公开(公告)号：US20150212364A1

公开(公告)日：2015-07-30

申请号：US14679154

申请日：2015-04-06

Applicant: Japan Display Inc. ,  Panasonic Liquid Crystal Display Device Co., Ltd.

Inventor： Hideo TANABE ,  Masaru TAKABATAKE ,  Toshiki KANEKO ,  Atsushi HASEGAWA ,  Hiroko SEHATA

IPC: G02F1/1333 ,  H01L27/12 ,  G02F1/1368 ,  H01L29/786

CPC classification number: G02F1/133345 ,  G02F1/133305 ,  G02F1/133504 ,  G02F1/133555 ,  G02F1/134363 ,  G02F1/136213 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2001/13685 ,  H01L27/124 ,  H01L27/1248 ,  H01L29/78675

Abstract: A LCD device having a large pixel holding capacitance includes opposedly facing first and second substrates, and liquid crystal between them. The first substrate includes a video signal line, a pixel electrode, a thin film transistor having a first electrode connected to the video signal line and a second electrode connected to the pixel electrode, a first silicon nitride film formed above the second electrode, an organic insulation film above the first silicon nitride film, a capacitance electrode above the organic insulation film, and a second silicon nitride film above the capacitance electrode and below the pixel electrode. A contact hole etched in both the first and second silicon nitride films connects the second electrode and the pixel electrode to each other. A holding capacitance is formed by the pixel electrode, the second silicon nitride film and the capacitance electrode.

Abstract translation: 具有大像素保持电容的LCD装置包括相对的第一和第二基板以及它们之间的液晶。 第一基板包括视频信号线，像素电极，具有连接到视频信号线的第一电极的薄膜晶体管和连接到像素电极的第二电极，形成在第二电极上方的第一氮化硅膜，有机物 第一氮化硅膜上方的绝缘膜，有机绝缘膜上方的电容电极，以及电容电极上方和像素电极下方的第二氮化硅膜。 在第一和第二氮化硅膜中蚀刻的接触孔将第二电极和像素电极彼此连接。 保持电容由像素电极，第二氮化硅膜和电容电极形成。

公开(公告)号：US20230036779A1

公开(公告)日：2023-02-02

申请号：US17961617

申请日：2022-10-07

Applicant: Japan Display Inc. ,  Panasonic Liquid Crystal Display Co., Ltd.

Inventor： Hideo TANABE ,  Masaru TAKABATAKE ,  Toshiki KANEKO ,  Atsushi HASEGAWA ,  Hiroko SEHATA

IPC: G02F1/1333 ,  G02F1/1362 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/786

Abstract: A LCD device having a large pixel holding capacitance includes opposedly facing first and second substrates, and liquid crystal between them. The first substrate includes a video signal line, a pixel electrode, a thin film transistor having a first electrode connected to the video signal line and a second electrode connected to the pixel electrode, a first silicon nitride film formed above the second electrode, an organic insulation film above the first silicon nitride film, a capacitance electrode above the organic insulation film, and a second silicon nitride film above the capacitance electrode and below the pixel electrode. A contact hole etched in both the first and second silicon nitride films connects the second electrode and the pixel electrode to each other. A holding capacitance is formed by the pixel electrode, the second silicon nitride film and the capacitance electrode.

公开(公告)号：US20210181569A1

公开(公告)日：2021-06-17

申请号：US17187945

申请日：2021-03-01

Applicant: Japan Display Inc. ,  Panasonic Liquid Crystal Display Co., Ltd.

Inventor： Hideo TANABE ,  Masaru TAKABATAKE ,  Toshiki KANEKO ,  Atsushi HASEGAWA ,  Hiroko SEHATA

IPC: G02F1/1333 ,  G02F1/1362 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/786

Abstract: A LCD device having a large pixel holding capacitance includes opposedly facing first and second substrates, and liquid crystal between them. The first substrate includes a video signal line, a pixel electrode, a thin film transistor having a first electrode connected to the video signal line and a second electrode connected to the pixel electrode, a first silicon nitride film formed above the second electrode, an organic insulation film above the first silicon nitride film, a capacitance electrode above the organic insulation film, and a second silicon nitride film above the capacitance electrode and below the pixel electrode. A contact hole etched in both the first and second silicon nitride films connects the second electrode and the pixel electrode to each other. A holding capacitance is formed by the pixel electrode, the second silicon nitride film and the capacitance electrode.

