： Michael Pinter ,  Janine Kardokus ,  Wuwen Yi

IPC分类号： C22C9/00

CPC分类号： C22C9/00 ,  C23C14/3407 ,  H01J37/3435

摘要： A PVD target support member includes an alloy containing at least 90 wt % of a first metal and also containing a second metal and a third metal. The second metal increases electrical resistivity compared to an otherwise identical alloy lacking the second metal. The third metal increase tensile and/or yield strength compared to an otherwise identical alloy lacking the third metal. The alloy may exhibit a thermal stability during diffusion bonding to a target that meets or exceeds thermal stabilities of the otherwise identical alloy lacking the second metal and the otherwise identical alloy lacking the third metal. Another PVD target support member includes an alloy containing at least 90 wt % copper and also containing titanium and silver. The support member may be a backing plate.

摘要翻译： PVD靶支撑构件包括含有至少90重量％的第一金属并且还含有第二金属和第三金属的合金。 与没有第二金属的其他相同的合金相比，第二种金属提高了电阻率。 与缺少第三种金属的其他相同的合金相比，第三种金属增加了拉伸和/或屈服强度。 该合金可以在扩散接合到目标物时表现出热稳定性，该热稳定性满足或超过缺少第二金属的另外相同的合金的热稳定性，以及缺少第三种金属的其它相同的合金。 另一个PVD靶支撑件包括含有至少90wt％铜并且还含有钛和银的合金。 支撑构件可以是背板。

公开(公告)号：US20080289958A1

公开(公告)日：2008-11-27

申请号：US12109816

申请日：2008-04-25

申请人： Janine Kardokus ,  Michael Pinter ,  Michael Payton ,  Steven(Chi Tse) Wu ,  Jared Akins ,  Werner Hort

发明人： Janine Kardokus ,  Michael Pinter ,  Michael Payton ,  Steven(Chi Tse) Wu ,  Jared Akins ,  Werner Hort

IPC分类号： C23C14/34

CPC分类号： C23C14/3414 ,  C22F1/18

摘要： Sputtering targets having a reduced burn-in time are disclosed that comprise: a) a heat-modified surface material having a substantially uniform crystallographic orientation, wherein at least part of the surface material was melted during heat-treatment, and b) a core material having an average grain size. Sputtering targets are also disclosed that include a heat-modified surface material having network of shallow trenches, alternating rounded peaks and valleys in the surface of the target or a combination thereof, wherein at least part of the surface material was melted during heat-treatment, and a core material having an average grain size. Methods of producing sputtering targets having reduced burn-in times comprises: a) providing a sputtering target comprising a sputtering surface having a sputter material and a crystal lattice, and b) heat-modifying the sputtering surface in order to melt at least part of the surface material and modify the crystal lattice. Methods of producing a sputtering target having a reduced burn-in time are also disclosed comprising: providing a sputtering target having a sputtering surface, wherein the sputtering surface comprises a damage layer, and modifying the sputtering surface by deplating a layer of material, pulsed-plating a layer of material or a combination thereof

摘要翻译： 公开了具有减少的老化时间的溅射靶，其包括：a）具有基本上均匀的结晶取向的热改性表面材料，其中至少部分表面材料在热处理期间熔化，以及b）芯材料 具有平均粒度。 还公开了溅射靶，其包括在靶的表面中具有浅沟槽，交替的圆形峰和谷的热改性表面材料或其组合，其中至少部分表面材料在热处理期间熔化， 和具有平均粒径的芯材。 制造具有减少的烧结时间的溅射靶的方法包括：a）提供溅射靶，其包括具有溅射材料和晶格的溅射表面，以及b）对所述溅射表面进行加热改性以熔化至少部分 表面材料并修饰晶格。 还公开了具有降低的烧成时间的溅射靶的制造方法，包括：提供具有溅射表面的溅射靶，其中所述溅射表面包括损伤层，并且通过将材料层去掉，来改变溅射表面， 电镀一层材料或其组合

公开(公告)号：US20070084527A1

公开(公告)日：2007-04-19

申请号：US11255044

申请日：2005-10-19

申请人： Stephane Ferrasse ,  Frank Alford ,  Janine Kardokus ,  Susan Strothers ,  Saket Chadda

发明人： Stephane Ferrasse ,  Frank Alford ,  Janine Kardokus ,  Susan Strothers ,  Saket Chadda

IPC分类号： C22C21/00 ,  C22F1/04

CPC分类号： C22F1/04 ,  C22F1/00

摘要： The invention includes components comprising an alloy containing a base metal and less than or equal to 30% alloying elements. The material has a grain size of less than or equal to about 30 microns and an absence of voids and inclusions of a size greater than 1 micron. The components have a yield strength at least 50% greater than the identical alloy composition in the 0 temper condition. Where the material is heat treatable, the yield strength is at least 10% greater than the identical composition in the T6 temper condition. The invention includes a method of producing components by casting and initial treatment to form a billet. The billet is subjected to equal channel angular extrusion and subsequent annealing at a temperature of less than or equal to 0.85 times the minimum temperature for inducing growth of submicron grains to over 1 micron.

