公开(公告)号：US20060065634A1

公开(公告)日：2006-03-30

申请号：US11228460

申请日：2005-09-16

申请人： Jannes Van Den Berg

发明人： Jannes Van Den Berg

IPC分类号： C03C15/00

CPC分类号： C04B41/87 ,  C04B41/009 ,  C04B41/5059 ,  C04B41/53 ,  C04B41/91 ,  C23C16/325 ,  C23C16/4581 ,  C23C16/56 ,  C04B41/4531 ,  C04B41/0072 ,  C04B41/5338 ,  C04B35/565

摘要： The surface of a susceptor for supporting a substrate during semiconductor processing is sandblasted and/or treated with a chemical etch in a low temperature cleaning treatment. The cleaning treatment can be performed after grinding the susceptor to the desired dimensions and smoothness during the manufacture of the susceptor. The sandblasting or chemical etch removes contaminants remaining after the grinding. As a result, these contaminants are no longer able to contaminate substrates that are later processed on the susceptor. In addition, a silicon carbide finish film can be deposited on the susceptor to form a surface with a desired roughness and to act as a diffusion barrier to prevent impurities in the susceptor from diffusing out and contaminating substrates supported on the susceptors.

摘要翻译： 用于在半导体处理期间支撑衬底的基座的表面在低温清洁处理中用化学蚀刻喷砂和/或处理。 在基座的制造过程中，可以在将基座磨削至期望的尺寸和平滑度之后执行清洁处理。 喷砂或化学蚀刻去除研磨后残留的污染物。 结果，这些污染物不再能够污染后续在基座处理的基底。 此外，碳化硅精加工膜可以沉积在基座上以形成具有所需粗糙度的表面，并且用作扩散阻挡层，以防止基座中的杂质扩散并污染支撑在基座上的基板。

公开(公告)号：US20060060145A1

公开(公告)日：2006-03-23

申请号：US11081358

申请日：2005-03-15

申请人： Jannes Van Den Berg ,  Ernst H.A. Granneman

发明人： Jannes Van Den Berg ,  Ernst H.A. Granneman

IPC分类号： H01L21/306 ,  C23C16/00

CPC分类号： H01L21/67109 ,  C30B31/14 ,  H01L21/67306 ,  H01L21/68742

摘要： Susceptors plates are formed having a minimum surface roughness. The wafer contact surfaces of the susceptor plates have a surface roughness Ra value of about 0.6 μm or more. The contact surface is otherwise flat and lacking in large protrusions. In addition, the susceptors have a low transparency to more closely match the heat absorption properties of the supported wafer. Advantageously, heat transfer from the susceptors to the wafers is highly uniform. Thus, using these susceptors to support the wafers during high temperature semiconductor processing (e.g., at>1000° C.) results in no or few crystallographic slip lines being formed on the wafers.

摘要翻译： 形成具有最小表面粗糙度的感受器板。 基座板的晶片接触表面具有约0.6μm或更大的表面粗糙度Ra值。 接触表面是平坦的，并且没有大的突起。 此外，感受体具有低透明度以更紧密地匹配被支撑晶片的吸热性能。 有利地，从基座到晶片的热传递是高度均匀的。 因此，在高温半导体处理（例如，> 1000℃）下使用这些感受器来支撑晶片导致在晶片上没有形成或几个晶体学滑移线。