公开(公告)号：US20200150484A1

公开(公告)日：2020-05-14

申请号：US16735388

申请日：2020-01-06

Applicant: Japan Display Inc. ,  Panasonic Liquid Crystal Display Co., Ltd.

Inventor： Hideo TANABE ,  Masaru TAKABATAKE ,  Toshiki KANEKO ,  Atsushi HASEGAWA ,  Hiroko SEHATA

IPC: G02F1/1333 ,  G02F1/1362 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/786

Abstract: A LCD device having a large pixel holding capacitance includes opposedly facing first and second substrates, and liquid crystal between them. The first substrate includes a video signal line, a pixel electrode, a thin film transistor having a first electrode connected to the video signal line and a second electrode connected to the pixel electrode, a first silicon nitride film formed above the second electrode, an organic insulation film above the first silicon nitride film, a capacitance electrode above the organic insulation film, and a second silicon nitride film above the capacitance electrode and below the pixel electrode. A contact hole etched in both the first and second silicon nitride films connects the second electrode and the pixel electrode to each other. A holding capacitance is formed by the pixel electrode, the second silicon nitride film and the capacitance electrode.

公开(公告)号：US20160147110A1

公开(公告)日：2016-05-26

申请号：US15002453

申请日：2016-01-21

Applicant: Japan Display Inc. ,  Panasonic Liquid Crystal Display Co., Ltd.

Inventor： Hideo TANABE ,  Masaru TAKABATAKE ,  Toshiki KANEKO ,  Atsushi HASEGAWA ,  Hiroko SEHATA

IPC: G02F1/1333

CPC classification number: G02F1/133345 ,  G02F1/133305 ,  G02F1/133504 ,  G02F1/133555 ,  G02F1/134363 ,  G02F1/136213 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2001/13685 ,  H01L27/124 ,  H01L27/1248 ,  H01L29/78675

Abstract: A LCD device having a large pixel holding capacitance includes opposedly facing first and second substrates, and liquid crystal between them. The first substrate includes a video signal line, a pixel electrode, a thin film transistor having a first electrode connected to the video signal line and a second electrode connected to the pixel electrode, a first silicon nitride film formed above the second electrode, an organic insulation film above the first silicon nitride film, a capacitance electrode above the organic insulation film, and a second silicon nitride film above the capacitance electrode and below the pixel electrode. A contact hole etched in both the first and second silicon nitride films connects the second electrode and the pixel electrode to each other. A holding capacitance is formed by the pixel electrode, the second silicon nitride film and the capacitance electrode.

公开(公告)号：US20140132902A1

公开(公告)日：2014-05-15

申请号：US14156957

申请日：2014-01-16

Applicant: Panasonic Liquid Crystal Display Co., Ltd. ,  Japan Display Inc.

Inventor： Hideo TANABE ,  Masaru TAKABATAKE ,  Toshiki KANEKO ,  Atsushi HASEGAWA ,  Hiroko SEHATA

IPC: G02F1/1333

CPC classification number: G02F1/133345 ,  G02F1/133305 ,  G02F1/133504 ,  G02F1/133555 ,  G02F1/134363 ,  G02F1/136213 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2001/13685 ,  H01L27/124 ,  H01L27/1248 ,  H01L29/78675

Abstract: A LCD device having a large pixel holding capacitance includes opposedly facing first and second substrates, and liquid crystal between them. The first substrate includes a video signal line, a pixel electrode, a thin film transistor having a first electrode connected to the video signal line and a second electrode connected to the pixel electrode, a first silicon nitride film formed above the second electrode, an organic insulation film above the first silicon nitride film, a capacitance electrode above the organic insulation film, and a second silicon nitride film above the capacitance electrode and below the pixel electrode. A contact hole etched in both the first and second silicon nitride films connects the second electrode and the pixel electrode to each other. A holding capacitance is formed by the pixel electrode, the second silicon nitride film and the capacitance electrode.

Abstract translation: 具有大像素保持电容的LCD装置包括相对的第一和第二基板以及它们之间的液晶。 第一基板包括视频信号线，像素电极，具有连接到视频信号线的第一电极的薄膜晶体管和连接到像素电极的第二电极，形成在第二电极上方的第一氮化硅膜，有机物 第一氮化硅膜上方的绝缘膜，有机绝缘膜上方的电容电极，以及电容电极上方和像素电极下方的第二氮化硅膜。 在第一和第二氮化硅膜中蚀刻的接触孔将第二电极和像素电极彼此连接。 保持电容由像素电极，第二氮化硅膜和电容电极形成。

公开(公告)号：US20190049775A1

公开(公告)日：2019-02-14

申请号：US16161988

申请日：2018-10-16

Applicant: Japan Display Inc. ,  Panasonic Liquid Crystal Display Co., Ltd.