摘要翻译： 本发明包括包含含有贱金属和小于或等于30％的合金元素的合金的组分。 该材料具有小于或等于约30微米的晶粒尺寸，并且没有空隙和尺寸大于1微米的夹杂物。 这些组分的屈服强度比0回火条件下相同的合金组分大至少50％。 在材料是可热处理的情况下，屈服强度比T6回火条件下的相同成分大至少10％。 本发明包括通过铸造和初始处理来生产组件以形成坯料的方法。 在小于或等于诱导亚微米颗粒生长超过1微米的最低温度的0.85倍的温度下，对坯料进行等通道角挤压和随后的退火。

公开(公告)号：US20070007505A1

公开(公告)日：2007-01-11

申请号：US11178202

申请日：2005-07-07

申请人： Ravi Rastogi ,  Janine Kardokus ,  Diana Morales

发明人： Ravi Rastogi ,  Janine Kardokus ,  Diana Morales

IPC分类号： H01L29/02

CPC分类号： C04B35/547 ,  C04B35/645 ,  C04B35/6455 ,  C04B2235/40 ,  C04B2235/408 ,  C04B2235/42 ,  C04B2235/77 ,  C23C14/3414

摘要： A chalcogenide PVD component includes a bonded mixture of particles of a first solid and a second solid. The first solid contains a first compound. The particle mixture may exhibit a minimum solid phase change temperature greater than a solid phase change phase temperature of an element in the first compound. The particle mixture may exhibit a maximum solid phase change temperature less than a solid phase change temperature of an element in the first compound. The first compound may be a congruently melting line compound. The bonded mixture may lack melt regions or sublimation gaps. The particle mixture may exhibit a bulk formula including three or more elements. The particle mixture may include two or more line compounds.

摘要翻译： 硫族化物PVD组分包括第一固体和第二固体的颗粒的粘合混合物。 第一固体含有第一种化合物。 颗粒混合物可以表现出比第一化合物中元素的固相变温相的最小固相变温度。 颗粒混合物可以表现出小于第一化合物中元素的固相变温度的最大固相变温度。 第一种化合物可以是一致的熔融线化合物。 粘结的混合物可能缺乏熔融区域或升华间隙。 颗粒混合物可以显示包括三个或更多个元素的主体配方。 颗粒混合物可以包括两种或更多种线型化合物。

公开(公告)号：US20050279637A1

公开(公告)日：2005-12-22

申请号：US10874848

申请日：2004-06-22

申请人： Michael Pinter ,  Janine Kardokus

发明人： Michael Pinter ,  Janine Kardokus

IPC分类号： C23C14/34 ,  C25D1/00 ,  C25D3/50 ,  C25D7/04

CPC分类号： C25D7/04 ,  C23C14/3414 ,  C25D1/00 ,  C25D3/50

摘要： The invention includes a method of forming a target/backing plate assembly in which a backing plate construction is provided and a ruthenium-containing target is electrolytically deposited onto the backing plate construction. The backing plate construction can be in the form of a container shape having an interior region, and the ruthenium-containing target can be electrically deposited within the interior region of the container shape. The invention also includes target/backing plate constructions which have ruthenium-containing targets. The invention also includes a method of electrolytically processing ruthenium. A cathode is provided and an electrically conductive sacrificial material is provided over the cathode. A ruthenium-containing material is electrolytically deposited on the sacrificial material. The sacrificial material and the ruthenium-containing material are removed from the cathode, and then the ruthenium-containing material is separated from the sacrificial material.

摘要翻译： 本发明包括一种形成目标/背板组件的方法，其中提供背板结构，并将含钌靶靶电解沉积到背板结构上。 背板结构可以是具有内部区域的容器形式，并且含钌靶可以在容器形状的内部区域内电沉积。 本发明还包括具有含钌靶的靶/背板结构。 本发明还包括电解处理钌的方法。 提供阴极并且在阴极上提供导电牺牲材料。 将含钌材料电解沉积在牺牲材料上。 从阴极去除牺牲材料和含钌材料，然后将含钌材料与牺牲材料分离。

公开(公告)号：US06765178B2

公开(公告)日：2004-07-20

申请号：US10025152

申请日：2001-12-18

申请人： Quanyuan Shang ,  Janine Kardokus ,  Akihiro Hosokawa

发明人： Quanyuan Shang ,  Janine Kardokus ,  Akihiro Hosokawa

IPC分类号： F27B514

CPC分类号： H01L21/67109

摘要： Embodiments of the invention generally provide an apparatus and a method for providing a uniform thermal profile to a plurality of substrates during heat processing. In one embodiment, a cassette containing one or more heated substrate supports is moveably disposed within a heating chamber having an about uniform thermal profile therein to more uniformly heat the substrates.

摘要翻译： 本发明的实施例通常提供一种用于在热处理期间向多个基板提供均匀热分布的装置和方法。 在一个实施例中，包含一个或多个加热的衬底支撑件的盒可移动地设置在其中具有大致均匀的热分布的加热室内，以更均匀地加热衬底。

公开(公告)号：US20080173541A1

公开(公告)日：2008-07-24

申请号：US11656705

申请日：2007-01-22

申请人： Eal Lee ,  Werner Hort ,  Janine Kardokus ,  Susan D. Strothers ,  Kim Jaeyeon

发明人： Eal Lee ,  Werner Hort ,  Janine Kardokus ,  Susan D. Strothers ,  Kim Jaeyeon

IPC分类号： C23C14/00 ,  B23P11/00

CPC分类号： C23C14/3407 ,  H01J37/3426 ,  H01J37/3491 ,  Y10T29/49826

摘要： A sputtering target is described herein that comprises: a) a target surface component comprising a target material; b) a core backing component having a coupling surface and a back surface, wherein the coupling surface is coupled to the target surface component; and c) at least one surface area feature coupled to or located in the back surface of the core backing component, wherein the surface area feature increases the resistance, resistivity or a combination thereof of the core backing component. Methods of forming a sputtering target are also described that comprises: a) providing a target surface component comprising a surface material; b) providing a core backing component comprising a backing material and having a coupling surface and a back surface; c) providing at least one surface area feature coupled to or located in the back surface of the core backing component, wherein the surface area feature increases the resistance, resistivity or a combination thereof of the core backing component; and d) coupling the surface target material to the coupling surface of the core backing material.

摘要翻译： 本文描述了一种溅射靶，其包括：a）包含目标材料的靶表面组分; b）具有联接表面和后表面的芯背衬部件，其中所述耦合表面耦合到所述目标表面部件; 以及c）至少一个表面区域特征，其耦合到或位于所述芯背衬部件的后表面中，其中所述表面区域特征增加所述芯背衬部件的电阻，电阻率或其组合。 还描述了形成溅射靶的方法，其包括：a）提供包含表面材料的靶表面组分; b）提供包括背衬材料并具有耦合表面和背表面的芯背衬部件; c）提供耦合到或位于所述芯背衬组件的后表面中的至少一个表面区域特征，其中所述表面区域特征增加所述芯背衬组件的电阻，电阻率或其组合; 以及d）将表面目标材料耦合到芯衬垫材料的耦合表面。

公开(公告)号：US20070166828A1

公开(公告)日：2007-07-19

申请号：US11331489

申请日：2006-01-13

申请人： Susan Strothers ,  Janine Kardokus ,  Brett Clark

发明人： Susan Strothers ,  Janine Kardokus ,  Brett Clark

IPC分类号： G01N33/20

CPC分类号： G01N33/20

摘要： The invention includes a method of detecting impurities in a metal-containing article. A portion of metal material is removed from a metal article and is solubilized in an acid or base-comprising liquid to produce a liquid sample. The liquid sample is subjected to an incident laser beam and light scattered from the sample is detected. The invention includes a method of analyzing a physical vapor deposition target material. A portion of target material is removed from the target and is rinsed with an acid-comprising solution. The portion of target material is dissolved to produce a liquid sample. The sample is subjected to an incident laser beam and scatter of the laser beam is detected to determine the number of particles present in the sample within a particular size range.

摘要翻译： 本发明包括检测含金属物品中的杂质的方法。 将一部分金属材料从金属制品中除去并溶解在含酸或碱的液体中以产生液体样品。 对液体样品进行入射的激光束，并且检测从样品散射的光。 本发明包括分析物理气相沉积靶材料的方法。 将目标材料的一部分从靶上除去并用含酸溶液冲洗。 将目标材料的部分溶解以产生液体样品。 对样品进行入射激光束，并且检测激光束的散射以确定在特定尺寸范围内存在于样品中的颗粒的数量。