Inventor： Hideo TANABE ,  Masaru TAKABATAKE ,  Toshiki KANEKO ,  Atsushi HASEGAWA ,  Hiroko SEHATA

IPC: G02F1/1333 ,  H01L29/786 ,  H01L27/12 ,  G02F1/1362 ,  G02F1/1368 ,  G02F1/1335 ,  G02F1/1343

CPC classification number: G02F1/133345 ,  G02F1/133305 ,  G02F1/133504 ,  G02F1/133555 ,  G02F1/134363 ,  G02F1/136213 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2001/13685 ,  H01L27/124 ,  H01L27/1248 ,  H01L29/78675

Abstract: A LCD device having a large pixel holding capacitance includes opposedly facing first and second substrates, and liquid crystal between them. The first substrate includes a video signal line, a pixel electrode, a thin film transistor having a first electrode connected to the video signal line and a second electrode connected to the pixel electrode, a first silicon nitride film formed above the second electrode, an organic insulation film above the first silicon nitride film, a capacitance electrode above the organic insulation film, and a second silicon nitride film above the capacitance electrode and below the pixel electrode. A contact hole etched in both the first and second silicon nitride films connects the second electrode and the pixel electrode to each other. A holding capacitance is formed by the pixel electrode, the second silicon nitride film and the capacitance electrode.

公开(公告)号：US20170343851A1

公开(公告)日：2017-11-30

申请号：US15680868

申请日：2017-08-18

Applicant: Japan Display Inc. ,  Panasonic Liquid Crystal Display Co., Ltd.

Inventor： Hideo TANABE ,  Masaru TAKABATAKE ,  Toshiki KANEKO ,  Atsushi HASEGAWA ,  Hiroko SEHATA

IPC: G02F1/1333 ,  H01L27/12 ,  G02F1/1368 ,  H01L29/786 ,  G02F1/1362 ,  G02F1/1343 ,  G02F1/1335

CPC classification number: G02F1/133345 ,  G02F1/133305 ,  G02F1/133504 ,  G02F1/133555 ,  G02F1/134363 ,  G02F1/136213 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2001/13685 ,  H01L27/124 ,  H01L27/1248 ,  H01L29/78675

Abstract: A LCD device having a large pixel holding capacitance includes opposedly facing first and second substrates, and liquid crystal between them. The first substrate includes a video signal line, a pixel electrode, a thin film transistor having a first electrode connected to the video signal line and a second electrode connected to the pixel electrode, a first silicon nitride film formed above the second electrode, an organic insulation film above the first silicon nitride film, a capacitance electrode above the organic insulation film, and a second silicon nitride film above the capacitance electrode and below the pixel electrode. A contact hole etched in both the first and second silicon nitride films connects the second electrode and the pixel electrode to each other. A holding capacitance is formed by the pixel electrode, the second silicon nitride film and the capacitance electrode.

公开(公告)号：US20140184990A1

公开(公告)日：2014-07-03

申请号：US14199733

申请日：2014-03-06

Applicant: Japan Display Inc.

Inventor： Daisuke SONODA ,  Toshiki KANEKO ,  Hideo TANABE

IPC: G02F1/1362

CPC classification number: G02F1/136286 ,  G02F2001/136295

Abstract: The present invention provides a liquid crystal display device having gate wires and source/drain wires with a multilayer structure made of the same material which can be manufactured at low cost, as well as a manufacturing method for the same. In accordance with the manufacturing method, a wet etching process is carried out on the gate wires and the source/drain wires using an etchant including hydrofluoric acid and an oxidant, and the concentration of hydrofluoric acid in the etchant is different between the etchant for the gate wires and that for the source/drain wires.

Abstract translation: 本发明提供一种液晶显示装置及其制造方法，该液晶显示装置具有栅极线和源极/漏极导线，该导线和源极/漏极导线具有由低成本制造的相同材料制成的多层结构。 根据制造方法，使用包括氢氟酸和氧化剂在内的蚀刻剂对栅极线和源极/漏极线进行湿蚀刻处理，并且蚀刻剂中的氢氟酸的浓度在 栅极线和源极/漏极线。